@misc{harris_gehrke_weeks_basceri_2008, title={Gallium nitride based high-electron mobility devices}, volume={7,326,971}, number={2008 Feb. 5}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Harris, C. and Gehrke, T. and Weeks, T. W. and Basceri, C.}, year={2008} }
 @misc{harris_gehrke_weeks_basceri_2008, title={Method of manufacturing gallium nitride based high-electron mobility devices}, volume={7,364,988}, number={2008 Apr. 29}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Harris, C. and Gehrke, T. and Weeks, T. W. and Basceri, C.}, year={2008} }
 @misc{linthicum_gehrke_thomson_carlson_rajagopal_davis_2008, title={Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates}, volume={7,378,684}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Davis, R. F.}, year={2008} }
 @misc{gehrke_2008, title={Review of structured thin films in wide bandgap semiconductors: pendeo-epitaxy of GaN and AlGaN}, volume={2}, journal={Journal of Nanophotonics}, author={Gehrke, T.}, year={2008} }
 @misc{zheleva_thomson_smith_linthicum_gehrke_davis_2007, title={Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches}, volume={7,195,993}, number={2007 Mar. 27}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Zheleva, T. and Thomson, D. B. and Smith, S. A. and Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2007} }
 @misc{gehrke_linthicum_davis_2007, title={Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby}, volume={7,217,641}, number={2007 May 15}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gehrke, T. and Linthicum, K. J. and Davis, R. F.}, year={2007} }
 @misc{linthicum_gehrke_davis_2006, title={Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby}, volume={7,095,062}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2006} }
 @misc{borges_linthicum_weeks_gehrke_2005, title={Gallium nitride materials including thermally conductive regions}, volume={6,956,250}, number={2005 Oct. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Borges, R. and Linthicum, K. J. and Weeks, T. W. and Gehrke, T.}, year={2005} }
 @misc{linthicum_gehrke_davis_2005, title={Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts}, volume={6,864,160}, number={2005 Mar. 8}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2005} }
 @misc{zheleva_thomson_smith_linthicum_gehrke_davis_2005, title={Second gallium nitride layers that extend into trenches in first gallium nitride layers}, volume={6,897,483}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Zheleva, T. and Thomson, D. B. and Smith, S. A. and Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2005} }
 @misc{gehrke_linthicum_davis_2004, title={Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby}, volume={6,686,261}, number={2004 Feb. 3}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gehrke, T. and Linthicum, K. J. and Davis, R. F.}, year={2004} }
 @misc{weeks_piner_gehrke_linthicum_2003, title={Gallium nitride materials and methods}, volume={6,649,287}, number={2003 Nov. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Weeks, T. W. and Piner, E. L. and Gehrke, T. and Linthicum, K. J.}, year={2003} }
 @misc{linthicum_gehrke_davis_2003, title={Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts}, volume={6,586,778}, number={2003 July 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2003} }
 @misc{linthicum_gehrke_davis_thomson_tracy_2003, title={Methods of fabricating gallium nitride microelectronic layers on silicon layers}, volume={6,602,764}, number={2003 Aug. 5}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Davis, R. F. and Thomson, D. B. and Tracy, K. M.}, year={2003} }
 @misc{linthicum_gehrke_davis_2003, title={Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby}, volume={6,621,148}, number={2003 Sept. 16}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2003} }
 @misc{gehrke_linthicum_davis_2003, title={Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates}, volume={6,521,514}, number={2003 Feb. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gehrke, T. and Linthicum, K. J. and Davis, R. F.}, year={2003} }
 @misc{gehrke_linthicum_davis_2003, title={Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby}, volume={6,545,300}, number={2003 Apr. 8}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gehrke, T. and Linthicum, K. J. and Davis, R. F.}, year={2003} }
 @misc{gehrke_linthicum_davis_thomson_2002, title={High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates}, volume={6,489,221}, number={2002 Dec. 3}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gehrke, T. and Linthicum, K. J. and Davis, R. F. and Thomson, D. B.}, year={2002} }
