Kieran M. Tracy

Characterization of hydrogen etched 6H-SiC(0001) substrates and subsequently grown AlN films

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(2), 394–400.

Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

JOURNAL OF APPLIED PHYSICS, 94(6), 3939–3948.

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

JOURNAL OF APPLIED PHYSICS, 93(7), 3995–4004.

Methods of fabricating gallium nitride microelectronic layers on silicon layers

Washington, DC: U.S. Patent and Trademark Office.

Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)

JOURNAL OF APPLIED PHYSICS, 94(5), 3163–3172.

Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films

JOURNAL OF APPLIED PHYSICS, 91(4), 2133–2137.

Formation of cobalt disilicide films on (root 3 x root 3)6H-SiC(0001)

PHYSICAL REVIEW B, 63(11).

Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby

Washington, DC: U.S. Patent and Trademark Office.

Schottky barrier height and electron affinity of titanium on AIN

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 2082–2087.

Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).