Works (48)

2008 patent

Gallium nitride based high-electron mobility devices

Washington, DC: U.S. Patent and Trademark Office.

By: C. Harris, T. Gehrke, T. Weeks & C. Basceri

Source: NC State University Libraries
Added: August 6, 2018

2008 patent

Method of manufacturing gallium nitride based high-electron mobility devices

Washington, DC: U.S. Patent and Trademark Office.

By: C. Harris, T. Gehrke, T. Weeks & C. Basceri

Source: NC State University Libraries
Added: August 6, 2018

2008 patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2008 review

Review of structured thin films in wide bandgap semiconductors: pendeo-epitaxy of GaN and AlGaN

[Review of ]. Journal of Nanophotonics, 2.

By: T. Gehrke

Source: NC State University Libraries
Added: August 6, 2018

2007 patent

Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches

Washington, DC: U.S. Patent and Trademark Office.

By: T. Zheleva, D. Thomson, S. Smith, K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2007 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2006 patent

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 patent

Gallium nitride materials including thermally conductive regions

Washington, DC: U.S. Patent and Trademark Office.

By: R. Borges, K. Linthicum, T. Weeks & T. Gehrke

Source: NC State University Libraries
Added: August 6, 2018

2005 patent

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2005 patent

Second gallium nitride layers that extend into trenches in first gallium nitride layers

Washington, DC: U.S. Patent and Trademark Office.

By: T. Zheleva, D. Thomson, S. Smith, K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2004 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Gallium nitride materials and methods

Washington, DC: U.S. Patent and Trademark Office.

By: T. Weeks, E. Piner, T. Gehrke & K. Linthicum

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Methods of fabricating gallium nitride microelectronic layers on silicon layers

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2003 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum, R. Davis & D. Thomson

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke, D. Thomson, E. Carlson, P. Rajagopal & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 patent

Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates

Journal of Crystal Growth, 231(3), 335–341.

By: R. Davis, T. Gehrke, K. Linthicum, E. Preble, P. Rajagopal, C. Ronning, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke, R. Davis, D. Thomson & K. Tracy

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

By: T. Zheleva, D. Thomson, S. Smith, K. Linthicum, T. Gehrke & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Methods of forming a plurality of semiconductor layers using spaced trench arrays

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehrke, K. Linthicum & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates

Zeitschrift Fur MetallkundeAmerican Journal of Physiology, 92(2), 163–166.

By: R. Davis, T. Gehrke, K. Linthicum, T. Zheleva, P. Rajagopal, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

Journal of Crystal Growth, 225(2-4), 134–140.

By: R. Davis, T. Gehrke, K. Linthicum, T. Zheleva, E. Preble, P. Rajagopal, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates

MRS Internet Journal of Nitride Semiconductor Research, 6(14), 1–16.

By: R. Davis, T. Gehrke, K. Linthicum, P. Rajagopal, A. Roskowski, T. Zheleva, E. Preble, C. Zorman ...

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates

Solid-State Electronics, 44(4), 747–755.

By: H. Liaw, R. Doyle, P. Fejes, S. Zollner, A. Konkar, K. Linthicum, T. Gehrke, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN

Materials Science Forum, 338(3), 1615–1618.

By: A. Suvkhanov, N. Parikh, I. Usov, J. Hunn, S. Withrow, D. Thomson, T. Gehrke, R. Davis, L. Krasnobaev

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery

Journal of Applied Physics, 87(5), 2149–2157.

By: C. Ronning, M. Dalmer, M. Uhrmacher, M. Restle, U. Vetter, L. Ziegeler, H. Hofsass, T. Gehrke, K. Jarrendahl, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films

Materials Science Forum, 338(3), 1471–1476.

By: R. Davis, O. Nam, T. Zheleva, T. Gehrke, K. Linthicum & P. Rajagopal

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U46–57.

By: R. Davis, T. Gehrke, K. Linthicum, T. Zheleva, P. Rajagopal, C. Zorman, M. Mehregany

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Pendeo-epitaxial growth of gallium nitride on silicon substrates

Journal of Electronic Materials, 29(3), 306–310.

By: T. Gehrke, K. Linthicum, E. Preble, P. Rajagopal, C. Ronning, C. Zorman, M. Mehregany, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition

Materials Science Forum, 338(3), 1491–1494.

By: T. Gehrke, K. Linthicum, P. Rajagopal, E. Preble, E. Carlson, B. Robin, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Photoluminescence characterization of Mg implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628.

By: C. Ronning, H. Hofsass, A. Stotzler, M. Deicher, E. Carlson, P. Hartlieb, T. Gehrke, P. Rajagopal, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Characterization of Be-implanted GaN annealed at high temperatures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces

Microelectronic Engineering, 48(1-4), 303–306.

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN

Diamond and Related Materials, 8(2-5), 288–294.

By: A. Hanser, O. Nam, M. Bremser, D. Thomson, T. Gehrke, T. Zheleva, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.2).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy of gallium nitride thin films

Applied Physics Letters, 75(2), 196–198.

By: K. Linthicum, T. Gehrke, D. Thomson, E. Carlson, P. Rajagopal, T. Smith, D. Batchelor, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).

By: K. Linthicum, T. Gehrke, D. Thomson, K. Tracy, E. Carlson, T. Smith, T. Zheleva, C. Zorman, M. Mehregany, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Ranges of deposition temperatures applicable for metalorganic vapor phase epitaxy of GaN films via the technique of pendeo- epitaxy

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.37).

Source: NC State University Libraries
Added: August 6, 2018

1987 patent

Phase difference measurement system

Washington, DC: U.S. Patent and Trademark Office.

By: T. Gehkre

Source: NC State University Libraries
Added: August 6, 2018