Dimitri Arthur Alexson

Phonons in III–V nitrides: Confined phonons and interface phonons

Physica E: Low-Dimensional Systems and Nanostructures, 11(2-3), 277–280.

Selective bond breaking in amorphous hydrogenated silicon by using Duke FEL

Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors, and Associated Equipment, 475(1-3), 635–639.

Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys

Journal of Applied Physics, 89(1), 798–800.

Confined phonons and phonon-mode properties of III–V nitrides with wurtzite crystal structure

Physica B: Condensed Matter, 263-264(1999 Mar.), 510–513.

Phonon dynamics and lifetimes of AlN and GaN crystallites

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G6.65).

Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure

Physical Review. B, Condensed Matter and Materials Physics, 59(20), 12977–12982.

Raman analysis of the E1 and A1 quasi-longitudinal optical and quasi-transverse optical modes in wurtzite AlN

Journal of Applied Physics, 85(7), 3535–3539.