 @misc{linthicum_gehrke_davis_2002, title={Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts}, volume={6,403,451}, number={2002 Jun. 11}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2002} }
 @misc{gehrke_linthicum_davis_2002, title={Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed thereby}, volume={6,486,042}, number={2002 Nov. 26}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gehrke, T. and Linthicum, K. J. and Davis, R. F.}, year={2002} }
 @misc{linthicum_gehrke_thomson_carlson_rajagopal_davis_2002, title={Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates}, volume={6,462,355}, number={2002 Oct. 8}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Davis, R. F.}, year={2002} }
 @misc{linthicum_gehrke_thomson_carlson_rajagopal_davis_2002, title={Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby}, volume={6,376,339}, number={2002 Apr. 23}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Davis, R. F.}, year={2002} }
 @misc{linthicum_gehrke_davis_2002, title={Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby}, volume={6,380,108}, number={2002 Apr. 30}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2002} }
 @article{davis_gehrke_linthicum_preble_rajagopal_ronning_zorman_mehregany_2001, title={Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates}, volume={231}, ISSN={["1873-5002"]}, DOI={10.1016/S0022-0248(01)01462-2}, abstractNote={Single-crystal wurtzitic GaN(0 0 0 1) films have been grown via conventional methods on high-temperature AlN(0 0 0 1) buffer layers previously deposited on 3C-SiC(1 1 1)/Si(1 1 1) substrates using metal organic vapor phase epitaxy (MOVPE). Formation of the 3C-SiC transition layer employed a carburization step and the subsequent deposition of epitaxial 3C-SiC(1 1 1) on the Si(1 1 1) surface using atmospheric pressure chemical vapor deposition (APCVD) for both processes. Similar films, except with significantly reduced dislocation densities, have been grown via pendeo-epitaxy (PE) from the (112̄0) sidewalls of silicon nitride masked, raised, rectangular, and [11̄00] oriented GaN stripes etched from films conventionally grown on similarly prepared, Si-based, multilayer substrates. The FWHM of the (0 0 0 2) X-ray diffraction peak of the conventionally grown GaN was 1443 arcsec. The FWHM of the photoluminescence (PL) spectra for the near band-edge emission on these films was 19 meV. Tilting in the coalesced PE-grown GaN epilayers of 0.2° was confined to the areas of lateral overgrowth over the masks; no tilting was observed in the material suspended above the trenches. The strong, low-temperature PL band-edge peak at 3.456 eV with an FWHM of 17 meV in the PE films was comparable to that observed in PE GaN films grown on AlN/6H-SiC(0 0 0 1) substrates.}, number={3}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Davis, RF and Gehrke, T and Linthicum, KJ and Preble, E and Rajagopal, P and Ronning, C and Zorman, C and Mehregany, M}, year={2001}, month={Oct}, pages={335–341} }
 @misc{linthicum_gehrke_davis_thomson_tracy_2001, title={Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby}, volume={6,255,198}, number={2001 July 3}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Davis, R. F. and Thomson, D. B. and Tracy, K. M.}, year={2001} }
 @misc{zheleva_thomson_smith_linthicum_gehrke_davis_2001, title={Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby}, volume={6,265,289}, number={2001 July 24}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Zheleva, T. and Thomson, D. B. and Smith, S. A. and Linthicum, K. J. and Gehrke, T. and Davis, R. F.}, year={2001} }
 @misc{gehrke_linthicum_davis_2001, title={Methods of forming a plurality of semiconductor layers using spaced trench arrays}, volume={6,261,929}, number={2001 July 17}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gehrke, T. and Linthicum, K. J. and Davis, R. F.}, year={2001} }
 @article{davis_gehrke_linthicum_zheleva_rajagopal_zorman_mehregany_2001, title={Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates}, volume={92}, number={2}, journal={Zeitschrift fur MetallkundeAmerican Journal of Physiology}, author={Davis, R. F. and Gehrke, T. and Linthicum, K. J. and Zheleva, T. S. and Rajagopal, P. and Zorman, C. A. and Mehregany, M.}, year={2001}, pages={163–166} }
