@article{suvkhanov_parikh_usov_hunn_withrow_thomson_gehrke_davis_krasnobaev_2000, title={Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN}, volume={338}, number={3}, journal={Materials Science Forum}, author={Suvkhanov, A. and Parikh, N. and Usov, I. and Hunn, J. and Withrow, S. and Thomson, D. and Gehrke, T. and Davis, R. F. and Krasnobaev, L. Y.}, year={2000}, pages={1615–1618} }
 @article{joshkin_parker_bedair_krasnobaev_cuomo_davis_suvkhanov_1998, title={Fine structure of near-band-edge photoluminescence in He+- irradiated GaN grown on SiC}, volume={72}, DOI={10.1063/1.121474}, number={22}, journal={Applied Physics Letters}, author={Joshkin, V. A. and Parker, C. A. and Bedair, S. M. and Krasnobaev, L. Y. and Cuomo, J. J. and Davis, R. F. and Suvkhanov, A.}, year={1998}, pages={2838–2840} }
 @article{krasnobaev_cuomo_vyletalina_1997, title={Harnessing reverse annealing phenomenon for shallow p-n junction formation}, volume={82}, DOI={10.1063/1.366323}, number={10}, journal={Journal of Applied Physics}, author={Krasnobaev, L. Y. and Cuomo, Jerome J. and Vyletalina, O. I.}, year={1997}, pages={5185–5190} }