@article{bobde_baliga_2000, title={Silicon planar ACCUFET: improved power MOSFET structure}, volume={36}, ISSN={["0013-5194"]}, DOI={10.1049/el:20000647}, abstractNote={An improved power MOSFET structure in silicon. Called the planar ACCUmulation channel field effect transistor (planar ACCUFET) is proposed. In this device, the P base and the deep P/sup +/ regions of the conventional DMOSFET are replaced by a depleted N-type base region created using a buried P/sup +/ region. Numerical simulations show that the planar ACCUFET has good forward blocking characteristics with low leakage current. The specific on-resistance, as well as the gate charge of the planar ACCUFET are lower than those of a DMOSFET with the same voltage rating. Furthermore, the planar ACCUFET requires a smaller thermal budget for fabrication than the DMOSFET.}, number={10}, journal={ELECTRONICS LETTERS}, author={Bobde, MD and Baliga, BJ}, year={2000}, month={May}, pages={913–915} }