@misc{piner_rajagopal_roberts_linthicum_2008, title={Gallium nitride material structures including substrates and methods associated with the same}, volume={7,365,374}, number={2008 Apr. 29}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Piner, E. L. and Rajagopal, P. and Roberts, J. C. and Linthicum, K. J.}, year={2008} }
 @misc{nagy_borges_brown_chaudhari_cook_hanson_johnson_linthicum_piner_rajagopal_et al._2008, title={Gallium nitride material transistors and methods associated with the same}, volume={7,352,016}, number={2008 Apr. 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Nagy, W. H. and Borges, R. M. and Brown, J. D. and Chaudhari, A. D. and Cook, J. W. and Hanson, A. W. and Johnson, J. W. and Linthicum, K. J. and Piner, E. L. and Rajagopal, P. and et al.}, year={2008} }
 @misc{linthicum_gehrke_thomson_carlson_rajagopal_davis_2008, title={Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates}, volume={7,378,684}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Davis, R. F.}, year={2008} }
 @article{al-ajmi_kolbas_roberts_rajagopal_cook_piner_linthicum_2008, title={Stimulated emission and lasing from an Al0.13Ga0.87N/GaN double heterostructure grown on a silicon substrate}, volume={92}, number={2}, journal={Applied Physics Letters}, author={Al-Ajmi, F. S. and Kolbas, R. M. and Roberts, J. C. and Rajagopal, P. and Cook, J. W. and Piner, E. L. and Linthicum, K. J.}, year={2008} }
 @article{al-ajmi_kolbas_roberts_rajagopal_cook_piner_linthicum_2007, title={Room temperature laser action from multiple bands in photoexcited GaN grown on a silicon substrate}, volume={90}, number={15}, journal={Applied Physics Letters}, author={Al-Ajmi, F. S. and Kolbas, R. M. and Roberts, J. C. and Rajagopal, P. and Cook, J. W. and Piner, E. L. and Linthicum, K. J.}, year={2007} }
 @misc{linthicum_gehrke_thomson_carlson_rajagopal_davis_2002, title={Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates}, volume={6,462,355}, number={2002 Oct. 8}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Davis, R. F.}, year={2002} }
 @misc{linthicum_gehrke_thomson_carlson_rajagopal_davis_2002, title={Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby}, volume={6,376,339}, number={2002 Apr. 23}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Davis, R. F.}, year={2002} }
 @article{davis_gehrke_linthicum_preble_rajagopal_ronning_zorman_mehregany_2001, title={Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates}, volume={231}, ISSN={["1873-5002"]}, DOI={10.1016/S0022-0248(01)01462-2}, abstractNote={Single-crystal wurtzitic GaN(0 0 0 1) films have been grown via conventional methods on high-temperature AlN(0 0 0 1) buffer layers previously deposited on 3C-SiC(1 1 1)/Si(1 1 1) substrates using metal organic vapor phase epitaxy (MOVPE). Formation of the 3C-SiC transition layer employed a carburization step and the subsequent deposition of epitaxial 3C-SiC(1 1 1) on the Si(1 1 1) surface using atmospheric pressure chemical vapor deposition (APCVD) for both processes. Similar films, except with significantly reduced dislocation densities, have been grown via pendeo-epitaxy (PE) from the (112̄0) sidewalls of silicon nitride masked, raised, rectangular, and [11̄00] oriented GaN stripes etched from films conventionally grown on similarly prepared, Si-based, multilayer substrates. The FWHM of the (0 0 0 2) X-ray diffraction peak of the conventionally grown GaN was 1443 arcsec. The FWHM of the photoluminescence (PL) spectra for the near band-edge emission on these films was 19 meV. Tilting in the coalesced PE-grown GaN epilayers of 0.2° was confined to the areas of lateral overgrowth over the masks; no tilting was observed in the material suspended above the trenches. The strong, low-temperature PL band-edge peak at 3.456 eV with an FWHM of 17 meV in the PE films was comparable to that observed in PE GaN films grown on AlN/6H-SiC(0 0 0 1) substrates.}, number={3}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Davis, RF and Gehrke, T and Linthicum, KJ and Preble, E and Rajagopal, P and Ronning, C and Zorman, C and Mehregany, M}, year={2001}, month={Oct}, pages={335–341} }
