Srikant Sridevan

Works (2)

Updated: February 10th, 2025 14:29

1998 journal article

Lateral N-channel inversion mode 4H-SiC MOSFET's

IEEE ELECTRON DEVICE LETTERS, 19(7), 228–230.

By: S. Sridevan n & B. Baliga n

author keywords: inversion layer; mobility; MOSFET; silicon carbide
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Source: Web Of Science
Added: August 6, 2018

1998 patent

Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance

Washington, DC: U.S. Patent and Trademark Office.

By: S. Sridevan, P. McLarty & B. Baliga

Source: NC State University Libraries
Added: August 6, 2018

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