Khaled Zakaria Ahmed

Ahmed, K., Wortman, J. J., & Hauser, JR. (2000). A two-dimensional numerical simulation of pulsed drain current transients in weak inversion and application to interface trap characterization on small geometry MOSFETs with ultrathin oxides. IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(11), 2236–2237. https://doi.org/10.1109/16.877189

Ahmed, K., Ibok, E., & Hauser, J. (2000). Analytic model of parasitic capacitance attenuation in CMOS devices with hyper-thin oxides. ELECTRONICS LETTERS, 36(20), 1699–1700. https://doi.org/10.1049/el:20001160

Ahmed, K., Ibok, E., Bains, G., Chi, D., Ogle, B., Wortman, J. J., & Hauser, JR. (2000). Comparative physical and electrical metrology of ultrathin oxides in the 6 to 1.5 nm regime. IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1349–1354. https://doi.org/10.1109/16.848276

Ahmed, K., De, I., Osburn, C., Wortman, J., & Hauser, J. (2000). Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of L-eff and R-sd of LDD MOSFET's. IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(4), 891–895. https://doi.org/10.1109/16.831010

Henson, W. K., Ahmed, K. Z., Vogel, E. M., Hauser, JR, Wortman, J. J., Venables, R. D., … Venables, D. (1999). Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors. IEEE ELECTRON DEVICE LETTERS, 20(4), 179–181. https://doi.org/10.1109/55.753759

Ahmed, K., Ibok, E., Yeap, G. C. F., Xiang, Q., Ogle, B., Wortman, J. J., & Hauser, JR. (1999). Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-angstrom gate oxide MOSFET's. IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(8), 1650–1655. https://doi.org/10.1109/16.777153

Vogel, E. M., Ahmed, K. Z., Hornung, B., Henson, W. K., McLarty, P. K., Lucovsky, G., … Wortman, J. J. (1998). Modeled tunnel currents for high dielectric constant dielectrics. IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(6), 1350–1355. https://doi.org/10.1109/16.678572