@article{mantese_xue_sakurai_aspnes_1999, title={Analysis of high-index Si(001) surfaces by reflectance difference spectroscopy}, volume={17}, ISSN={["1520-8559"]}, DOI={10.1116/1.581867}, abstractNote={We report surface-induced optical anisotropy spectra of high-index Si(115), (114), and (113) surfaces obtained using reflectance difference spectroscopy. Air-oxidized surfaces show sharp derivative-type features that are step-induced and located near the critical point energies of bulk Si, consistent with those of lower-index Si(001) surfaces. Clean reconstructed surfaces are characterized by a broad feature near 3 eV that tends to decrease in amplitude upon H exposure and a step-induced structure near the (E0′,E1) transition of bulk Si. In contrast, H exposure of Ge-covered surfaces tends to sharpen and enhance lower-energy structures. The derivative-type features located near the bulk critical point energies of Si can be described in terms of electronic states localized by the finite penetration depth of light.}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Mantese, L and Xue, QK and Sakurai, T and Aspnes, DE}, year={1999}, pages={1652–1656} }
 @article{xue_hasegawa_ogino_kiyama_sakurai_1997, title={In-rich 4X2 reconstruction in novel planar growth of InAs on GaAs(001)}, volume={15}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Xue, Q. K. and Hasegawa, Y. and Ogino, T. and Kiyama, H. and Sakurai, T.}, year={1997}, pages={1270–1273} }