2005 journal article
Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra
Microelectronics Reliability, 45(06-May), 827–830.
2004 journal article
A spectroscopic phase separation study distinguishing between chemical with different degrees of crystallinity in Zr(Hf) silicate alloys
Surface Science, 566(Sep 20 2004), 772–776.
2004 journal article
A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys
Applied Surface Science, 234(37990), 429–433.
2004 journal article
Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity
Microelectronic Engineering, 72(04-Jan), 304–309.
2004 journal article
Spectroscopic studies of metal high-k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides
Physica Status Solidi. B, Basic Solid State Physics, 241(10), 2221–2235.
2004 journal article
X-ray absorption spectra for transition metal high-kappa dielectrics: Final state differences for intra- and inter-atomic transitions
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 22(4), 2132–2138.
2003 journal article
Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress
Solid-State Electronics, 47(1), 71–76.
2002 journal article
Electron trapping in non-crystalline Ta- and Hf-aluminates for gate dielectric applications in aggressively scaled silicon devices
Solid-State Electronics, 46(11), 1799–1805.
2002 journal article
Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(3), 1126–1131.
2002 journal article
Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys
Applied Surface Science, 190(1-4), 43–47.
2002 journal article
Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1732–1738.
2002 journal article
Total-dose radiation response of hafnium-silicate capacitors
IEEE Transactions on Nuclear Science, 49(6), 3191–3196.
2001 journal article
Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)(x)(Al2O3)(1-x) alloys
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 19(4), 1606–1610.
2001 journal article
Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3-Ta2O5 alloys
Microelectronic Engineering, 59(1-4), 385–391.
1999 journal article
Imprint and fatigue properties of chemical solution derived Pb1-xLax(ZryTi1-y)(1-x/4)O-3 thin films
Journal of Materials Research, 14(4), 1371–1377.
1998 journal article
Thermally induced imprint properties of chemical solution derived PLZT thin films
Integrated Ferroelectrics, 22(1-4), 653–662.