Philip J. Hartlieb

Works (8)

Updated: July 5th, 2023 16:00

2004 article

In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces

Coppa, B. J., Fulton, C. C., Hartlieb, P. J., Davis, R. F., Rodriguez, B. J., Shields, B. J., & Nemanich, R. J. (2004, April 29). Journal of Applied Physics.

By: B. Coppa n, C. Fulton n, P. Hartlieb n, R. Davis n, B. Rodriguez n, B. Shields  n, R. Nemanich n

topics (OpenAlex): ZnO doping and properties; Gas Sensing Nanomaterials and Sensors; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

2003 article

Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

Tracy, K. M., Hartlieb, P. J., Einfeldt, S., Davis, R. F., Hurt, E. H., & Nemanich, R. J. (2003, September 15). Journal of Applied Physics.

By: K. Tracy n, P. Hartlieb n, S. Einfeldt n, R. Davis n, E. Hurt n & R. Nemanich n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and interfaces
Source: Web Of Science
Added: August 6, 2018

2003 article

Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy

Smith, T. P., Mecouch, W. J., Miraglia, P. Q., Roskowski, A. M., Hartlieb, P. J., & Davis, R. F. (2003, September 3). Journal of Crystal Growth.

By: T. Smith n, W. Mecouch n, P. Miraglia n, A. Roskowski n, P. Hartlieb n & R. Davis n

author keywords: crystal morphology; dislocations; stacking faults; x-ray diffraction; organometallic vapor phase deposition; ZnO
topics (OpenAlex): ZnO doping and properties; Ga2O3 and related materials; GaN-based semiconductor devices and materials
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Source: Web Of Science
Added: August 6, 2018

2003 article

Response to Comment on ‘Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces’ [J. Appl. Phys. 91, 732 (2002)]

Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2003, March 5). Journal of Applied Physics.

By: P. Hartlieb n, A. Roskowski n, R. Davis n, W. Platow n & R. Nemanich n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

2002 article

Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN

Hartlieb, P. J., Roskowski, A., Davis, R. F., & Nemanich, R. J. (2002, June 1). Journal of Applied Physics.

By: P. Hartlieb n, A. Roskowski n, R. Davis n & R. Nemanich n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Source: Web Of Science
Added: August 6, 2018

2002 article

Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces

Hartlieb, P. J., Roskowski, A., Davis, R. F., Platow, W., & Nemanich, R. J. (2002, January 15). Journal of Applied Physics.

By: P. Hartlieb n, A. Roskowski n, R. Davis n, W. Platow n & R. Nemanich n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Photoluminescence characterization of Mg implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628.

By: C. Ronning, H. Hofsass, A. Stotzler, M. Deicher, E. Carlson, P. Hartlieb, T. Gehrke, P. Rajagopal, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Characterization of Be-implanted GaN annealed at high temperatures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).

By: C. Ronning, K. Linthicum, E. Carlson, P. Hartlieb, D. Thomson, T. Gehrke, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

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