Works (2)

Updated: July 5th, 2023 16:03

1998 journal article

Lateral N-channel inversion mode 4H-SiC MOSFET's


By: S. Sridevan n & B. Baliga n

co-author countries: United States of America 🇺🇸
author keywords: inversion layer; mobility; MOSFET; silicon carbide
Source: Web Of Science
Added: August 6, 2018

1998 patent

Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance

Washington, DC: U.S. Patent and Trademark Office.

By: S. Sridevan, P. McLarty & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

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