Joon Goo Hong

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

MICROELECTRONICS RELIABILITY, Vol. 45, pp. 827–830.

A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys

Lucovsky, G., Rayner, G. B., Kang, D., Hinkle, C. L., & Hong, J. G. (2004, September 20). SURFACE SCIENCE, Vol. 566, pp. 772–776.

A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys

Lucovsky, G., Rayner, G. B., Kang, D., Hinkle, C. L., & Hong, J. G. (2004, July 15). APPLIED SURFACE SCIENCE, Vol. 234, pp. 429–433.

Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity

Rayner, G. B., Kang, D., Hinkle, C. L., Hong, J. G., & Lucovsky, G. (2004, April). MICROELECTRONIC ENGINEERING, Vol. 72, pp. 304–309.

Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides

Lucovsky, G., Hong, J. G., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., … Freeouf, J. L. (2004, August). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 241, pp. 2221–2235.

X-ray absorption spectra for transition metal high-kappa dielectrics: Final state differences for intra- and inter-atomic transitions

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 22, pp. 2132–2138.

Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

SOLID-STATE ELECTRONICS, 47(1), 71–76.

Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices

Johnson, R. S., Hong, J. G., Hinkle, C., & Lucovsky, G. (2002, November). SOLID-STATE ELECTRONICS, Vol. 46, pp. 1799–1805.

Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(3), 1126–1131.

Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys

Johnson, R. S., Lucovsky, G., & Hong, J. G. (2002, May 8). APPLIED SURFACE SCIENCE, Vol. 190, pp. 43–47.

Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1732–1738.

Total-dose radiation response of hafnium-silicate capacitors

Felix, J. A., Fleetwood, D. M., Schrimpf, R. D., Hong, J. G., Lucovsky, G., Schwank, JR, & Shaneyfelt, M. R. (2002, December). IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 49, pp. 3191–3196.

Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)(x)(Al2O3)(1-x) alloys

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 19(4), 1606–1610.

Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys

Johnson, R. S., Lucovsky, G., & Hong, J. G. (2001, November). MICROELECTRONIC ENGINEERING, Vol. 59, pp. 385–391.

Imprint and fatigue properties of chemical solution derived Pb1-xLax(ZryTi1-y)(1-x/4)O-3 thin films

JOURNAL OF MATERIALS RESEARCH, 14(4), 1371–1377.

Thermally induced imprint properties of chemical solution derived PLZT thin films

Integrated Ferroelectrics, 22(1-4), 653–662.