1999 journal article

Modeling the [dV/dt] of the IGBT during inductive turn off

IEEE TRANSACTIONS ON POWER ELECTRONICS, 14(4), 601–606.

By: A. Ramamurthy*, S. Sawant* & B. Baliga*

author keywords: insulated gate bipolar transistors; power semiconductor devices; semiconductor device modeling; semiconductor switches
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

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