 @article{davis_gehrke_linthicum_zheleva_preble_rajagopal_zorman_mehregany_2001, title={Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization}, volume={225}, ISSN={["0022-0248"]}, DOI={10.1016/S0022-0248(01)00836-3}, abstractNote={Monocrystalline GaN and AlxGa1−xN films have been grown via the pendeo-epitaxy (PE)1 technique with and without Si3N4 masks on GaN/AlN/6H-SiC(0 0 0 1) and GaN(0 0 0 1)/AlN(0 0 0 1)/3C-SiC(1 1 1)/Si(1 1 1) substrates using organometallic vapor phase deposition. Scanning and transmission electron microscopies were used to evaluate the external microstructures and the distribution of dislocations, respectively. The dislocation densities in the PE grown films were reduced at least five orders of magnitude relative to the initial GaN seed layers. Tilting to 0.2° in the portion of the coalesced GaN epilayers grown over the silicon nitride masks was observed via X-ray diffraction. Neither tilting nor low angle boundaries were observed within areas of coalescence in the material grown on substrates without the masks. The strong, low-temperature PL band-edge peak at 3.45 eV with a FWHM of 17 meV was comparable to that observed in PE GaN films grown on 6H-SiC(0 0 0 1). The band-edge in the GaN grown on AlN(0 0 0 1)/SiC(1 1 1)Si(1 1 1) substrates was shifted to a lower energy by 10 meV, indicative of a greater tensile stress.}, number={2-4}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Davis, RF and Gehrke, T and Linthicum, KJ and Zheleva, TS and Preble, EA and Rajagopal, P and Zorman, CA and Mehregany, M}, year={2001}, month={May}, pages={134–140} }
 @misc{linthicum_gehrke_thomson_carlson_rajagopal_davis_2001, title={Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates}, volume={6,177,688}, number={2001 Jan. 23}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Davis, R. F.}, year={2001} }
 @article{davis_gehrke_linthicum_rajagopal_roskowski_zheleva_preble_zorman_mehregany_schwarz_et al._2001, title={Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates}, volume={6}, number={14}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Davis, R. F. and Gehrke, T. and Linthicum, K. J. and Rajagopal, P. and Roskowski, A. M. and Zheleva, T. and Preble, E. A. and Zorman, C. A. and Mehregany, M. and Schwarz, U. and et al.}, year={2001}, pages={1–16} }
 @article{liaw_doyle_fejes_zollner_konkar_linthicum_gehrke_davis_2000, title={Crystallinity and microstructures of aluminum nitride films deposited on Si(111) substrates}, volume={44}, ISSN={["1879-2405"]}, DOI={10.1016/S0038-1101(99)00307-X}, abstractNote={The crystallinity and microstructures of MOCVD AlN films deposited on Si(111) substrates with and without a buffer layer(s) were determined. The buffer layers were a thin 3C–SiC(111) layer produced via conversion of a Si(111) surface and a film stack consisting of graded-AlxGa1−xN/GaN/3C–SiC. A randomly oriented polycrystalline AlN film was obtained when this material was deposited directly on the Si(111). The use of a buffer layer led to the growth and coalescence of highly oriented AlN films produced by the coalescence of grains having average misalignments along the c-axis of 1.8° and that on the c-plane of 3.3°. The grains exhibited strongly faceted tips. The 2H–AlN(0001) films grown on a 3C–SiC(111) buffer layers showed adequate crystal perfection for use as a template for growth of single-crystal GaN and/or AlxGa1−xN films.}, number={4}, journal={SOLID-STATE ELECTRONICS}, author={Liaw, HM and Doyle, R and Fejes, PL and Zollner, S and Konkar, A and Linthicum, KJ and Gehrke, T and Davis, RF}, year={2000}, month={Apr}, pages={747–755} }
 @article{suvkhanov_parikh_usov_hunn_withrow_thomson_gehrke_davis_krasnobaev_2000, title={Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN}, volume={338}, number={3}, journal={Materials Science Forum}, author={Suvkhanov, A. and Parikh, N. and Usov, I. and Hunn, J. and Withrow, S. and Thomson, D. and Gehrke, T. and Davis, R. F. and Krasnobaev, L. Y.}, year={2000}, pages={1615–1618} }
 @article{ronning_dalmer_uhrmacher_restle_vetter_ziegeler_hofsass_gehrke_jarrendahl_davis_2000, title={Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery}, volume={87}, ISSN={["1089-7550"]}, DOI={10.1063/1.372154}, abstractNote={The recovery of structural defects in gallium nitride (GaN) and aluminum nitride (AlN) after implantation of In+111 and Sr+89 in the dose range (0.1–3) 1013 cm−2 and ion energies of 60–400 keV has been investigated as a function of annealing temperature with emission channeling (EC) and perturbed γγ angular correlation spectroscopy. The implanted In and Sr atoms occupied substitutional sites in heavily perturbed surroundings of point defects after room temperature implantation. No amorphization of the lattice structure was observed. The point defects could be partly removed after annealing to 1473 K for 10–30 min. Lattice site occupation of implanted light alkalis, Na+24 in GaN and AlN as well as Li+8 in AlN, were also determined by EC as a function of implantation and annealing temperature. These atoms occupied mainly interstitial sites at room temperature. Lithium diffusion and the occupation of substitutional sites was observed in GaN and AlN at implantation temperatures above 700 K. A lattice site change was also observed for sodium in AlN, but not in GaN after annealing to 1073 K for 10 min.