1999 article

High-temperature operation of SiC planar ACCUFET

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, Vol. 35, pp. 1458–1462.

By: R. Chilukuri n, P. Shenoy n & B. Baliga n

author keywords: ACCUFET; breakdown voltage; silicon carbide; specific on-resistance
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

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