Works (6)

Updated: February 10th, 2025 16:10

2002 article

Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia

McGinnis, A. J., Thomson, D., Banks, A., Preble, E., Davis, R. F., & Lamb, H. H. (2002, December 20). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

By: A. McGinnis n, D. Thomson n, A. Banks n, E. Preble n, R. Davis n & H. Lamb n

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; ZnO doping and properties
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7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2000 article

Growth and microstructure of InxGa1−xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy

Hanser, A. D., Banks, A. D., Davis, R. F., Jahnen, B., Albrecht, M., Dorsch, W., … Strunk, H. P. (2000, June 1). Materials Science in Semiconductor Processing.

By: A. Hanser n, A. Banks n, R. Davis n, B. Jahnen*, M. Albrecht*, W. Dorsch*, S. Christiansen*, H. Strunk*

author keywords: microstructure; Burgers vector; MOVPE
topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

2000 article

Selective etching of GaN over AlN using an inductively coupled plasma and an O2/Cl2/Ar chemistry

Smith, S. A., Lampert, W. V., Rajagopal, P., Banks, A. D., Thomson, D., & Davis, R. F. (2000, May 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

By: S. Smith*, W. Lampert*, P. Rajagopal n, A. Banks n, D. Thomson n & R. Davis n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Plasma Diagnostics and Applications
Source: Web Of Science
Added: August 6, 2018

1998 article

Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates

Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., … Davis, R. F. (1998, April 1). Journal of Electronic Materials.

By: A. Hanser n, C. Wolden*, W. Perry n, T. Zheleva n, E. Carlson n, A. Banks n, R. Therrien n, R. Davis n

author keywords: AlN; diluent; doping; GaN; metalorganic vapor phase epitaxy (MOVPE); photoluminescence (PL); reactor modeling
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
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6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 personal communication

Growth of Fe3N films via chemical vapor deposition of iron acetylacetonate and anhydrous ammonia

By: S. Roberson, D. Finello, A. Banks & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 article

Structural and electronic properties of boron nitride thin films containing silicon

Ronning, C., Banks, A. D., McCarson, B. L., Schlesser, R., Sitar, Z., Davis, R. F., … Nemanich, R. J. (1998, November 1). Journal of Applied Physics.

topics (OpenAlex): Graphene research and applications; Diamond and Carbon-based Materials Research; Semiconductor materials and devices
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UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

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