@article{suvkhanov_parikh_usov_hunn_withrow_thomson_gehrke_davis_krasnobaev_2000, title={Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN}, volume={338}, number={3}, journal={Materials Science Forum}, author={Suvkhanov, A. and Parikh, N. and Usov, I. and Hunn, J. and Withrow, S. and Thomson, D. and Gehrke, T. and Davis, R. F. and Krasnobaev, L. Y.}, year={2000}, pages={1615–1618} }
 @article{joshkin_parker_bedair_krasnobaev_cuomo_davis_suvkhanov_1998, title={Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC}, volume={72}, ISSN={["0003-6951"]}, DOI={10.1063/1.121474}, abstractNote={The effect of He ion implantation on the optical properties of epitaxial GaN-on-SiC was studied. We observed that He+ irradiation increases the relative intensity of the “blue emission” and resistivity of GaN films and decreases the intensity of the near-band-edge photoluminescence. Because the intensity of the main peak is drastically decreased, the fine structure of the near-band-edge photoluminescence in GaN after He+ irradiation was observed. From a comparison of observed sharp lines with photoluminescence peaks of GaN doped with oxygen, we conclude that oxygen can produce a complex, which is characterized by a strong localization of free carriers and a large lattice distortion. The zero-phonon line of this defect has energy close to the band-gap energy of GaN.}, number={22}, journal={APPLIED PHYSICS LETTERS}, author={Joshkin, VA and Parker, CA and Bedair, SM and Krasnobaev, LY and Cuomo, JJ and Davis, RF and Suvkhanov, A}, year={1998}, month={Jun}, pages={2838–2840} }
 @article{krasnobaev_cuomo_vyletalina_1997, title={Harnessing reverse annealing phenomenon for shallow p-n junction formation}, volume={82}, ISSN={["0021-8979"]}, DOI={10.1063/1.366323}, abstractNote={Monocrystalline silicon was implanted with 60 keV fluorine and 20 keV boron ions and annealed. Carrier profile, fluorine and boron redistribution, and the parameters of p+-n junctions were investigated. In ion implanted Si two specific regions were observed in which peculiarities in carrier concentration, resistivity, and F atoms redistribution occurred. It was reasoned that the “under-surface” specific region is enriched with vacancy-type defects while the “amorphous/crystalline (a/c) interface” region is enriched with interstitial type defects. After annealing at a temperature corresponding to the reverse annealing phenomenon, boron atoms were activated in the “under-surface” and deactivated in the “a/c interface” region. The possibility of PMOS transistor fabrication with ultrashallow p+-n junction (60 nm) and low leakage current by F++B+ implantation and low temperature (600–700) °C annealing by using this phenomenon was demonstrated.}, number={10}, journal={JOURNAL OF APPLIED PHYSICS}, author={Krasnobaev, LY and Cuomo, JJ and Vyletalina, OI}, year={1997}, month={Nov}, pages={5185–5190} }