Works (6)
2002 article
Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia
McGinnis, A. J., Thomson, D., Banks, A., Preble, E., Davis, R. F., & Lamb, H. H. (2002, December 20). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.
2000 article
Growth and microstructure of InxGa1−xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy
Hanser, A. D., Banks, A. D., Davis, R. F., Jahnen, B., Albrecht, M., Dorsch, W., … Strunk, H. P. (2000, June 1). Materials Science in Semiconductor Processing.
2000 article
Selective etching of GaN over AlN using an inductively coupled plasma and an O2/Cl2/Ar chemistry
Smith, S. A., Lampert, W. V., Rajagopal, P., Banks, A. D., Thomson, D., & Davis, R. F. (2000, May 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.
1998 article
Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates
Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., … Davis, R. F. (1998, April 1). Journal of Electronic Materials.
1998 personal communication
Growth of Fe3N films via chemical vapor deposition of iron acetylacetonate and anhydrous ammonia
1998 article
Structural and electronic properties of boron nitride thin films containing silicon
Ronning, C., Banks, A. D., McCarson, B. L., Schlesser, R., Sitar, Z., Davis, R. F., … Nemanich, R. J. (1998, November 1). Journal of Applied Physics.