Works (8)

2004 journal article

In situ cleaning and characterization of oxygen- and zinc-terminated, n-type, ZnO{0001} surfaces

Journal of Applied Physics, 95(10), 5856–5864.

By: B. Coppa, C. Fulton, P. Hartlieb, R. Davis, B. Rodriguez, B. Shields, R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

Journal of Applied Physics, 94(6), 3939–3948.

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy

Journal of Crystal Growth, 257(3/4), 255–262.

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Response to 'Comment on 'Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces' [J. Appl. Phys. 91, 732 (2002)]'

Journal of Applied Physics, 93(6), 3679.

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN

Journal of Applied Physics, 91(11), 9151–9160.

By: P. Hartlieb, A. Roskowski, R. Davis & R. Nemanich

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces

Journal of Applied Physics, 91(2), 732–738.

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Photoluminescence characterization of Mg implanted GaN

MRS Internet Journal of Nitride Semiconductor Research, 5(2000), U622–628.

By: C. Ronning, H. Hofsass, A. Stotzler, M. Deicher, E. Carlson, P. Hartlieb, T. Gehrke, P. Rajagopal, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Characterization of Be-implanted GaN annealed at high temperatures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.17).

Source: NC State University Libraries
Added: August 6, 2018