Robert Thomas Croswell

Dunn, G. J., Chelini, R. J., Croswell, R. T., Lessner, P. M., Prevallet, M. D., & Prymak, J. D. (2008). Embedded capacitors and methods for their fabrication and connection. Washington, DC: U.S. Patent and Trademark Office.

Kim, T., Kingon, A. I., Maria, J.-P., & Croswell, R. T. (2007). Lead zirconate titanate thin film capacitors on electroless nickel coated copper foils for embedded passive applications. THIN SOLID FILMS, 515(18), 7331–7336. https://doi.org/10.1016/j.tsf.2007.02.085

Dunn, G. J., Chilini, R. J., Croswell, R. T., Dean, T. B., Gamboa, C. V., & Savic, J. (2007). Printed circuit dielectric foil and embedded capacitors. Washington, DC: U.S. Patent and Trademark Office.

Croswell, R. T., Dunn, G. J., Lempkowski, R. B., Tungare, A. V., & Savic, J. (2006). Printed circuit embedded capacitors. Washington, DC: U.S. Patent and Trademark Office.

Dunn, G. J., Croswell, R. T., Magera, J. A., Savic, J., & Tungare, A. V. (2006). Printed circuit patterned embedded capacitance layer. Washington, DC: U.S. Patent and Trademark Office.

Lian, K. K., Croswell, R. T., Tungare, A., & Eliacin, M. (2005). Organic semiconductor device and method. Washington, DC: U.S. Patent and Trademark Office.

Kim, T., Kingon, A. I., Maria, J. P., & Croswell, R. T. (2004). Ca-doped lead zirconate titanate thin film capacitors on base metal nickel on copper foil. JOURNAL OF MATERIALS RESEARCH, 19(10), 2841–2848. https://doi.org/10.1557/jmr.2004.0387

Croswell, R., & Dunn, G. (2003). Integration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates. Washington, DC: U.S. Patent and Trademark Office.

Croswell, R. T., Reisman, A., Simpson, D. L., Temple, D., & Williams, C. K. (2001). Methods of raising reflow temperature of glass alloys by thermal treatment in steam, and microelectronic structures formed thereby. Washington, DC: U.S. Patent and Trademark Office.

Simpson, D. L., Croswell, R. T., Reisman, A., Williams, C. K., & Temple, D. (2000). Deposition and characterization of undoped and boron and phosphorus doped (SixGe1-xO2) glass films. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(4), 1560–1567. https://doi.org/10.1149/1.1393394

Wang, Z. G., Parker, C. G., Hodge, D. W., Croswell, R. T., Yang, N., Misra, V., & Hauser, JR. (2000). Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks. IEEE ELECTRON DEVICE LETTERS, 21(4), 170–172. https://doi.org/10.1109/55.830971

Croswell, R. T., Reisman, A., Simpson, D. L., Temple, D., & Williams, C. K. (2000). Planarization processes and applications III. As-deposited and annealed film properties. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(4), 1513–1524. https://doi.org/10.1149/1.1393387

Croswell, R. T., Reisman, A., Simpson, D. L., Temple, D., & Williams, C. K. (1999). Differential thermal analysis of glass mixtures containing SiO2, GeO2, B2O3, and P2O5. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(12), 4569–4579. https://doi.org/10.1149/1.1392676

Simpson, D. L., Croswell, R. T., Reisman, A., Temple, D., & Williams, C. K. (1999). Planarization processes and applications - I. Undoped GeO2-SiO2 glasses. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3860–3871. https://doi.org/10.1149/1.1392565

Simpson, D. L., Croswell, R. T., Reisman, A., Temple, D., & Williams, C. K. (1999). Planarization processes and applications - II. B2O3/P2O5 doped GeO2-SiO2 classes. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3872–3885. https://doi.org/10.1149/1.1392566