Jeffrey D. Hartman

Photo-electron emission and atomic force microscopies of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and AlN

Applied Surface Science, 242(04-Mar), 428–436.

Characterization of hydrogen etched 6h-sic(0001) substrates and subsequently grown AlN films

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 21(2), 394–400.

TiC nanoisland formation on 6H-SiC(0001)(Si)

Journal of Applied Physics, 91(9), 6081–6084.

Growth of epitaxial CoSi2 on 6H-SiC(0001)(Si)

Journal of Applied Physics, 90(12), 5924–5927.

Photo-emission electron microscopy (PEEM) of cleaned and etched 6H-SiC(0001)

Materials Science Forum, 338(3), 353–356.

Schottky barrier height and electron affinity of titanium on AIN

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2082–2087.

Imaging electron emission from diamond and III-V nitride surfaces with photo-electron emission microscopy

Applied Surface Science, 146(1-4), 287–294.

A free electron laser-photoemission electron microscope system (FEL-PEEM)

Surface Review and Letters, 5(6), 1257–1268.

Characterization of electron emitting surfaces of diamond and III-V nitrides

Diamond Films and Technology, 8(4), 211–223.

Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy

Journal of Applied Physics, 84(9), 5238–5242.