Rohini Raghunathan

Works (3)

Updated: July 5th, 2023 16:03

1999 article

Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC

Raghunathan, R., & Baliga, B. J. (1999, February 1). Solid-State Electronics.

By: R. Raghunathan* & B. Baliga*

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Electromagnetic Compatibility and Noise Suppression; Semiconductor materials and devices
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Source: Web Of Science
Added: August 6, 2018

1998 article

P-type 4H and 6H-SiC high-voltage Schottky barrier diodes

Raghunathan, R., & Baliga, B. J. (1998, March 1). IEEE Electron Device Letters.

By: R. Raghunathan n & B. Baliga n

author keywords: breakdown; electric field; silicon carbide; Schottky rectifiers
topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Semiconductor materials and interfaces; Semiconductor materials and devices
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Source: Web Of Science
Added: August 6, 2018

1998 article

Role of defects in producing negative temperature dependence of breakdown voltage in SiC

Raghunathan, R., & Baliga, B. J. (1998, June 15). Applied Physics Letters.

By: R. Raghunathan n & B. Baliga n

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Semiconductor materials and devices; Integrated Circuits and Semiconductor Failure Analysis
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Source: Web Of Science
Added: August 6, 2018

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