@article{min_lamb_hauser_2001, title={Time-dependent Si etch behavior and its effect on oxide/Si selectivity in CF4+D-2 electron cyclotron resonance plasma etching}, volume={19}, ISSN={["1071-1023"]}, DOI={10.1116/1.1371318}, abstractNote={Transient poly-Si etching behavior in CF4+D2 electron cyclotron resonance plasmas containing different D2 proportions was investigated. Higher D2 proportions resulted in lower atomic F and higher CF2 concentration in the plasma, as evidenced by optical emission spectroscopy (OES), and in greater oxide-to-Si etch selectivity. A high initial poly-Si etch rate that declined very rapidly to a finite-steady-state value was observed for plasma etching under conditions giving low (3:1) oxide-to-Si etch selectivity. In contrast, a lower initial etch rate that declined to approximately zero over a longer (∼45 s) period was observed for poly-Si etching under plasma conditions giving (∼15:1) selectivity. In the latter case, Si consumption during overetching would be significantly underestimated if calculated on the basis of the conventional 60 s selectivity ration. X-ray photoelectron spectroscopy analysis indicated that a thick, more F-deficient fluorocarbon film was deposited on Si under the high-selectivity etching conditions. Real-time SiF4 and atomic F signals, which were measured during SiO2 etching using OES and mass spectroscopy, respectively, evidenced significantly different end-point trends for the high- and low-selectivity etching conditions. These trends are interpreted in light of the transient etching behavior observed for poly-Si under equivalent plasma conditions.}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Min, K and Lamb, HH and Hauser, JR}, year={2001}, pages={695–700} }
 @article{chambers_min_parsons_1998, title={Endpoint uniformity sensing and analysis in silicon dioxide plasma etching using in situ mass spectrometry}, volume={16}, ISSN={["1071-1023"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000077542300014&KeyUID=WOS:000077542300014}, DOI={10.1116/1.590332}, abstractNote={Mass spectroscopy is used to characterize the endpoint uniformity of silicon dioxide etching in an electron cyclotron resonance (ECR) plasma etch process. Etch products are observed using a two stage differentially pumped mass spectrometry system attached to the ECR process chamber. Specifically, using CF4 and D2 etch gases, the partial pressure of CO-containing etch products decays near the endpoint, and the rate of signal decay is directly correlated with the uniformity determined from optical interferometry thickness measurements. To correlate the mass spectrometer signal with the etch rate variation across the wafer, etch uniformity is altered by changing the ECR electromagnet geometry and by modifying the initial oxide uniformity. A COF2 etch product material balance is developed to model the observed concentration versus time data, resulting in a quantitative correlation between change in endpoint slope and uniformity. The ability to utilize a process-state sensor, such as a mass spectrometer, for wafer-state information will result in new approaches for sensing, optimizing, and controlling integrated circuit fabrication processes.}, number={6}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Chambers, JJ and Min, K and Parsons, GN}, year={1998}, pages={2996–3002} }
 @article{yao_min_1998, title={Repair-unit location models for power failures}, volume={45}, ISSN={["0018-9391"]}, DOI={10.1109/17.658661}, abstractNote={Extreme weather conditions such as ice storms often cause significant damage to electric power transmission and distribution systems and result in large-scale power failures. In such cases, electric utilities need to repair the transmission and distribution systems as expeditiously and economically as possible. In this paper, for the electric utilities, the authors present three mathematical goal programming models: (1) a tactical model that provides the optimal repair-unit dispatch plan after a forecast of severe weather conditions; (2) a short-term strategic model that provides the optimal repair-unit location plan under normal weather conditions; and (3) a long-term strategic model that provides the optimal number of repair units. These models will assist electric utilities to locate and dispatch repair units and to restore the transmission and distribution failures efficiently. The authors illustrate some features of these models with a numerical example. Finally, a comparative study shows how these models could be more efficient than a modified conventional model.}, number={1}, journal={IEEE TRANSACTIONS ON ENGINEERING MANAGEMENT}, author={Yao, MJ and Min, KJ}, year={1998}, month={Feb}, pages={57–65} }