2003 journal article
Characterization of hydrogen etched 6h-sic(0001) substrates and subsequently grown AlN films
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 21(2), 394–400.
2003 journal article
Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag
Journal of Applied Physics, 94(6), 3939–3948.
2003 journal article
Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)
Journal of Applied Physics, 93(7), 3995–4004.
2003 patent
Methods of fabricating gallium nitride microelectronic layers on silicon layers
Washington, DC: U.S. Patent and Trademark Office.
2003 journal article
Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)
Journal of Applied Physics, 94(5), 3163–3172.
2002 journal article
Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor- cleaned GaN thin films
Journal of Applied Physics, 91(4), 2133–2137.
2001 journal article
Formation of cobalt disilicide films on (root 3 x root 3)6H-SiC(0001) - art. no. 115312
Physical Review. B, Condensed Matter and Materials Physics, 6311(11), 5312.
2001 patent
Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
Washington, DC: U.S. Patent and Trademark Office.
2000 journal article
Schottky barrier height and electron affinity of titanium on AIN
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2082–2087.
1999 journal article
Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).