@article{davis_gehrke_linthicum_preble_rajagopal_ronning_zorman_mehregany_2001, title={Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates}, volume={231}, DOI={10.1016/S0022-0248(01)01462-2}, number={3}, journal={Journal of Crystal Growth}, author={Davis, R. F. and Gehrke, T. and Linthicum, K. J. and Preble, E. and Rajagopal, P. and Ronning, C. and Zorman, C. and Mehregany, M.}, year={2001}, pages={335–341} }
 @article{ronning_carlson_davis_2001, title={Ion implantation into gallium nitride}, volume={351}, DOI={10.1016/S0370-1573(00)00142-3}, number={5}, journal={Physics Reports}, author={Ronning, C. and Carlson, E. P. and Davis, R. F.}, year={2001}, pages={349–385} }
 @article{ronning_dalmer_uhrmacher_restle_vetter_ziegeler_hofsass_gehrke_jarrendahl_davis_2000, title={Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery}, volume={87}, DOI={10.1063/1.372154}, number={5}, journal={Journal of Applied Physics}, author={Ronning, C. and Dalmer, M. and Uhrmacher, M. and Restle, M. and Vetter, U. and Ziegeler, L. and Hofsass, H. and Gehrke, T. and Jarrendahl, K. and Davis, R. F.}, year={2000}, pages={2149–2157} }
 @article{gehrke_linthicum_preble_rajagopal_ronning_zorman_mehregany_davis_2000, title={Pendeo-epitaxial growth of gallium nitride on silicon substrates}, volume={29}, DOI={10.1007/s11664-000-0068-6}, number={3}, journal={Journal of Electronic Materials}, author={Gehrke, T. and Linthicum, K. J. and Preble, E. and Rajagopal, P. and Ronning, C. and Zorman, C. and Mehregany, M. and Davis, R. F.}, year={2000}, pages={306–310} }
 @article{ronning_hofsass_stotzler_deicher_carlson_hartlieb_gehrke_rajagopal_davis_2000, title={Photoluminescence characterization of Mg implanted GaN}, volume={5}, number={2000}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Ronning, C. and Hofsass, H. and Stotzler, A. and Deicher, M. and Carlson, E. P. and Hartlieb, P. J. and Gehrke, T. and Rajagopal, P. and Davis, R. F.}, year={2000}, pages={U622–628} }
 @article{ronning_linthicum_carlson_hartlieb_thomson_gehrke_davis_1999, title={Characterization of Be-implanted GaN annealed at high temperatures}, volume={4S1}, number={G3.17}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Ronning, C. and Linthicum, K. J. and Carlson, E. P. and Hartlieb, P. J. and Thomson, D. B. and Gehrke, T. and Davis, R. F.}, year={1999} }
 @article{feldermann_merk_hofsass_ronning_zheleva_1999, title={Room temperature growth of cubic boron nitride}, volume={74}, DOI={10.1063/1.123613}, number={11}, journal={Applied Physics Letters}, author={Feldermann, H. and Merk, R. and Hofsass, H. and Ronning, C. and Zheleva, T.}, year={1999}, pages={1552–1554} }
 @article{king_davis_ronning_nemanich_1999, title={Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface}, volume={28}, DOI={10.1007/s11664-999-0145-4}, number={12}, journal={Journal of Electronic Materials}, author={King, S. W. and Davis, R. F. and Ronning, C. and Nemanich, R. J.}, year={1999}, pages={L34–37} }
 @article{king_davis_ronning_benjamin_nemanich_1999, title={Valence band discontinuity, surface reconstruction, and chemistry of (0001), (000(1)over-bar), and (1(1)over-bar-00) 2H-AlN/6H-SiC interfaces}, volume={86}, DOI={10.1063/1.371391}, number={8}, journal={Journal of Applied Physics}, author={King, S. W. and Davis, R. F. and Ronning, C. and Benjamin, M. C. and Nemanich, R. J.}, year={1999}, pages={4483–4490} }
 @article{ronning_feldermann_merk_hofsass_reinke_thiele_1998, title={Carbon nitride deposited using energetic species: A review on XPS studies}, volume={58}, number={4}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Ronning, C. and Feldermann, H. and Merk, R. and Hofsass, H. and Reinke, P. and Thiele, J. U.}, year={1998}, pages={2207–2215} }
 @article{king_barnak_bremser_tracy_ronning_davis_nemanich_1998, title={Cleaning of AlN and GaN surfaces}, volume={84}, DOI={10.1063/1.368814}, number={9}, journal={Journal of Applied Physics}, author={King, S. W. and Barnak, J. P. and Bremser, M. D. and Tracy, K. M. and Ronning, C. and Davis, R. F. and Nemanich, R. J.}, year={1998}, pages={5248–5260} }
 @article{king_ronning_davis_benjamin_nemanich_1998, title={Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction}, volume={84}, DOI={10.1063/1.368355}, number={4}, journal={Journal of Applied Physics}, author={King, S. W. and Ronning, C. and Davis, R. F. and Benjamin, M. C. and Nemanich, R. J.}, year={1998}, pages={2086–2090} }
 @article{dalmer_restle_sebastian_vetter_hofsass_bremser_ronning_davis_wahl_bharuth-ram_1998, title={Lattice site location studies of ion implanted Li-8 in GaN}, volume={84}, DOI={10.1063/1.368463}, number={6}, journal={Journal of Applied Physics}, author={Dalmer, M. and Restle, M. and Sebastian, M. and Vetter, U. and Hofsass, H. and Bremser, M. D. and Ronning, C. and Davis, R. F. and Wahl, U. and Bharuth-Ram, K.}, year={1998}, pages={3085–3089} }
 @article{ronning_carlson_thomson_davis_1998, title={Optical activation of Be implanted into GaN}, volume={73}, DOI={10.1063/1.122225}, number={12}, journal={Applied Physics Letters}, author={Ronning, C. and Carlson, E. P. and Thomson, D. B. and Davis, R. F.}, year={1998}, pages={1622–1624} }
 @article{ronning_banks_mccarson_schlesser_sitar_davis_ward_nemanich_1998, title={Structural and electronic properties of boron nitride thin films containing silicon}, volume={84}, DOI={10.1063/1.368752}, number={9}, journal={Journal of Applied Physics}, author={Ronning, C. and Banks, A. D. and McCarson, B. L. and Schlesser, R. and Sitar, Z. and Davis, R. F. and Ward, B. L. and Nemanich, R. J.}, year={1998}, pages={5046–5051} }
 @article{king_ronning_davis_busby_nemanich_1998, title={X-ray photoelectron diffraction from (3X3) and (root 3X root3)R30 degrees (001)(Si) 6H-SiC surfaces}, volume={84}, DOI={10.1063/1.368879}, number={11}, journal={Journal of Applied Physics}, author={King, S. W. and Ronning, C. and Davis, R. F. and Busby, R. S. and Nemanich, R. J.}, year={1998}, pages={6042–6048} }