2008 journal article
Electrical and photoelectrical characterization of undoped and S-doped nanocrystalline diamond films
Journal of Applied Physics, 103(8).
2006 journal article
Electron emission microscopy of nano-crystal graphitic films as high current density electron sources
Diamond and Related Materials, 15(4-8), 875–879.
2006 journal article
Emission characterization from nitrogen-doped diamond with respect to energy conversion
Diamond and Related Materials, 15(2-3), 217–220.
2006 journal article
Field penetration and its contribution to field enhanced thermionic electron emission from nanocrystalline diamond films
Diamond and Related Materials, 15(11-12), 2006–2009.
2006 journal article
Photo and field electron emission microscopy, from sulfur doped nanocrystalline diamond films
Diamond and Related Materials, 15(4-8), 880–883.
2005 journal article
Field enhanced thermionic electron emission from sulfur doped nanocrystalline diamond films
Diamond and Related Materials, 14(07-Mar), 704–708.
2005 journal article
High negative ion yield from light molecule scattering
Nuclear Instruments & Methods in Physics Research. Section B, Beam Interactions With Materials and Atoms, 230(Apr-05), 330–339.
2005 journal article
Sulfur doped nanocrystalline diamond films as field enhancement based thermionic emitters and their role in energy conversion
Diamond and Related Materials, 14(12-Nov), 2051–2054.
2005 journal article
Thermionic field emission from nanocrystalline diamond-coated silicon tip arrays
Physical Review, 72(16).
2004 journal article
Experimental studies of the formation process and morphologies of carbon nanotubes with bamboo mode structures
Diamond and Related Materials, 13(08-Apr), 1287–1291.
2004 journal article
On the thermionic emission from nitrogen-doped diamond films with respect to energy conversion
Diamond and Related Materials, 13(12-Nov), 2052–2055.
2002 journal article
Enhanced low-temperature thermionic field emission from surface-treated N-doped diamond films
Diamond and Related Materials, 11(3-6), 774–779.
1999 journal article
A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).