Works (10)

Updated: April 11th, 2023 10:13

2003 journal article

Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AlN films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(2), 394–400.

Source: Web Of Science
Added: August 6, 2018

2003 journal article

Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

JOURNAL OF APPLIED PHYSICS, 94(6), 3939–3948.

Source: Web Of Science
Added: August 6, 2018

2003 journal article

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

JOURNAL OF APPLIED PHYSICS, 93(7), 3995–4004.

Source: Web Of Science
Added: August 6, 2018

2003 patent

Methods of fabricating gallium nitride microelectronic layers on silicon layers

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2003 journal article

Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)

JOURNAL OF APPLIED PHYSICS, 94(5), 3163–3172.

By: K. Tracy, W. Mecouch, R. Davis & R. Nemanich

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films

JOURNAL OF APPLIED PHYSICS, 91(4), 2133–2137.

By: E. Preble, K. Tracy, S. Kiesel n, H. McLean n, P. Miraglia, R. Nemanich, R. Davis, M. Albrecht*, D. Smith*

Source: Web Of Science
Added: August 6, 2018

2001 journal article

Formation of cobalt disilicide films on (root 3 x root 3)6H-SiC(0001)

PHYSICAL REVIEW B, 63(11).

Source: Web Of Science
Added: August 6, 2018

2001 patent

Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke, R. Davis, D. Thomson & K. Tracy

Source: NC State University Libraries
Added: August 6, 2018

2000 article

Schottky barrier height and electron affinity of titanium on AIN

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 2082–2087.

By: B. Ward, J. Hartman, E. Hurt n, K. Tracy, R. Davis & R. Nemanich

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).

By: K. Linthicum, T. Gehrke, D. Thomson, K. Tracy, E. Carlson, T. Smith, T. Zheleva, C. Zorman, M. Mehregany, R. Davis

Source: NC State University Libraries
Added: August 6, 2018