Leonid Y. Krasnobaev

Suvkhanov, A., Parikh, N., Usov, I., Hunn, J., Withrow, S., Thomson, D., … Krasnobaev, L. Y. (2000). Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN. Materials Science Forum, 338(3), 1615–1618.

Joshkin, V. A., Parker, C. A., Bedair, S. M., Krasnobaev, L. Y., Cuomo, J. J., Davis, R. F., & Suvkhanov, A. (1998). Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC. APPLIED PHYSICS LETTERS, 72(22), 2838–2840. https://doi.org/10.1063/1.121474

Krasnobaev, L. Y., Cuomo, J. J., & Vyletalina, O. I. (1997). Harnessing reverse annealing phenomenon for shallow p-n junction formation. JOURNAL OF APPLIED PHYSICS, 82(10), 5185–5190. https://doi.org/10.1063/1.366323