Works (3)
Updated: July 5th, 2023 16:03
1999 journal article
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
SOLID-STATE ELECTRONICS, 43(2), 199–211.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1998 journal article
P-type 4H and 6H-SiC high-voltage Schottky barrier diodes
IEEE ELECTRON DEVICE LETTERS, 19(3), 71–73.
author keywords: breakdown; electric field; silicon carbide; Schottky rectifiers
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Role of defects in producing negative temperature dependence of breakdown voltage in SiC
APPLIED PHYSICS LETTERS, 72(24), 3196–3198.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
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