C. Ronning

Davis, R. F., Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., … Mehregany, M. (2001, October). Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates. JOURNAL OF CRYSTAL GROWTH, Vol. 231, pp. 335–341. https://doi.org/10.1016/S0022-0248(01)01462-2

Ronning, C., Carlson, E. P., & Davis, R. F. (2001). [Review of Ion implantation into gallium nitride]. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 351(5), 349–385. https://doi.org/10.1016/S0370-1573(00)00142-3

Ronning, C., Dalmer, M., Uhrmacher, M., Restle, M., Vetter, U., Ziegeler, L., … Davis, R. F. (2000). Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery. JOURNAL OF APPLIED PHYSICS, 87(5), 2149–2157. https://doi.org/10.1063/1.372154

Gehrke, T., Linthicum, K. J., Preble, E., Rajagopal, P., Ronning, C., Zorman, C., … Davis, R. F. (2000). Pendeo-epitaxial growth of gallium nitride on silicon substrates. JOURNAL OF ELECTRONIC MATERIALS, 29(3), 306–310. https://doi.org/10.1007/s11664-000-0068-6

Ronning, C., Hofsass, H., Stotzler, A., Deicher, M., Carlson, E. P., Hartlieb, P. J., … Davis, R. F. (2000). Photoluminescence characterization of Mg implanted GaN. MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628.

Ronning, C., Linthicum, K. J., Carlson, E. P., Hartlieb, P. J., Thomson, D. B., Gehrke, T., & Davis, R. F. (1999). Characterization of Be-implanted GaN annealed at high temperatures. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).

Feldermann, H., Merk, R., Hofsass, H., Ronning, C., & Zheleva, T. (1999). Room temperature growth of cubic boron nitride. APPLIED PHYSICS LETTERS, 74(11), 1552–1554. https://doi.org/10.1063/1.123613

King, S. W., Davis, R. F., Ronning, C., & Nemanich, R. J. (1999). Valence band discontinuity of the (0001) 2H-GaN/(111) 3C-SiC interface. JOURNAL OF ELECTRONIC MATERIALS, 28(12), L34–L37. https://doi.org/10.1007/s11664-999-0145-4

King, S. W., Davis, R. F., Ronning, C., Benjamin, M. C., & Nemanich, R. J. (1999). Valence band discontinuity, surface reconstruction, and chemistry of (0001), (000(1)over-bar), and (1(1)over-bar-00) 2H-AlN/6H-SiC interfaces. JOURNAL OF APPLIED PHYSICS, 86(8), 4483–4490. https://doi.org/10.1063/1.371391

Ronning, C., Feldermann, H., Merk, R., Hofsass, H., Reinke, P., & Thiele, J. U. (1998). Carbon nitride deposited using energetic species: A review on XPS studies. Physical Review. B, Condensed Matter and Materials Physics, 58(4), 2207–2215.

King, S. W., Barnak, J. P., Bremser, M. D., Tracy, K. M., Ronning, C., Davis, R. F., & Nemanich, R. J. (1998). Cleaning of AlN and GaN surfaces. JOURNAL OF APPLIED PHYSICS, 84(9), 5248–5260. https://doi.org/10.1063/1.368814

King, S. W., Ronning, C., Davis, R. F., Benjamin, M. C., & Nemanich, R. J. (1998). Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction. JOURNAL OF APPLIED PHYSICS, 84(4), 2086–2090. https://doi.org/10.1063/1.368355

Dalmer, M., Restle, M., Sebastian, M., Vetter, U., Hofsass, H., Bremser, M. D., … Bharuth-Ram, K. (1998). Lattice site location studies of ion implanted Li-8 in GaN. JOURNAL OF APPLIED PHYSICS, 84(6), 3085–3089. https://doi.org/10.1063/1.368463

Ronning, C., Carlson, E. P., Thomson, D. B., & Davis, R. F. (1998). Optical activation of Be implanted into GaN. APPLIED PHYSICS LETTERS, 73(12), 1622–1624. https://doi.org/10.1063/1.122225

Ronning, C., Banks, A. D., McCarson, B. L., Schlesser, R., Sitar, Z., Davis, R. F., … Nemanich, R. J. (1998). Structural and electronic properties of boron nitride thin films containing silicon. JOURNAL OF APPLIED PHYSICS, 84(9), 5046–5051. https://doi.org/10.1063/1.368752

King, S. W., Ronning, C., Davis, R. F., Busby, R. S., & Nemanich, R. J. (1998). X-ray photoelectron diffraction from (3X3) and (root 3X root 3)R30 degrees (001)(Si) 6H-SiC surfaces. JOURNAL OF APPLIED PHYSICS, 84(11), 6042–6048. https://doi.org/10.1063/1.368879