Works (8)

Updated: July 5th, 2023 16:00

2004 journal article

In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces

JOURNAL OF APPLIED PHYSICS, 95(10), 5856โ€“5864.

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

JOURNAL OF APPLIED PHYSICS, 94(6), 3939โ€“3948.

By: K. Tracy n, P. Hartlieb n, S. Einfeldt n, R. Davis n, E. Hurt n & R. Nemanich n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

2003 journal article

Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy

JOURNAL OF CRYSTAL GROWTH, 257(3-4), 255โ€“262.

By: T. Smith n, W. Mecouch n, P. Miraglia n, A. Roskowski n, P. Hartlieb n & R. Davis n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
author keywords: crystal morphology; dislocations; stacking faults; x-ray diffraction; organometallic vapor phase deposition; ZnO
Source: Web Of Science
Added: August 6, 2018

2003 article

Response to "Comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 91, 732 (2002)]"

Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2003, March 15). JOURNAL OF APPLIED PHYSICS, Vol. 93, pp. 3679โ€“3679.

By: P. Hartlieb n, A. Roskowski n, R. Davis n, W. Platow n & R. Nemanich n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN

JOURNAL OF APPLIED PHYSICS, 91(11), 9151โ€“9160.

By: P. Hartlieb n, A. Roskowski n, R. Davis n & R. Nemanich n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces

JOURNAL OF APPLIED PHYSICS, 91(2), 732โ€“738.

By: P. Hartlieb n, A. Roskowski n, R. Davis n, W. Platow n & R. Nemanich n

co-author countries: United States of America ๐Ÿ‡บ๐Ÿ‡ธ
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Photoluminescence characterization of Mg implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622โ€“628.

By: C. Ronning, H. Hofsass, A. Stotzler, M. Deicher, E. Carlson, P. Hartlieb, T. Gehrke, P. Rajagopal, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Characterization of Be-implanted GaN annealed at high temperatures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).

Source: NC State University Libraries
Added: August 6, 2018

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