Philip J. Hartlieb

Works (8)

Updated: April 11th, 2023 10:13
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2004 journal article

In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces

JOURNAL OF APPLIED PHYSICS, 95(10), 5856–5864.

By: B. Coppa, C. Fulton, P. Hartlieb, R. Davis, B. Rodriguez, B. Shields  n, R. Nemanich

Source: Web Of Science
Added: August 6, 2018

2003 journal article

Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

JOURNAL OF APPLIED PHYSICS, 94(6), 3939–3948.

By: K. Tracy, P. Hartlieb, S. Einfeldt, R. Davis, E. Hurt & R. Nemanich

Source: Web Of Science
Added: August 6, 2018

2003 journal article

Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy

JOURNAL OF CRYSTAL GROWTH, 257(3-4), 255–262.

By: T. Smith, W. Mecouch, P. Miraglia, A. Roskowski, P. Hartlieb & R. Davis

author keywords: crystal morphology; dislocations; stacking faults; x-ray diffraction; organometallic vapor phase deposition; ZnO
Source: Web Of Science
Added: August 6, 2018

2003 article

Response to "Comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 91, 732 (2002)]"

Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2003, March 15). JOURNAL OF APPLIED PHYSICS, Vol. 93, pp. 3679–3679.

By: P. Hartlieb, A. Roskowski, R. Davis, W. Platow & R. Nemanich

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN

JOURNAL OF APPLIED PHYSICS, 91(11), 9151–9160.

By: P. Hartlieb, A. Roskowski, R. Davis & R. Nemanich

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces

JOURNAL OF APPLIED PHYSICS, 91(2), 732–738.

By: P. Hartlieb, A. Roskowski, R. Davis, W. Platow & R. Nemanich

Source: Web Of Science
Added: August 6, 2018

2000 journal article

Photoluminescence characterization of Mg implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628.

By: C. Ronning, H. Hofsass, A. Stotzler, M. Deicher, E. Carlson, P. Hartlieb, T. Gehrke, P. Rajagopal, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Characterization of Be-implanted GaN annealed at high temperatures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).

By: C. Ronning, K. Linthicum, E. Carlson, P. Hartlieb, D. Thomson, T. Gehrke, R. Davis

Source: NC State University Libraries
Added: August 6, 2018