Works (2)
Updated: July 5th, 2023 16:03
1998 journal article
Lateral N-channel inversion mode 4H-SiC MOSFET's
IEEE ELECTRON DEVICE LETTERS, 19(7), 228–230.
author keywords: inversion layer; mobility; MOSFET; silicon carbide
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
1998 patent
Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance
Washington, DC: U.S. Patent and Trademark Office.
Source: NC State University Libraries
Added: August 6, 2018
Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.
Certain data included herein are derived from the Web of Science© and InCites© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.