@misc{linthicum_gehrke_thomson_carlson_rajagopal_davis_2008, title={Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates}, volume={7,378,684}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Davis, R. F.}, year={2008} }
 @misc{zheleva_thomson_smith_linthicum_gehrke_davis_2007, title={Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches}, volume={7,195,993}, number={2007 Mar. 27}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Zheleva, T. and Thomson, D. B. and Smith, S. A. and Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2007} }
 @article{chang_li_thomson_davis_2007, title={Phonon-assisted stimulated emission from pendeoepitaxy GaN stripes grown on 6H-SiC substrates}, volume={91}, number={5}, journal={Applied Physics Letters}, author={Chang, Y. C. and Li, Y. L. and Thomson, D. B. and Davis, R. F.}, year={2007} }
 @misc{zheleva_thomson_smith_linthicum_gehrke_davis_2005, title={Second gallium nitride layers that extend into trenches in first gallium nitride layers}, volume={6,897,483}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Zheleva, T. and Thomson, D. B. and Smith, S. A. and Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2005} }
 @misc{linthicum_gehrke_davis_thomson_tracy_2003, title={Methods of fabricating gallium nitride microelectronic layers on silicon layers}, volume={6,602,764}, number={2003 Aug. 5}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Davis, R. F. and Thomson, D. B. and Tracy, K. M.}, year={2003} }
 @article{mcginnis_thomson_banks_preble_davis_lamb_2003, title={Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia}, volume={21}, DOI={10.1116/1.1532736}, number={1}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={McGinnis, A. J. and Thomson, D. and Banks, A. and Preble, E. and Davis, R. F. and Lamb, H. H.}, year={2003}, pages={294–301} }
 @article{usov_parikh_thomson_davis_2002, title={Effect of implantation temperature on damage accumulation in Ar-implanted GaN}, volume={7}, number={9}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Usov, I. and Parikh, N. and Thomson, D. B. and Davis, R. F.}, year={2002}, pages={9–1} }
 @article{shin_arkun_thomson_miraglia_preble_schlesser_wolter_sitar_davis_2002, title={Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio}, volume={236}, DOI={10.1016/S0022-0248(02)00825-4}, number={4}, journal={Journal of Crystal Growth}, author={Shin, H. and Arkun, E. and Thomson, D. B. and Miraglia, P. and Preble, E. and Schlesser, R. and Wolter, S. and Sitar, Z. and Davis, R. F.}, year={2002}, pages={529–537} }
 @article{shin_thomson_schlesser_davis_sitar_2002, title={High temperature nucleation and growth of GaN crystals from the vapor phase}, volume={241}, DOI={10.1016/S0022-0248(02)01290-3}, number={4}, journal={Journal of Crystal Growth}, author={Shin, H. and Thomson, D. B. and Schlesser, R. and Davis, R. F. and Sitar, Z.}, year={2002}, pages={404–415} }
 @misc{gehrke_linthicum_davis_thomson_2002, title={High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates}, volume={6,489,221}, number={2002 Dec. 3}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gehrke, T. and Linthicum, K. J. and Davis, R. F. and Thomson, D. B.}, year={2002} }
 @misc{linthicum_gehrke_thomson_carlson_rajagopal_davis_2002, title={Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates}, volume={6,462,355}, number={2002 Oct. 8}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Davis, R. F.}, year={2002} }
 @article{danielsson_zetterling_ostling_linthicum_thomson_nam_davis_2002, title={The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions}, volume={46}, DOI={10.1016/S0038-1101(01)00346-X}, number={6}, journal={Solid-state Electronics}, author={Danielsson, E. and Zetterling, C. M. and Ostling, M. and Linthicum, K. and Thomson, D. B. and Nam, O. H. and Davis, R. F.}, year={2002}, pages={827–835} }
 @article{mcginnis_thomson_davis_chen_michel_lamb_2001, title={In situ cleaning of GaN/6H-SiC substrates in NH3}, volume={222}, DOI={10.1016/s0022-0248(00)00947-7}, number={3}, journal={Journal of Crystal Growth}, author={McGinnis, A. J. and Thomson, D. and Davis, R. F. and Chen, E. and Michel, A. and Lamb, H. H.}, year={2001}, pages={452–458} }
 @article{mcginnis_thomson_davis_chen_michel_lamb_2001, title={Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams}, volume={494}, DOI={10.1016/S0039-6028(01)01466-2}, number={1}, journal={Surface Science}, author={McGinnis, A. J. and Thomson, D. and Davis, R. F. and Chen, E. and Michel, A. and Lamb, H. H.}, year={2001}, pages={28–42} }
 @misc{zheleva_thomson_smith_linthicum_gehrke_davis_2001, title={Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby}, volume={6,265,289}, number={2001 July 24}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Zheleva, T. and Thomson, D. B. and Smith, S. A. and Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2001} }
 @misc{linthicum_gehrke_thomson_carlson_rajagopal_davis_2001, title={Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates}, volume={6,177,688}, number={2001 Jan. 23}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Davis, R. F.}, year={2001} }
 @article{danielsson_zetterling_ostling_lee_linthicum_thomson_nam_davis_2000, title={Dry etching and metallization schemes in a GaN/SiC heterojunction device process}, volume={338}, number={3}, journal={Materials Science Forum}, author={Danielsson, E. and Zetterling, C. M. and Ostling, M. and Lee, S. K. and Linthicum, K. J. and Thomson, D. B. and Nam, O. H. and Davis, R. F.}, year={2000}, pages={1049–1052} }
