Rohini Raghunathan

Works (3)

Updated: July 5th, 2023 16:03

1999 journal article

Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC

SOLID-STATE ELECTRONICS, 43(2), 199–211.

By: R. Raghunathan* & B. Baliga*

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Source: Web Of Science
Added: August 6, 2018

1998 journal article

P-type 4H and 6H-SiC high-voltage Schottky barrier diodes

IEEE ELECTRON DEVICE LETTERS, 19(3), 71–73.

By: R. Raghunathan n & B. Baliga n

author keywords: breakdown; electric field; silicon carbide; Schottky rectifiers
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Source: Web Of Science
Added: August 6, 2018

1998 journal article

Role of defects in producing negative temperature dependence of breakdown voltage in SiC

APPLIED PHYSICS LETTERS, 72(24), 3196–3198.

By: R. Raghunathan n & B. Baliga n

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Source: Web Of Science
Added: August 6, 2018

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