Andrew David Banks

Works (6)

Updated: July 5th, 2023 16:03
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2003 journal article

Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(1), 294–301.

By: A. McGinnis n, D. Thomson n, A. Banks n, E. Preble n, R. Davis n & H. Lamb n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Growth and microstructure of InxGa1-xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 3(3), 163–171.

By: A. Hanser n, A. Banks n, R. Davis n, B. Jahnen*, M. Albrecht *, W. Dorsch*, S. Christiansen *, H. Strunk*

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
author keywords: microstructure; Burgers vector; MOVPE
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 18(3), 879–881.

By: S. Smith*, W. Lampert*, P. Rajagopal n, A. Banks n, D. Thomson n & R. Davis n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1998 article

Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H)-SiC substrates

Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., … Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 238–245.

By: A. Hanser n, C. Wolden*, W. Perry n, T. Zheleva n, E. Carlson n, A. Banks n, R. Therrien n, R. Davis n

co-author countries: United States of America 🇺🇸
author keywords: AlN; diluent; doping; GaN; metalorganic vapor phase epitaxy (MOVPE); photoluminescence (PL); reactor modeling
Source: Web Of Science
Added: August 6, 2018

1998 personal communication

Growth of Fe3N films via chemical vapor deposition of iron acetylacetonate and anhydrous ammonia

By: S. Roberson, D. Finello, A. Banks & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Structural and electronic properties of boron nitride thin films containing silicon

JOURNAL OF APPLIED PHYSICS, 84(9), 5046–5051.

By: C. Ronning n, A. Banks n, B. McCarson n, R. Schlesser n, Z. Sitar n, R. Davis n, B. Ward n, R. Nemanich n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018