@misc{zheleva_thomson_smith_linthicum_gehrke_davis_2007, title={Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches}, volume={7,195,993}, number={2007 Mar. 27}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Zheleva, T. and Thomson, D. B. and Smith, S. A. and Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2007} }
 @misc{zheleva_thomson_smith_linthicum_gehrke_davis_2005, title={Second gallium nitride layers that extend into trenches in first gallium nitride layers}, volume={6,897,483}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Zheleva, T. and Thomson, D. B. and Smith, S. A. and Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2005} }
 @misc{zheleva_thomson_smith_linthicum_gehrke_davis_2001, title={Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby}, volume={6,265,289}, number={2001 July 24}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Zheleva, T. and Thomson, D. B. and Smith, S. A. and Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2001} }
 @article{smith_lampert_rajagopal_banks_thomson_davis_2000, title={Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry}, volume={18}, ISSN={["1520-8559"]}, DOI={10.1116/1.582270}, abstractNote={An alternative method for achieving etching selectivity between GaN and AlN has been demonstrated. The etch rate of AlN was significantly decreased by the addition of a low concentration of O2 to a Cl2–Ar mixture in an inductively coupled plasma (ICP) etching system. The etch rate of GaN in the O2-containing plasma was approximately 15% less than the plasma without the O2 for the same parameters. The pressure and the ICP power were varied to achieve a maximum selectivity of 48 at a pressure of 10 mTorr, a direct current bias of −150 V, and an ICP power of 500 W. The etch rates of GaN and AlN at these parameters were 4800 and 100 Å/min, respectively.}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Smith, SA and Lampert, WV and Rajagopal, P and Banks, AD and Thomson, D and Davis, RF}, year={2000}, pages={879–881} }
 @misc{zheleva_smith_thomson_linthicum_rajagopal_davis_1999, title={Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films}, volume={28}, number={4}, journal={Journal of Electronic Materials}, author={Zheleva, T. S. and Smith, S. A. and Thomson, D. B. and Linthicum, K. J. and Rajagopal, P. and Davis, R. F.}, year={1999}, pages={L5–8} }
 @article{zheleva_smith_thomson_gehrke_linthicum_rajagopal_carlson_ashmawi_davis_1999, title={Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures}, volume={4S1}, number={G3.38}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Zheleva, T. S. and Smith, S. A. and Thomson, D. B. and Gehrke, T. and Linthicum, K. J. and Rajagopal, P. and Carlson, E. and Ashmawi, W. M. and Davis, R. F.}, year={1999} }
 @article{noga_smith_smith_1999, title={Turbellarian infection of carangids.}, volume={22}, ISSN={["0140-7775"]}, DOI={10.1046/j.1365-2761.1999.00187.x}, number={6}, journal={JOURNAL OF FISH DISEASES}, author={Noga, EJ and Smith, J and Smith, SA}, year={1999}, month={Nov}, pages={489–491} }