2002 journal article
Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(1), 294–301.
2000 journal article
Growth and microstructure of InxGa1-xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 3(3), 163–171.
2000 journal article
Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 18(3), 879–881.
1998 article
Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H)-SiC substrates
Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., … Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 238–245.
1998 personal communication
Growth of Fe3N films via chemical vapor deposition of iron acetylacetonate and anhydrous ammonia
1998 journal article
Structural and electronic properties of boron nitride thin films containing silicon
JOURNAL OF APPLIED PHYSICS, 84(9), 5046–5051.
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