Works (16)
Updated: July 5th, 2023 16:03
2001 article
Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates
Davis, R. F., Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., … Mehregany, M. (2001, October). JOURNAL OF CRYSTAL GROWTH, Vol. 231, pp. 335–341.
author keywords: characterization; defects; dislocations; X-ray diffraction; selective growth; metalorganic chemical vapor deposition metalorganic vapor phase epitaxy; pendeoepitaxy; gallium compounds; nitrides; silicon; semiconducting gallium compounds; scanning electron microscopy; transmission electron microscopy
Source: Web Of Science
Added: August 6, 2018
2001 review
Ion implantation into gallium nitride
[Review of ]. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 351(5), 349–385.
author keywords: ion implantation; gallium nitride; structural properties; optical properties; dopants
Source: Web Of Science
Added: August 6, 2018
2000 journal article
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
JOURNAL OF APPLIED PHYSICS, 87(5), 2149–2157.
Source: Web Of Science
Added: August 6, 2018
2000 journal article
Pendeo-epitaxial growth of gallium nitride on silicon substrates
JOURNAL OF ELECTRONIC MATERIALS, 29(3), 306–310.
author keywords: Pendeo epitaxy; lateral epitaxy; gallium nitride (GaN); silicon substrates; selective growth; coalescence; metalorganic vapor phase epitaxy (MOVPE)
Source: Web Of Science
Added: August 6, 2018
2000 journal article
Photoluminescence characterization of Mg implanted GaN
MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628.
Source: NC State University Libraries
Added: August 6, 2018
1999 journal article
Characterization of Be-implanted GaN annealed at high temperatures
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).
Source: NC State University Libraries
Added: August 6, 2018
1999 journal article
Room temperature growth of cubic boron nitride
APPLIED PHYSICS LETTERS, 74(11), 1552–1554.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1999 journal article
Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface
JOURNAL OF ELECTRONIC MATERIALS, 28(12), L34–L37.
author keywords: GaN; SiC; valence band; discontinuity; gallium nitride; silicon carbide; x-ray photoelectron spectroscopy; ultra-violet photoelectron spectroscopy
Source: Web Of Science
Added: August 6, 2018
1999 journal article
Valence band discontinuity, surface reconstruction, and chemistry of (0001), (000(1)over-bar), and (1(1)over-bar-00) 2H-AlN/6H-SiC interfaces
JOURNAL OF APPLIED PHYSICS, 86(8), 4483–4490.
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Carbon nitride deposited using energetic species: A review on XPS studies
Physical Review. B, Condensed Matter and Materials Physics, 58(4), 2207–2215.
Source: NC State University Libraries
Added: August 6, 2018
1998 journal article
Cleaning of AlN and GaN surfaces
JOURNAL OF APPLIED PHYSICS, 84(9), 5248–5260.
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction
JOURNAL OF APPLIED PHYSICS, 84(4), 2086–2090.
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Lattice site location studies of ion implanted Li-8 in GaN
JOURNAL OF APPLIED PHYSICS, 84(6), 3085–3089.
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Optical activation of Be implanted into GaN
APPLIED PHYSICS LETTERS, 73(12), 1622–1624.
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Structural and electronic properties of boron nitride thin films containing silicon
JOURNAL OF APPLIED PHYSICS, 84(9), 5046–5051.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1998 journal article
X-ray photoelectron diffraction from (3X3) and (root 3X root 3)R30 degrees (001)(Si) 6H-SiC surfaces
JOURNAL OF APPLIED PHYSICS, 84(11), 6042–6048.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
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