 @article{davis_gehrke_linthicum_zheleva_rajagopal_zorman_mehregany_2001, title={Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates}, volume={92}, number={2}, journal={Zeitschrift fur MetallkundeAmerican Journal of Physiology}, author={Davis, R. F. and Gehrke, T. and Linthicum, K. J. and Zheleva, T. S. and Rajagopal, P. and Zorman, C. A. and Mehregany, M.}, year={2001}, pages={163–166} }
 @article{davis_gehrke_linthicum_zheleva_preble_rajagopal_zorman_mehregany_2001, title={Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization}, volume={225}, ISSN={["0022-0248"]}, DOI={10.1016/S0022-0248(01)00836-3}, abstractNote={Monocrystalline GaN and AlxGa1−xN films have been grown via the pendeo-epitaxy (PE)1 technique with and without Si3N4 masks on GaN/AlN/6H-SiC(0 0 0 1) and GaN(0 0 0 1)/AlN(0 0 0 1)/3C-SiC(1 1 1)/Si(1 1 1) substrates using organometallic vapor phase deposition. Scanning and transmission electron microscopies were used to evaluate the external microstructures and the distribution of dislocations, respectively. The dislocation densities in the PE grown films were reduced at least five orders of magnitude relative to the initial GaN seed layers. Tilting to 0.2° in the portion of the coalesced GaN epilayers grown over the silicon nitride masks was observed via X-ray diffraction. Neither tilting nor low angle boundaries were observed within areas of coalescence in the material grown on substrates without the masks. The strong, low-temperature PL band-edge peak at 3.45 eV with a FWHM of 17 meV was comparable to that observed in PE GaN films grown on 6H-SiC(0 0 0 1). The band-edge in the GaN grown on AlN(0 0 0 1)/SiC(1 1 1)Si(1 1 1) substrates was shifted to a lower energy by 10 meV, indicative of a greater tensile stress.}, number={2-4}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Davis, RF and Gehrke, T and Linthicum, KJ and Zheleva, TS and Preble, EA and Rajagopal, P and Zorman, CA and Mehregany, M}, year={2001}, month={May}, pages={134–140} }
 @misc{linthicum_gehrke_thomson_carlson_rajagopal_davis_2001, title={Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates}, volume={6,177,688}, number={2001 Jan. 23}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Davis, R. F.}, year={2001} }
 @article{davis_gehrke_linthicum_rajagopal_roskowski_zheleva_preble_zorman_mehregany_schwarz_et al._2001, title={Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates}, volume={6}, number={14}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Davis, R. F. and Gehrke, T. and Linthicum, K. J. and Rajagopal, P. and Roskowski, A. M. and Zheleva, T. and Preble, E. A. and Zorman, C. A. and Mehregany, M. and Schwarz, U. and et al.}, year={2001}, pages={1–16} }
 @article{davis_nam_zheleva_gehrke_linthicum_rajagopal_2000, title={Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films}, volume={338}, number={3}, journal={Materials Science Forum}, author={Davis, R. F. and Nam, O. H. and Zheleva, T. S. and Gehrke, T. and Linthicum, K. J. and Rajagopal, P.}, year={2000}, pages={1471–1476} }
 @article{davis_gehrke_linthicum_zheleva_rajagopal_zorman_mehregany_2000, title={Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates}, volume={5}, number={2000}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Davis, R. F. and Gehrke, T. and Linthicum, K. J. and Zheleva, T. S. and Rajagopal, P. and Zorman, C. A. and Mehregany, M.}, year={2000}, pages={U46–57} }
 @article{gehrke_linthicum_preble_rajagopal_ronning_zorman_mehregany_davis_2000, title={Pendeo-epitaxial growth of gallium nitride on silicon substrates}, volume={29}, ISSN={["0361-5235"]}, DOI={10.1007/s11664-000-0068-6}, number={3}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Gehrke, T and Linthicum, KJ and Preble, E and Rajagopal, P and Ronning, C and Zorman, C and Mehregany, M and Davis, RF}, year={2000}, month={Mar}, pages={306–310} }
 @article{gehrke_linthicum_rajagopal_preble_carlson_robin_davis_2000, title={Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition}, volume={338}, number={3}, journal={Materials Science Forum}, author={Gehrke, T. and Linthicum, K. J. and Rajagopal, P. and Preble, E. A. and Carlson, E. P. and Robin, B. M. and Davis, R. F.}, year={2000}, pages={1491–1494} }