 @article{smith_lampert_rajagopal_banks_thomson_davis_2000, title={Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry}, volume={18}, DOI={10.1116/1.582270}, number={3}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Smith, S. A. and Lampert, W. V. and Rajagopal, P. and Banks, A. D. and Thomson, D. and Davis, R. F.}, year={2000}, pages={879–881} }
 @article{ronning_linthicum_carlson_hartlieb_thomson_gehrke_davis_1999, title={Characterization of Be-implanted GaN annealed at high temperatures}, volume={4S1}, number={G3.17}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Ronning, C. and Linthicum, K. J. and Carlson, E. P. and Hartlieb, P. J. and Thomson, D. B. and Gehrke, T. and Davis, R. F.}, year={1999} }
 @article{elliott s.l._humphreys c.j._considine l._w.b._1999, title={FEG-SEM imaging of semiconductor dopant contrast}, volume={164}, ISBN={0750306505}, number={1999}, journal={Microscopy of semiconducting materials 1999: Proceedings of the Institute of Physics conference held at Oxford University, 22-25 March, 1999}, publisher={Philadelphia, Pa.: Institute of Physics Publishing}, author={Elliott S.L., Broom R.F. and Humphreys C.J., Thrush E.J. and Considine L., Thomson D.B. and W.B., De Boer}, year={1999}, pages={727–730} }
 @article{hanser_nam_bremser_thomson_gehrke_zheleva_davis_1999, title={Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN}, volume={8}, DOI={10.1016/S0925-9635(98)00341-0}, number={2-5}, journal={Diamond and Related Materials}, author={Hanser, A. D. and Nam, O. H. and Bremser, M. D. and Thomson, D. B. and Gehrke, T. and Zheleva, T. S. and Davis, R. F.}, year={1999}, pages={288–294} }
 @article{pavlovska_torres_edwards_bauer_smith_doak_tsong_thomson_davis_1999, title={Homoepitaxial GaN layers studied by low-energy electron microscopy, atomic force microscopy and transmission electronmicroscopy}, volume={176}, number={1}, journal={Physica Status Solidi. A, Applications and Materials Science}, author={Pavlovska, A. and Torres, V. M. and Edwards, J. L. and Bauer, E. and Smith, D. J. and Doak, R. B. and Tsong, I. S. T. and Thomson, D. B. and Davis, R. F.}, year={1999}, pages={469–473} }
 @article{pavlovska_torres_bauer_doak_tsong_thomson_davis_1999, title={Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source}, volume={75}, DOI={10.1063/1.124575}, number={7}, journal={Applied Physics Letters}, author={Pavlovska, A. and Torres, V. M. and Bauer, E. and Doak, R. B. and Tsong, I. S. T. and Thomson, D. B. and Davis, R. F.}, year={1999}, pages={989–991} }
 @article{kaminska_piotrowska_jasinski_kozubowski_barcz_golaszewska_thomson_davis_bremser_1999, title={Ni/Si-based contacts to GaN: Thermally activated structural transformations leading to ohmic behavior}, volume={4S1}, number={G9.9}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Kaminska, E. and Piotrowska, A. and Jasinski, J. and Kozubowski, J. and Barcz, A. and Golaszewska, K. and Thomson, D. B. and Davis, R. F. and Bremser, M. D.}, year={1999} }
 @article{gehrke_linthicum_thomson_rajagopal_batchelor_davis_1999, title={Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate}, volume={4S1}, number={G3.2}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Gehrke, T. and Linthicum, K. J. and Thomson, D. B. and Rajagopal, P. and Batchelor, A. D. and Davis, R. F.}, year={1999} }
 @article{linthicum_gehrke_thomson_carlson_rajagopal_smith_batchelor_davis_1999, title={Pendeo-epitaxy of gallium nitride thin films}, volume={75}, DOI={10.1063/1.124317}, number={2}, journal={Applied Physics Letters}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Smith, T. and Batchelor, D. and Davis, R.}, year={1999}, pages={196–198} }
 @misc{zheleva_smith_thomson_linthicum_rajagopal_davis_1999, title={Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films}, volume={28}, number={4}, journal={Journal of Electronic Materials}, author={Zheleva, T. S. and Smith, S. A. and Thomson, D. B. and Linthicum, K. J. and Rajagopal, P. and Davis, R. F.}, year={1999}, pages={L5–8} }
 @article{zheleva_smith_thomson_gehrke_linthicum_rajagopal_carlson_ashmawi_davis_1999, title={Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures}, volume={4S1}, number={G3.38}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Zheleva, T. S. and Smith, S. A. and Thomson, D. B. and Gehrke, T. and Linthicum, K. J. and Rajagopal, P. and Carlson, E. and Ashmawi, W. M. and Davis, R. F.}, year={1999} }
 @article{linthicum_gehrke_thomson_tracy_carlson_smith_zheleva_zorman_mehregany_davis_1999, title={Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques}, volume={4S1}, number={G4.9}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Tracy, K. M. and Carlson, E. P. and Smith, T. P. and Zheleva, T. S. and Zorman, C. A. and Mehregany, M. and Davis, R. F.}, year={1999} }
 @article{thomson_gehrke_linthicum_rajagopal_davis_1999, title={Ranges of deposition temperatures applicable for metalorganic vapor phase epitaxy of GaN films via the technique of pendeo- epitaxy}, volume={4S1}, number={G3.37}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Thomson, D. B. and Gehrke, T. and Linthicum, K. J. and Rajagopal, P. and Davis, R. F.}, year={1999} }
 @article{danielsson_zetterling_ostling_breitholtz_linthicum_thomson_nam_davis_1999, title={Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes}, volume={61-2}, number={1999 July 30}, journal={Materials Science & Engineering. B, Solid-state Materials for Advanced Technology}, author={Danielsson, E. and Zetterling, C. M. and Ostling, M. and Breitholtz, B. and Linthicum, K. and Thomson, D. B. and Nam, O. H. and Davis, R. F.}, year={1999}, pages={320–324} }