}, number={5}, journal={JOURNAL OF APPLIED PHYSICS}, author={Ronning, C and Dalmer, M and Uhrmacher, M and Restle, M and Vetter, U and Ziegeler, L and Hofsass, H and Gehrke, T and Jarrendahl, K and Davis, RF}, year={2000}, month={Mar}, pages={2149–2157} }
 @article{davis_nam_zheleva_gehrke_linthicum_rajagopal_2000, title={Lateral- and pendeo-epitaxial growth and defect reduction in GaN thin films}, volume={338}, number={3}, journal={Materials Science Forum}, author={Davis, R. F. and Nam, O. H. and Zheleva, T. S. and Gehrke, T. and Linthicum, K. J. and Rajagopal, P.}, year={2000}, pages={1471–1476} }
 @article{davis_gehrke_linthicum_zheleva_rajagopal_zorman_mehregany_2000, title={Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates}, volume={5}, number={2000}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Davis, R. F. and Gehrke, T. and Linthicum, K. J. and Zheleva, T. S. and Rajagopal, P. and Zorman, C. A. and Mehregany, M.}, year={2000}, pages={U46–57} }
 @article{gehrke_linthicum_preble_rajagopal_ronning_zorman_mehregany_davis_2000, title={Pendeo-epitaxial growth of gallium nitride on silicon substrates}, volume={29}, ISSN={["0361-5235"]}, DOI={10.1007/s11664-000-0068-6}, number={3}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Gehrke, T and Linthicum, KJ and Preble, E and Rajagopal, P and Ronning, C and Zorman, C and Mehregany, M and Davis, RF}, year={2000}, month={Mar}, pages={306–310} }
 @article{gehrke_linthicum_rajagopal_preble_carlson_robin_davis_2000, title={Pendeo-epitaxy (TM) process for aluminum gallium nitride thin films on silicon carbide substrates via metalorganic chemical vapor deposition}, volume={338}, number={3}, journal={Materials Science Forum}, author={Gehrke, T. and Linthicum, K. J. and Rajagopal, P. and Preble, E. A. and Carlson, E. P. and Robin, B. M. and Davis, R. F.}, year={2000}, pages={1491–1494} }
 @article{ronning_hofsass_stotzler_deicher_carlson_hartlieb_gehrke_rajagopal_davis_2000, title={Photoluminescence characterization of Mg implanted GaN}, volume={5}, number={2000}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Ronning, C. and Hofsass, H. and Stotzler, A. and Deicher, M. and Carlson, E. P. and Hartlieb, P. J. and Gehrke, T. and Rajagopal, P. and Davis, R. F.}, year={2000}, pages={U622–628} }
 @article{ronning_linthicum_carlson_hartlieb_thomson_gehrke_davis_1999, title={Characterization of Be-implanted GaN annealed at high temperatures}, volume={4S1}, number={G3.17}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Ronning, C. and Linthicum, K. J. and Carlson, E. P. and Hartlieb, P. J. and Thomson, D. B. and Gehrke, T. and Davis, R. F.}, year={1999} }
 @article{therrien_niimi_gehrke_lucovsky_davis_1999, title={Charge redistribution at GaN-Ga2O3 interfaces: A microscopic mechanism for low defect density interfaces in remote plasma processed MOS devices prepared on polar GaN faces}, volume={48}, ISSN={["0167-9317"]}, DOI={10.1016/s0167-9317(99)00394-9}, abstractNote={Abstract Interfacial defect densities are typically two orders of magnitude higher at [III–V]-dielectric interfaces than at SiSiO 2 interfaces. This paper demonstrates GaN devices with significantly reduced interfacial defect densities using a two step remote plasma process to form the GaN-dielectric interface and then deposit the dielectric film. Separate plasma oxidation and deposition steps have previously been used for fabrication of aggressively scaled Si devices. Essentially the same 300°C remote plasma processing has been applied to GaN metal-oxide semiconductor (MOS) capacitors and field effect transistors (FETs). This paper i) discusses the low temperature plasma process for GaN device fabrication, ii) briefly reviews GaN device performance, and then iii) presents a chemical bonding model that provides a basis for the improved interface electrical properties.}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Therrien, R and Niimi, H and Gehrke, T and Lucovsky, G and Davis, R}, year={1999}, month={Sep}, pages={303–306} }
