Works (2)

1998 journal article

Lateral N-channel inversion mode 4H-SiC MOSFET's

IEEE Electron Device Letters, 19(7), 228–230.

By: S. Sridevan & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

1998 patent

Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance

Washington, DC: U.S. Patent and Trademark Office.

By: S. Sridevan, P. McLarty & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018