Works (26)

2008 patent

Method for controlling defects in gate dielectrics

Washington, DC: U.S. Patent and Trademark Office.

By: L. Colombo, J. Chambers, M. Visokay & A. Rotondo

Source: NC State University Libraries
Added: August 6, 2018

2008 patent

Refractory metal-based electrodes for work function setting in semiconductor devices

Washington, DC: U.S. Patent and Trademark Office.

By: L. Colombo, J. Chambers & M. Visokay

Source: NC State University Libraries
Added: August 6, 2018

2007 patent

Methods and systems to mitigate etch stop clipping for shallow trench isolation fabrication

Washington, DC: U.S. Patent and Trademark Office.

By: M. Quevedo-Lopez, J. Chambers & L. Olsen

Source: NC State University Libraries
Added: August 6, 2018

2007 patent

Process for manufacturing dual work function metal gates in a microelectronics device

Washington, DC: U.S. Patent and Trademark Office.

By: L. Colombo, J. Chambers & M. Visokay

Source: NC State University Libraries
Added: August 6, 2018

2007 patent

Reliable high voltage gate dielectric layers using a dual nitridation process

Washington, DC: U.S. Patent and Trademark Office.

By: R. Khamankar, D. Grider, H. Niimi, A. Gurba, T. Tran & J. Chambers

Source: NC State University Libraries
Added: August 6, 2018

2006 patent

High-K gate dielectric defect gettering using dopants

Washington, DC: U.S. Patent and Trademark Office.

By: L. Colombo, J. Chambers & A. Rotondaro

Source: NC State University Libraries
Added: August 6, 2018

2006 patent

Hydrogen free integration of high-k gate dielectrics

Washington, DC: U.S. Patent and Trademark Office.

By: L. Colombo, J. Chambers & M. Visokay

Source: NC State University Libraries
Added: August 6, 2018

2006 patent

Method for fabricating transistor gate structures and gate dielectrics thereof

Washington, DC: U.S. Patent and Trademark Office.

By: M. Visokay, L. Colombo, J. Chambers, A. Rotondaro & H. Bu

Source: NC State University Libraries
Added: August 6, 2018

2006 patent

Refractory metal-based electrodes for work function setting in semiconductor devices

Washington, DC: U.S. Patent and Trademark Office.

By: A. Rotondaro, J. Chambers & A. Jain

Source: NC State University Libraries
Added: August 6, 2018

2006 patent

Structure and method to fabricate self-aligned transistors with dual work function metal gate electrodes

Washington, DC: U.S. Patent and Trademark Office.

By: J. Chambers

Source: NC State University Libraries
Added: August 6, 2018

2006 patent

Top surface roughness reduction of high-k dielectric materials using plasma based processes

Washington, DC: U.S. Patent and Trademark Office.

By: M. Quevedo-Lopez, J. Chambers, L. Colombo & M. Visokay

Source: NC State University Libraries
Added: August 6, 2018

2006 patent

Use of indium to define work function of p-type doped polysilicon

Washington, DC: U.S. Patent and Trademark Office.

By: L. Colombo, J. Chambers & A. Rotondaro

Source: NC State University Libraries
Added: August 6, 2018

2006 patent

Versatile system for triple-gated transistors with engineered corners

Washington, DC: U.S. Patent and Trademark Office.

By: M. Visokay & J. Chambers

Source: NC State University Libraries
Added: August 6, 2018

2005 patent

High temperature interface layer growth for high-k gate dielectric

Washington, DC: U.S. Patent and Trademark Office.

By: L. Colombo, J. Chambers, A. Rotondaro & M. Visokay

Source: NC State University Libraries
Added: August 6, 2018

2005 patent

Metal gate MOS transistors and methods for making the same

Washington, DC: U.S. Patent and Trademark Office.

By: M. Visokay, L. Colombo & J. Chambers

Source: NC State University Libraries
Added: August 6, 2018

2005 patent

Method for fabricating split gate transistor device having high-k dielectrics

Washington, DC: U.S. Patent and Trademark Office.

By: A. Rotondaro, M. Visokay, J. Chambers & L. Colombo

Source: NC State University Libraries
Added: August 6, 2018

2005 patent

Versatile system for triple-gated transistors with engineered corners

Washington, DC: U.S. Patent and Trademark Office.

By: M. Visokay & J. Chambers

Source: NC State University Libraries
Added: August 6, 2018

2004 patent

High-k gate dielectric with uniform nitrogen profile and methods for making the same

Washington, DC: U.S. Patent and Trademark Office.

By: L. Colombo, M. Quevedo-Lopez, J. Chambers, M. Visokay & A. Rotondaro

Source: NC State University Libraries
Added: August 6, 2018

2004 patent

Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures

Washington, DC: U.S. Patent and Trademark Office.

By: H. Niimi, R. Khamankar, J. Chambers, S. Hattangady & A. Rotondaro

Source: NC State University Libraries
Added: August 6, 2018

2004 patent

Use of indium to define work function of p-type doped polysilicon

Washington, DC: U.S. Patent and Trademark Office.

By: A. Rotondaro, J. Chambers & A. Jain

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

High dielectric constant metal silicates formed by controlled metal-surface reactions

Washington, DC: U.S. Patent and Trademark Office.

By: G. Parsons, J. Chambers & M. Kelly

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Temperature spike for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates

Washington, DC: U.S. Patent and Trademark Office.

By: H. Niimi, J. Chambers, R. Khamankar & D. Grider

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon

Applied Surface Science, 181(1-2), 78–93.

By: J. Chambers, B. Busch, W. Schulte, T. Gustafsson, E. Garfunkel, S. Wang, D. Maher, T. Klein, G. Parsons

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Physical and electrical characterization of ultrathin yttrium silicate insulators on silicon

Journal of Applied Physics, 90(2), 918–933.

By: J. Chambers & G. Parsons

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Yttrium silicate formation on silicon: Effect of silicon preoxidation and nitridation on interface reaction kinetics

Applied Physics Letters, 77(15), 2385–2387.

By: J. Chambers & G. Parsons

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Endpoint uniformity sensing and analysis in silicon dioxide plasma etching using in situ mass spectrometry

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(6), 2996–3002.

By: J. Chambers, K. Min & G. Parsons

Source: NC State University Libraries
Added: August 6, 2018