C. Ronning

Works (16)

Updated: February 10th, 2025 16:10

2001 article

Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates

Davis, R. F., Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., … Mehregany, M. (2001, October 1). Journal of Crystal Growth.

By: R. Davis n, T. Gehrke n, K. Linthicum n, E. Preble n, P. Rajagopal n, C. Ronning*, C. Zorman *, M. Mehregany *

author keywords: characterization; defects; dislocations; X-ray diffraction; selective growth; metalorganic chemical vapor deposition metalorganic vapor phase epitaxy; pendeoepitaxy; gallium compounds; nitrides; silicon; semiconducting gallium compounds; scanning electron microscopy; transmission electron microscopy
topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

2001 article

Ion implantation into gallium nitride

Ronning, C. (2001, September 1). Physics Reports.

By: C. Ronning*

author keywords: ion implantation; gallium nitride; structural properties; optical properties; dopants
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

2000 article

Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery

Ronning, C., Dalmer, M., Uhrmacher, M., Restle, M., Vetter, U., Ziegeler, L., … Collaboration, I. S. O. L. D. E. (2000, March 1). Journal of Applied Physics.

By: C. Ronning*, M. Dalmer*, M. Uhrmacher*, M. Restle*, U. Vetter*, L. Ziegeler*, H. Hofsäss*, T. Gehrke n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Metal and Thin Film Mechanics
Source: Web Of Science
Added: August 6, 2018

2000 article

Pendeo-epitaxial growth of gallium nitride on silicon substrates

Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., Zorman, C., … Davis, R. F. (2000, March 1). Journal of Electronic Materials.

By: T. Gehrke n, K. Linthicum n, E. Preble n, P. Rajagopal n, C. Ronning n, C. Zorman *, M. Mehregany *, R. Davis n

author keywords: Pendeo epitaxy; lateral epitaxy; gallium nitride (GaN); silicon substrates; selective growth; coalescence; metalorganic vapor phase epitaxy (MOVPE)
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Silicon Carbide Semiconductor Technologies
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Photoluminescence characterization of Mg implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628.

By: C. Ronning, H. Hofsass, A. Stotzler, M. Deicher, E. Carlson, P. Hartlieb, T. Gehrke, P. Rajagopal, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Characterization of Be-implanted GaN annealed at high temperatures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).

By: C. Ronning, K. Linthicum, E. Carlson, P. Hartlieb, D. Thomson, T. Gehrke, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 article

Room temperature growth of cubic boron nitride

Feldermann, H., Merk, R., Hofsäss, H., Ronning, C., & Zheleva, T. (1999, March 15). Applied Physics Letters.

By: H. Feldermann*, R. Merk*, H. Hofsäss*, C. Ronning n & T. Zheleva n

topics (OpenAlex): Diamond and Carbon-based Materials Research; Boron and Carbon Nanomaterials Research; Metal and Thin Film Mechanics
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 article

Valence band discontinuity of the (0001) 2H-GaN / (111) 3C-SiC interface

King, S. W., Davis, R. F., Ronning, C., & Nemanich, R. J. (1999, December 1). Journal of Electronic Materials.

By: S. King n, R. Davis n, C. Ronning* & R. Nemanich n

author keywords: GaN; SiC; valence band; discontinuity; gallium nitride; silicon carbide; x-ray photoelectron spectroscopy; ultra-violet photoelectron spectroscopy
topics (OpenAlex): GaN-based semiconductor devices and materials; Silicon Carbide Semiconductor Technologies; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

1999 article

Valence band discontinuity, surface reconstruction, and chemistry of (0001), (0001), and (1100) 2H–AlN/6H–SiC interfaces

King, S. W., Davis, R. F., Ronning, C., Benjamin, M. C., & Nemanich, R. J. (1999, October 15). Journal of Applied Physics.

By: S. King n, R. Davis n, C. Ronning*, M. Benjamin n & R. Nemanich n

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Semiconductor materials and devices; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Carbon nitride deposited using energetic species: A review on XPS studies

Physical Review. B, Condensed Matter and Materials Physics, 58(4), 2207–2215.

By: C. Ronning, H. Feldermann, R. Merk, H. Hofsass, P. Reinke & J. Thiele

Source: NC State University Libraries
Added: August 6, 2018

1998 article

Cleaning of AlN and GaN surfaces

King, S. W., Barnak, J. P., Bremser, M. D., Tracy, K. M., Ronning, C., Davis, R. F., & Nemanich, R. J. (1998, November 1). Journal of Applied Physics.

By: S. King n, J. Barnak n, M. Bremser n, K. Tracy n, C. Ronning n, R. Davis n, R. Nemanich n

topics (OpenAlex): GaN-based semiconductor devices and materials; Plasma Diagnostics and Applications; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

1998 article

Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction

King, S. W., Ronning, C., Davis, R. F., Benjamin, M. C., & Nemanich, R. J. (1998, August 15). Journal of Applied Physics.

By: S. King n, C. Ronning n, R. Davis n, M. Benjamin n & R. Nemanich n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Source: Web Of Science
Added: August 6, 2018

1998 article

Lattice site location studies of ion implanted Li8 in GaN

Dalmer, M., Restle, M., Sebastian, M., Vetter, U., Hofsäss, H., Bremser, M. D., … Bharuth-Ram, K. (1998, September 15). Journal of Applied Physics.

By: M. Dalmer*, M. Restle*, M. Sebastian *, U. Vetter*, H. Hofsäss*, M. Bremser n, C. Ronning n, R. Davis n, U. Wahl *, K. Bharuth-Ram *

topics (OpenAlex): Semiconductor materials and interfaces; Semiconductor materials and devices; Ion-surface interactions and analysis
Source: Web Of Science
Added: August 6, 2018

1998 article

Optical activation of Be implanted into GaN

Ronning, C., Carlson, E. P., Thomson, D. B., & Davis, R. F. (1998, September 21). Applied Physics Letters.

By: C. Ronning n, E. Carlson n, D. Thomson n & R. Davis n

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Semiconductor materials and devices
Source: Web Of Science
Added: August 6, 2018

1998 article

Structural and electronic properties of boron nitride thin films containing silicon

Ronning, C., Banks, A. D., McCarson, B. L., Schlesser, R., Sitar, Z., Davis, R. F., … Nemanich, R. J. (1998, November 1). Journal of Applied Physics.

By: C. Ronning n, A. Banks n, B. McCarson n, R. Schlesser n, Z. Sitar n, R. Davis n, B. Ward n, R. Nemanich n

topics (OpenAlex): Graphene research and applications; Diamond and Carbon-based Materials Research; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 article

X-ray photoelectron diffraction from (3×3) and (√3×√3)R 30° (0001)Si 6H–SiC surfaces

King, S. W., Ronning, C., Davis, R. F., Busby, R. S., & Nemanich, R. J. (1998, December 1). Journal of Applied Physics.

By: S. King n, C. Ronning n, R. Davis n, R. Busby n & R. Nemanich n

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Electron and X-Ray Spectroscopy Techniques; Semiconductor materials and interfaces
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

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