 @article{hanser_nam_bremser_thomson_gehrke_zheleva_davis_1999, title={Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN}, volume={8}, ISSN={["1879-0062"]}, DOI={10.1016/S0925-9635(98)00341-0}, abstractNote={Advancements in the doping of GaN and AlxGa1−xN thin films, and the growth of GaN and AlxGa1−xN structures on patterned heterostructure substrates via metalorganic vapor phase epitaxy are reported. The acceptor-type behavior of Mg-doped GaN films grown in N2 diluents is presented. Net ionized impurity concentrations up to 8×1018 cm−3 and Hall mobilities up to ≈14 cm2 V−1 s−1 were measured for Mg-doped films grown in N2 in the as-grown condition. Donor and acceptor doping of AlxGa1−xN alloys was performed. Acceptor doping of AlxGa1−xN for x≤0.13 and donor doping for x≤0.58 were achieved for films deposited at 1100 °C. Lateral epitaxial overgrowth of GaN and AlxGa1−xN layers was investigated. The growth and coalescence of GaN and AlxGa1−xN stripes patterned in SiO2 and/or SiNx masks deposited on GaN, including aligned second lateral epitaxial overgrowth on initial laterally overgrown GaN layers, are discussed.}, number={2-5}, journal={DIAMOND AND RELATED MATERIALS}, author={Hanser, AD and Nam, OH and Bremser, MD and Thomson, DB and Gehrke, T and Zheleva, TS and Davis, RF}, year={1999}, month={Mar}, pages={288–294} }
 @article{gehrke_linthicum_thomson_rajagopal_batchelor_davis_1999, title={Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate}, volume={4S1}, number={G3.2}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Gehrke, T. and Linthicum, K. J. and Thomson, D. B. and Rajagopal, P. and Batchelor, A. D. and Davis, R. F.}, year={1999} }
 @article{linthicum_gehrke_thomson_carlson_rajagopal_smith_batchelor_davis_1999, title={Pendeo-epitaxy of gallium nitride thin films}, volume={75}, DOI={10.1063/1.124317}, abstractNote={Pendeoepitaxy, a form of selective lateral growth of GaN thin films has been developed using GaN/AlN/6H–SiC(0001) substrates and produced by organometallic vapor phase epitaxy. Selective lateral growth is forced to initiate from the (112̄0) GaN sidewalls of etched GaN seed forms by incorporating a silicon nitride seed mask and employing the SiC substrate as a pseudomask. Coalescence over and between the seed forms was achieved. Transmission electron microscopy revealed that all vertically threading defects stemming from the GaN/AlN and AlN/SiC interfaces are contained within the seed forms and a substantial reduction in the dislocation density of the laterally grown GaN. Atomic force microscopy analysis of the (112̄0) face of discrete pendeoepitaxial structures revealed a root mean square roughness of 0.98 Å. The pendeoepitaxial layer photoluminescence band edge emission peak was observed to be 3.454 eV and is blueshifted by 12 meV as compared to the GaN seed layer.}, number={2}, journal={Applied Physics Letters}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Carlson, E. P. and Rajagopal, P. and Smith, T. and Batchelor, D. and Davis, R.}, year={1999}, pages={196–198} }
 @article{zheleva_smith_thomson_gehrke_linthicum_rajagopal_carlson_ashmawi_davis_1999, title={Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures}, volume={4S1}, number={G3.38}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Zheleva, T. S. and Smith, S. A. and Thomson, D. B. and Gehrke, T. and Linthicum, K. J. and Rajagopal, P. and Carlson, E. and Ashmawi, W. M. and Davis, R. F.}, year={1999} }
 @article{linthicum_gehrke_thomson_tracy_carlson_smith_zheleva_zorman_mehregany_davis_1999, title={Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques}, volume={4S1}, number={G4.9}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Linthicum, K. J. and Gehrke, T. and Thomson, D. B. and Tracy, K. M. and Carlson, E. P. and Smith, T. P. and Zheleva, T. S. and Zorman, C. A. and Mehregany, M. and Davis, R. F.}, year={1999} }
 @article{thomson_gehrke_linthicum_rajagopal_davis_1999, title={Ranges of deposition temperatures applicable for metalorganic vapor phase epitaxy of GaN films via the technique of pendeo- epitaxy}, volume={4S1}, number={G3.37}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Thomson, D. B. and Gehrke, T. and Linthicum, K. J. and Rajagopal, P. and Davis, R. F.}, year={1999} }
 @misc{gehkre_1987, title={Phase difference measurement system}, volume={4,675,614}, number={1987 Jun. 23}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gehkre, T. E.}, year={1987} }