Joon Goo Hong

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

Microelectronics Reliability, 45(06-May), 827–830.

A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys

Surface Science, 566(Sep 20 2004), 772–776.

A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys

Applied Surface Science, 234(37990), 429–433.

Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity

Microelectronic Engineering, 72(04-Jan), 304–309.

Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides

Physica Status Solidi. B, Basic Solid State Physics, 241(10), 2221–2235.

X-ray absorption spectra for transition metal high-kappa dielectrics: Final state differences for intra- and inter-atomic transitions

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(4), 2132–2138.

Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

Solid-State Electronics, 47(1), 71–76.

Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices

Solid-State Electronics, 46(11), 1799–1805.

Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(3), 1126–1131.

Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys

Applied Surface Science, 190(1-4), 43–47.

Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1732–1738.

Total-dose radiation response of hafnium-silicate capacitors

IEEE Transactions on Nuclear Science, 49(6), 3191–3196.

Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)(x)(Al2O3)(1-x) alloys

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 19(4), 1606–1610.

Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys

Microelectronic Engineering, 59(1-4), 385–391.

Imprint and fatigue properties of chemical solution derived Pb1-xLax(ZryTi1-y)(1-x/4)O-3 thin films

Journal of Materials Research, 14(4), 1371–1377.

Thermally induced imprint properties of chemical solution derived PLZT thin films

Integrated Ferroelectrics, 22(1-4), 653–662.