Works (31)

2008 patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2007 patent

Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches

Washington, DC: U.S. Patent and Trademark Office.

By: T. Zheleva, D. Thomson, S. Smith, K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2007 journal article

Phonon-assisted stimulated emission from pendeoepitaxy GaN stripes grown on 6H-SiC substrates

Applied Physics Letters, 91(5).

By: Y. Chang, Y. Li, D. Thomson & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 patent

Second gallium nitride layers that extend into trenches in first gallium nitride layers

Washington, DC: U.S. Patent and Trademark Office.

By: T. Zheleva, D. Thomson, S. Smith, K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Methods of fabricating gallium nitride microelectronic layers on silicon layers

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke, R. Davis, D. Thomson & K. Tracy

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 21(1), 294–301.

By: A. McGinnis, D. Thomson, A. Banks, E. Preble, R. Davis & H. Lamb

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Effect of implantation temperature on damage accumulation in Ar-implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 7(9), 9–1.

By: I. Usov, N. Parikh, D. Thomson & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio

Journal of Crystal Growth, 236(4), 529–537.

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

High temperature nucleation and growth of GaN crystals from the vapor phase

Journal of Crystal Growth, 241(4), 404–415.

By: H. Shin, D. Thomson, R. Schlesser, R. Davis & Z. Sitar

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum, R. Davis & D. Thomson

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions

Solid-State Electronics, 46(6), 827–835.

By: E. Danielsson, C. Zetterling, M. Ostling, K. Linthicum, D. Thomson, O. Nam, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

In situ cleaning of GaN/6H-SiC substrates in NH3

Journal of Crystal Growth, 222(3), 452–458.

By: A. McGinnis, D. Thomson, R. Davis, E. Chen, A. Michel & H. Lamb

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams

Surface Science, 494(1), 28–42.

By: A. McGinnis, D. Thomson, R. Davis, E. Chen, A. Michel & H. Lamb

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Zheleva, D. Thomson, S. Smith, K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Dry etching and metallization schemes in a GaN/SiC heterojunction device process

Materials Science Forum, 338(3), 1049–1052.

By: E. Danielsson, C. Zetterling, M. Ostling, S. Lee, K. Linthicum, D. Thomson, O. Nam, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 18(3), 879–881.

By: S. Smith, W. Lampert, P. Rajagopal, A. Banks, D. Thomson & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Characterization of Be-implanted GaN annealed at high temperatures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

FEG-SEM imaging of semiconductor dopant contrast

Microscopy of Semiconducting Materials 1999: Proceedings of the Institute of Physics Conference Held at Oxford University, 22-25 March, 1999, 164(1999), 727–730.

By: B. Elliott S.L., T. Humphreys C.J., T. Considine L. & D. W.B.

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN

Diamond and Related Materials, 8(2-5), 288–294.

By: A. Hanser, O. Nam, M. Bremser, D. Thomson, T. Gehrke, T. Zheleva, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electronmicroscopy

Physica Status Solidi. A, Applications and Materials Science, 176(1), 469–473.

By: A. Pavlovska, V. Torres, J. Edwards, E. Bauer, D. Smith, R. Doak, I. Tsong, D. Thomson, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source

Applied Physics Letters, 75(7), 989–991.

By: A. Pavlovska, V. Torres, E. Bauer, R. Doak, I. Tsong, D. Thomson, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Ni/Si-based contacts to GaN: Thermally activated structural transformations leading to ohmic behavior

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G9.9).

By: E. Kaminska, A. Piotrowska, J. Jasinski, J. Kozubowski, A. Barcz, K. Golaszewska, D. Thomson, R. Davis, M. Bremser

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.2).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy of gallium nitride thin films

Applied Physics Letters, 75(2), 196–198.

By: K. Linthicum, T. Gehrke, D. Thomson, E. Carlson, P. Rajagopal, T. Smith, D. Batchelor, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 personal communication

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films

By: T. Zheleva, S. Smith, D. Thomson, K. Linthicum, P. Rajagopal & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).

By: K. Linthicum, T. Gehrke, D. Thomson, K. Tracy, E. Carlson, T. Smith, T. Zheleva, C. Zorman, M. Mehregany, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Ranges of deposition temperatures applicable for metalorganic vapor phase epitaxy of GaN films via the technique of pendeo- epitaxy

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.37).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 61-2(1999 July 30), 320–324.

By: E. Danielsson, C. Zetterling, M. Ostling, B. Breitholtz, K. Linthicum, D. Thomson, O. Nam, R. Davis

Source: NC State University Libraries
Added: August 6, 2018