2001 journal article
In situ cleaning of GaN/6H-SiC substrates in NH3
Journal of Crystal Growth, 222(3), 452–458.
By: A. McGinnis n, D. Thomson, R. Davis, E. Chen, A. Michel & H. Lamb
Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams
Surface Science, 494(1), 28–42.
By: A. McGinnis n, D. Thomson, R. Davis, E. Chen n, A. Michel & H. Lamb
2000 journal article
Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures
MRS Internet Journal of Nitride Semiconductor Research, 5, U520–525.
By: A. Michel, D. Hanser, R. Davis, D. Qiao, S. Lau, L. Yu, W. Sun, P. Asbeck
2000 conference paper
Student use of instructional technology in the introductory chemical engineering course
2000 ASEE Annual Conference Proceedings, ASEE, June 2000.
By: A. Michel, R. Felder, J. Genzer & H. Fuller
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