Joon Goo Hong

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

Lucovsky, G., Hong, J. G., Fulton, C. C., Stoute, N. A., Zou, Y., Nemanich, R. J., … Schlom, D. G. (2005, February 17). Microelectronics Reliability, Vol. 45, pp. 827–830.

A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys

Lucovsky, G., Rayner, G. B., Kang, D., Hinkle, C. L., & Hong, J. G. (2004, July 1). Applied Surface Science.

A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Zr(Hf) silicate alloys

Lucovsky, G., Rayner, G. B., Kang, D., Hinkle, C. L., & Hong, J. G. (2004, June 17). Surface Science.

Chemical phase separation in Zr silicate alloys: a spectroscopic study distinguishing between chemical phase separation with different degree of micro- and nano-crystallinity

Rayner, G. B., Kang, D., Hinkle, C. L., Hong, J. G., & Lucovsky, G. (2004, January 23). Microelectronic Engineering.

Spectroscopic studies of metal high‐k dielectrics: transition metal oxides and silicates, and complex rare earth/transition metal oxides

Lucovsky, G., Hong, J. G., Fulton, C. C., Zou, Y., Nemanich, R. J., Ade, H., … Freeouf, J. L. (2004, July 23). Physica Status Solidi (b), Vol. 241, pp. 2221–2235.

X-ray absorption spectra for transition metal high-κ dielectrics: Final state differences for intra- and inter-atomic transitions

Lucovsky, G., Hong, J. G., Fulton, C. C., Zou, Y., Nemanich, R. J., & Ade, H. (2004, July 1). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena, Vol. 22, pp. 2132–2138.

Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

Lee, Y.-M., Wu, Y., Bae, C., Hong, J. G., & Lucovsky, G. (2003, January 1). Solid-State Electronics.

Electron trapping in non-crystalline Ta- and Hf-Aluminates for gate dielectric applications in aggressively scaled silicon devices

Johnson, R. S., Hong, J. G., Hinkle, C., & Lucovsky, G. (2002, October 21). Solid-State Electronics.

Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(3), 1126–1131.

Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3–Ta2O5 alloys

Johnson, R. S., Lucovsky, G., & Hong, J. G. (2002, May 1). Applied Surface Science.

Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(4), 1732–1738.

Total-dose radiation response of hafnium-silicate capacitors

Felix, J. A., Fleetwood, D. M., Schrimpf, R. D., Hong, J. G., Lucovsky, G., Schwank, J. R., & Shaneyfelt, M. R. (2002, December 1). IEEE Transactions on Nuclear Science.

Electron traps at interfaces between Si(100) and noncrystalline Al2O3, Ta2O5, and (Ta2O5)(x)(Al2O3)(1-x) alloys

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 19(4), 1606–1610.

Fixed charge and interface traps at heterovalent interfaces between Si(100) and non-crystalline Al2O3–Ta2O5 alloys

Johnson, R. S., Lucovsky, G., & Hong, J. G. (2001, November 1). Microelectronic Engineering.

Imprint and Fatigue Properties of Chemical Solution Derived Pb_1–-xLa_x(Zr_yTi_1–y)_1–x/4O₃ Thin Films

Kim, S.-H., Kim, D.-J., Hong, J. G., Streiffer, S. K., & Kingon, A. I. (1999, April 1). Journal of Materials Research/Pratt's Guide to Venture Capital Sources.

Thermally induced imprint properties of chemical solution derived PLZT thin films

Integrated Ferroelectrics, 22(1-4), 653–662.