1999 journal article

Temperature dependence of hole impact ionization coefficientsin 4H and 6H-SiC

Solid-State Electronics, 43(2), 199–211.

By: R. Raghunathan & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

P-type 4H and 6H-SiC high-voltage Schottky barrier diodes

IEEE Electron Device Letters, 19(3), 71–73.

By: R. Raghunathan & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Role of defects in producing negative temperature dependence of breakdown voltage in SiC

Applied Physics Letters, 72(24), 3196–3198.

By: R. Raghunathan & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018