Kieran M. Tracy

Works (10)

Updated: July 5th, 2023 16:01

2003 article

Characterization of hydrogen etched 6H–SiC(0001) substrates and subsequently grown AlN films

Hartman, J. D., Roskowski, A. M., Reitmeier, Z. J., Tracy, K. M., Davis, R. F., & Nemanich, R. J. (2003, February 5). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

By: J. Hartman n, A. Roskowski n, Z. Reitmeier n, K. Tracy n, R. Davis n & R. Nemanich n

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Semiconductor materials and devices; GaN-based semiconductor devices and materials
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UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2003 article

Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

Tracy, K. M., Hartlieb, P. J., Einfeldt, S., Davis, R. F., Hurt, E. H., & Nemanich, R. J. (2003, September 15). Journal of Applied Physics.

By: K. Tracy n, P. Hartlieb n, S. Einfeldt n, R. Davis n, E. Hurt n & R. Nemanich n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and interfaces
Source: Web Of Science
Added: August 6, 2018

2003 article

Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001)

Cook, T. E., Fulton, C. C., Mecouch, W. J., Tracy, K. M., Davis, R. F., Hurt, E. H., … Nemanich, R. J. (2003, March 27). Journal of Applied Physics.

By: T. Cook n, C. Fulton n, W. Mecouch n, K. Tracy n, R. Davis n, E. Hurt n, G. Lucovsky n, R. Nemanich n

topics (OpenAlex): Semiconductor materials and devices; GaN-based semiconductor devices and materials; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

2003 patent

Methods of fabricating gallium nitride microelectronic layers on silicon layers

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke, R. Davis, D. Thomson & K. Tracy

Source: NC State University Libraries
Added: August 6, 2018

2003 article

Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)

Tracy, K. M., Mecouch, W. J., Davis, R. F., & Nemanich, R. J. (2003, August 21). Journal of Applied Physics.

By: K. Tracy n, W. Mecouch n, R. Davis n & R. Nemanich n

topics (OpenAlex): GaN-based semiconductor devices and materials; Photocathodes and Microchannel Plates; Ga2O3 and related materials
Source: Web Of Science
Added: August 6, 2018

2002 article

Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films

Preble, E. A., Tracy, K. M., Kiesel, S., McLean, H., Miraglia, P. Q., Nemanich, R. J., … Smith, D. J. (2002, February 15). Journal of Applied Physics.

By: E. Preble n, K. Tracy n, S. Kiesel n, H. McLean n, P. Miraglia n, R. Nemanich n, R. Davis n, M. Albrecht *, D. Smith *

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Source: Web Of Science
Added: August 6, 2018

2001 article

Formation of cobalt disilicide films on(3×3)6H−SiC(0001)

Platow, W., Wood, D. K., Tracy, K. M., Burnette, J. E., Nemanich, R. J., & Sayers, D. E. (2001, March 1). Physical Review. B, Condensed Matter.

By: W. Platow n, D. Wood n, K. Tracy n, J. Burnette n, R. Nemanich n & D. Sayers n

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Semiconductor materials and interfaces; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2001 patent

Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby

Washington, DC: U.S. Patent and Trademark Office.

By: K. Linthicum, T. Gehrke, R. Davis, D. Thomson & K. Tracy

Source: NC State University Libraries
Added: August 6, 2018

2000 article

Schottky barrier height and electron affinity of titanium on AlN

Ward, B. L., Hartman, J. D., Hurt, E. H., Tracy, K. M., Davis, R. F., & Nemanich, R. J. (2000, July 1). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena.

By: B. Ward n, J. Hartman n, E. Hurt n, K. Tracy n, R. Davis n & R. Nemanich n

topics (OpenAlex): Metal and Thin Film Mechanics; Semiconductor materials and devices; Silicon Carbide Semiconductor Technologies
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Process routes for low defect-density GaN on various substrates employing pendeo-epitaxial growth techniques

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.9).

By: K. Linthicum, T. Gehrke, D. Thomson, K. Tracy, E. Carlson, T. Smith, T. Zheleva, C. Zorman, M. Mehregany, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

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