1999 journal article
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
SOLID-STATE ELECTRONICS, 43(2), 199–211.
1998 journal article
P-type 4H and 6H-SiC high-voltage Schottky barrier diodes
IEEE ELECTRON DEVICE LETTERS, 19(3), 71–73.
1998 journal article
Role of defects in producing negative temperature dependence of breakdown voltage in SiC
APPLIED PHYSICS LETTERS, 72(24), 3196–3198.
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