Works (6)

Updated: July 5th, 2023 16:03

2003 journal article

Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(1), 294–301.

By: A. McGinnis n, D. Thomson n, A. Banks n, E. Preble n, R. Davis n & H. Lamb n

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Growth and microstructure of InxGa1-xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 3(3), 163–171.

By: A. Hanser n, A. Banks n, R. Davis n, B. Jahnen*, M. Albrecht*, W. Dorsch*, S. Christiansen*, H. Strunk*

author keywords: microstructure; Burgers vector; MOVPE
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 18(3), 879–881.

By: S. Smith*, W. Lampert*, P. Rajagopal n, A. Banks n, D. Thomson n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1998 article

Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H)-SiC substrates

Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., … Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 238–245.

By: A. Hanser n, C. Wolden*, W. Perry n, T. Zheleva n, E. Carlson n, A. Banks n, R. Therrien n, R. Davis n

author keywords: AlN; diluent; doping; GaN; metalorganic vapor phase epitaxy (MOVPE); photoluminescence (PL); reactor modeling
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 personal communication

Growth of Fe3N films via chemical vapor deposition of iron acetylacetonate and anhydrous ammonia

By: S. Roberson, D. Finello, A. Banks & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Structural and electronic properties of boron nitride thin films containing silicon

JOURNAL OF APPLIED PHYSICS, 84(9), 5046–5051.

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

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