Darren B. Thomson

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches

Washington, DC: U.S. Patent and Trademark Office.

Phonon-assisted stimulated emission from pendeoepitaxy GaN stripes grown on 6H-SiC substrates

Applied Physics Letters, 91(5).

Second gallium nitride layers that extend into trenches in first gallium nitride layers

Washington, DC: U.S. Patent and Trademark Office.

Methods of fabricating gallium nitride microelectronic layers on silicon layers

Washington, DC: U.S. Patent and Trademark Office.

Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(1), 294–301.

Effect of implantation temperature on damage accumulation in Ar-implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 7(9), 9–1.

Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio

JOURNAL OF CRYSTAL GROWTH, 236(4), 529–537.

High temperature nucleation and growth of GaN crystals from the vapor phase

JOURNAL OF CRYSTAL GROWTH, 241(4), 404–415.

High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Washington, DC: U.S. Patent and Trademark Office.

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions

SOLID-STATE ELECTRONICS, 46(6), 827–835.

In situ cleaning of GaN/6H-SiC substrates in NH3

JOURNAL OF CRYSTAL GROWTH, 222(3), 452–458.

Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams

SURFACE SCIENCE, 494(1), 28–42.

Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Dry etching and metallization schemes in a GaN/SiC heterojunction device process

Materials Science Forum, 338(3), 1049–1052.

Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 18(3), 879–881.

Characterization of Be-implanted GaN annealed at high temperatures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).

FEG-SEM imaging of semiconductor dopant contrast

Microscopy of Semiconducting Materials 1999: Proceedings of the Institute of Physics Conference Held at Oxford University, 22-25 March, 1999, 164(1999), 727–730.

Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN

Hanser, A. D., Nam, O. H., Bremser, M. D., Thomson, D. B., Gehrke, T., Zheleva, T. S., & Davis, R. F. (1999, March). DIAMOND AND RELATED MATERIALS, Vol. 8, pp. 288–294.

Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electronmicroscopy

Physica Status Solidi. A, Applications and Materials Science, 176(1), 469–473.

Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source

APPLIED PHYSICS LETTERS, 75(7), 989–991.

Ni/Si-based contacts to GaN: Thermally activated structural transformations leading to ohmic behavior

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G9.9).

Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.2).

Pendeo-epitaxy of gallium nitride thin films

Applied Physics Letters, 75(2), 196–198.

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).

Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).

Ranges of deposition temperatures applicable for metalorganic vapor phase epitaxy of GaN films via the technique of pendeo- epitaxy

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.37).

Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 61-2(1999 July 30), 320–324.