@article{sridevan_baliga_1998, title={Lateral N-channel inversion mode 4H-SiC MOSFET's}, volume={19}, ISSN={["0741-3106"]}, DOI={10.1109/55.701425}, abstractNote={Advances in MOS devices on silicon carbide (SiC) have been greatly hampered by the low inversion layer mobilities. In this paper, the electrical characteristics of lateral n-channel MOSFETs fabricated on 4H-SiC are reported for the first time. Inversion layer electron mobilities of 165 cm/sup 2//V/spl middot/s in 4H-SiC MOSFETs were measured at room temperature. These MOSFETs were fabricated using a low temperature deposited oxide, with subsequent oxidation anneal, as the gate dielectric.}, number={7}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Sridevan, S and Baliga, BJ}, year={1998}, month={Jul}, pages={228–230} }
 @misc{sridevan_mclarty_baliga_1998, title={Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance}, volume={5,742,076}, number={1998 Apr. 21}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Sridevan, S. and McLarty, P. K. and Baliga, B. J.}, year={1998}, month={Apr} }