 @article{ronning_hofsass_stotzler_deicher_carlson_hartlieb_gehrke_rajagopal_davis_2000, title={Photoluminescence characterization of Mg implanted GaN}, volume={5}, number={2000}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Ronning, C. and Hofsass, H. and Stotzler, A. and Deicher, M. and Carlson, E. P. and Hartlieb, P. J. and Gehrke, T. and Rajagopal, P. and Davis, R. F.}, year={2000}, pages={U622–628} }
 @article{smith_lampert_rajagopal_banks_thomson_davis_2000, title={Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry}, volume={18}, ISSN={["1520-8559"]}, DOI={10.1116/1.582270}, abstractNote={An alternative method for achieving etching selectivity between GaN and AlN has been demonstrated. The etch rate of AlN was significantly decreased by the addition of a low concentration of O2 to a Cl2–Ar mixture in an inductively coupled plasma (ICP) etching system. The etch rate of GaN in the O2-containing plasma was approximately 15% less than the plasma without the O2 for the same parameters. The pressure and the ICP power were varied to achieve a maximum selectivity of 48 at a pressure of 10 mTorr, a direct current bias of −150 V, and an ICP power of 500 W. The etch rates of GaN and AlN at these parameters were 4800 and 100 Å/min, respectively.}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Smith, SA and Lampert, WV and Rajagopal, P and Banks, AD and Thomson, D and Davis, RF}, year={2000}, pages={879–881} }
 @article{gehrke_linthicum_thomson_rajagopal_batchelor_davis_1999, title={Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate}, volume={4S1}, number={G3.2}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Gehrke, T. and Linthicum, K. J. and Thomson, D. B. and Rajagopal, P. and Batchelor, A. D. and Davis, R. F.}, year={1999} }
 @article{linthicum_gehrke_thomson_carlson_rajagopal_smith_batchelor_davis_1999, title={Pendeo-epitaxy of gallium nitride thin films}, volume={75}, DOI={10.1063/1.124317}, abstractNote={Pendeoepitaxy, a form of selective lateral growth of GaN thin films has been developed using GaN/AlN/6H–SiC(0001) substrates and produced by organometallic vapor phase epitaxy. Selective lateral growth is forced to initiate from the (112̄0) GaN sidewalls of etched GaN seed forms by incorporating a silicon nitride seed mask and employing the SiC substrate as a pseudomask. Coalescence over and between the seed forms was achieved. Transmission electron microscopy revealed that all vertically threading defects stemming from the GaN/AlN and AlN/SiC interfaces are contained within the seed forms and a substantial reduction in the dislocation density of the laterally grown GaN. Atomic force microscopy analysis of the (112̄0) face of discrete pendeoepitaxial structures revealed a root mean square roughness of 0.98 Å. The pendeoepitaxial layer photoluminescence band edge emission peak was observed to be 3.454 eV and is blueshifted by 12 meV as compared to the GaN seed layer.}, number={2}, journal={Applied Physics Letters}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Smith, T. and Batchelor, D. and Davis, R.}, year={1999}, pages={196–198} }
 @misc{zheleva_smith_thomson_linthicum_rajagopal_davis_1999, title={Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films}, volume={28}, number={4}, journal={Journal of Electronic Materials}, author={Zheleva, T. S. and Smith, S. A. and Thomson, D. B. and Linthicum, K. J. and Rajagopal, P. and Davis, R. F.}, year={1999}, pages={L5–8} }
 @article{zheleva_smith_thomson_gehrke_linthicum_rajagopal_carlson_ashmawi_davis_1999, title={Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures}, volume={4S1}, number={G3.38}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Zheleva, T. S. and Smith, S. A. and Thomson, D. B. and Gehrke, T. and Linthicum, K. J. and Rajagopal, P. and Carlson, E. and Ashmawi, W. M. and Davis, R. F.}, year={1999} }
 @article{thomson_gehrke_linthicum_rajagopal_davis_1999, title={Ranges of deposition temperatures applicable for metalorganic vapor phase epitaxy of GaN films via the technique of pendeo- epitaxy}, volume={4S1}, number={G3.37}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Thomson, D. B. and Gehrke, T. and Linthicum, K. J. and Rajagopal, P. and Davis, R. F.}, year={1999} }