Kieran M. Tracy

Characterization of hydrogen etched 6h-sic(0001) substrates and subsequently grown AlN films

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 21(2), 394–400.

Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

Journal of Applied Physics, 94(6), 3939–3948.

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

Journal of Applied Physics, 93(7), 3995–4004.

Methods of fabricating gallium nitride microelectronic layers on silicon layers

Washington, DC: U.S. Patent and Trademark Office.

Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)

Journal of Applied Physics, 94(5), 3163–3172.

Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor- cleaned GaN thin films

Journal of Applied Physics, 91(4), 2133–2137.

Formation of cobalt disilicide films on (root 3 x root 3)6H-SiC(0001) - art. no. 115312

Physical Review. B, Condensed Matter and Materials Physics, 6311(11), 5312.

Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby

Washington, DC: U.S. Patent and Trademark Office.

Schottky barrier height and electron affinity of titanium on AIN

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2082–2087.

Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).