Works (16)

Updated: July 5th, 2023 16:03

2001 article

Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates

Davis, R. F., Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., … Mehregany, M. (2001, October). JOURNAL OF CRYSTAL GROWTH, Vol. 231, pp. 335–341.

By: R. Davis n, T. Gehrke n, K. Linthicum n, E. Preble n, P. Rajagopal n, C. Ronning*, C. Zorman*, M. Mehregany*

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
author keywords: characterization; defects; dislocations; X-ray diffraction; selective growth; metalorganic chemical vapor deposition metalorganic vapor phase epitaxy; pendeoepitaxy; gallium compounds; nitrides; silicon; semiconducting gallium compounds; scanning electron microscopy; transmission electron microscopy
Source: Web Of Science
Added: August 6, 2018

2001 review

Ion implantation into gallium nitride

[Review of ]. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 351(5), 349–385.

By: C. Ronning*, E. Carlson & R. Davis

co-author countries: Germany 🇩🇪
author keywords: ion implantation; gallium nitride; structural properties; optical properties; dopants
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery

JOURNAL OF APPLIED PHYSICS, 87(5), 2149–2157.

By: C. Ronning*, M. Dalmer, M. Uhrmacher, M. Restle, U. Vetter, L. Ziegeler, H. Hofsass, T. Gehrke*, K. Jarrendahl*, R. Davis*

Source: Web Of Science
Added: August 6, 2018

2000 journal article

Pendeo-epitaxial growth of gallium nitride on silicon substrates

JOURNAL OF ELECTRONIC MATERIALS, 29(3), 306–310.

By: T. Gehrke n, K. Linthicum n, E. Preble n, P. Rajagopal n, C. Ronning n, C. Zorman*, M. Mehregany*, R. Davis n

co-author countries: United States of America 🇺🇸
author keywords: Pendeo epitaxy; lateral epitaxy; gallium nitride (GaN); silicon substrates; selective growth; coalescence; metalorganic vapor phase epitaxy (MOVPE)
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Photoluminescence characterization of Mg implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628.

By: C. Ronning, H. Hofsass, A. Stotzler, M. Deicher, E. Carlson, P. Hartlieb, T. Gehrke, P. Rajagopal, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Characterization of Be-implanted GaN annealed at high temperatures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Room temperature growth of cubic boron nitride

APPLIED PHYSICS LETTERS, 74(11), 1552–1554.

By: H. Feldermann*, R. Merk*, H. Hofsass*, C. Ronning n & T. Zheleva n

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface

JOURNAL OF ELECTRONIC MATERIALS, 28(12), L34–L37.

By: S. King n, R. Davis n, C. Ronning* & R. Nemanich n

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
author keywords: GaN; SiC; valence band; discontinuity; gallium nitride; silicon carbide; x-ray photoelectron spectroscopy; ultra-violet photoelectron spectroscopy
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Valence band discontinuity, surface reconstruction, and chemistry of (0001), (000(1)over-bar), and (1(1)over-bar-00) 2H-AlN/6H-SiC interfaces

JOURNAL OF APPLIED PHYSICS, 86(8), 4483–4490.

By: S. King n, R. Davis n, C. Ronning*, M. Benjamin n & R. Nemanich n

co-author countries: Germany 🇩🇪 United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Carbon nitride deposited using energetic species: A review on XPS studies

Physical Review. B, Condensed Matter and Materials Physics, 58(4), 2207–2215.

By: C. Ronning, H. Feldermann, R. Merk, H. Hofsass, P. Reinke & J. Thiele

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Cleaning of AlN and GaN surfaces

JOURNAL OF APPLIED PHYSICS, 84(9), 5248–5260.

By: S. King n, J. Barnak n, M. Bremser n, K. Tracy n, C. Ronning n, R. Davis n, R. Nemanich n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction

JOURNAL OF APPLIED PHYSICS, 84(4), 2086–2090.

By: S. King n, C. Ronning n, R. Davis n, M. Benjamin n & R. Nemanich n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Lattice site location studies of ion implanted Li-8 in GaN

JOURNAL OF APPLIED PHYSICS, 84(6), 3085–3089.

By: M. Dalmer, M. Restle, M. Sebastian, U. Vetter, H. Hofsass, M. Bremser*, C. Ronning*, R. Davis*, U. Wahl, K. Bharuth-Ram

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Optical activation of Be implanted into GaN

APPLIED PHYSICS LETTERS, 73(12), 1622–1624.

By: C. Ronning n, E. Carlson n, D. Thomson n & R. Davis n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Structural and electronic properties of boron nitride thin films containing silicon

JOURNAL OF APPLIED PHYSICS, 84(9), 5046–5051.

By: C. Ronning n, A. Banks n, B. McCarson n, R. Schlesser n, Z. Sitar n, R. Davis n, B. Ward n, R. Nemanich n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1998 journal article

X-ray photoelectron diffraction from (3X3) and (root 3X root 3)R30 degrees (001)(Si) 6H-SiC surfaces

JOURNAL OF APPLIED PHYSICS, 84(11), 6042–6048.

By: S. King n, C. Ronning n, R. Davis n, R. Busby n & R. Nemanich n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

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