2018 conference paper
Student use of instructional technology in the introductory chemical engineering course
2000 ASEE Annual Conference Proceedings, ASEE, June 2000.
2001 journal article
In situ cleaning of GaN/6H-SiC substrates in NH3
JOURNAL OF CRYSTAL GROWTH, 222(3), 452–458.
2001 journal article
Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams
SURFACE SCIENCE, 494(1), 28–42.
2000 journal article
Growth and characterization of piezoelectrically enhanced acceptor-type AlGaN/GaN heterostructures
MRS Internet Journal of Nitride Semiconductor Research, 5, U520–525.
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