Peter Q. Miraglia

Works (14)

Updated: July 5th, 2023 16:02

2003 article

Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on A1N and A10.2Ga0.8N buffer layers

Preble, E. A., Miraglia, P. Q., Roskowski, A. M., Vetter, W. M., Dudley, M., & Davis, R. F. (2003, September 12). Journal of Crystal Growth.

By: E. Preble n, P. Miraglia n, A. Roskowski n, W. Vetter*, M. Dudley * & R. Davis n

author keywords: characterization; defects; X-ray diffraction; metalorganic vapor phase epitaxy; nitrides; semiconducting silicon compounds
topics (OpenAlex): GaN-based semiconductor devices and materials; Silicon Carbide Semiconductor Technologies; Metal and Thin Film Mechanics
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UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2003 article

Electron energy distribution during high-field transport in AlN

Collazo, R., Schlesser, R., Roskowski, A., Miraglia, P., Davis, R. F., & Sitar, Z. (2003, March 1). Journal of Applied Physics, Vol. 93, pp. 2765–2771.

By: R. Collazo n , R. Schlesser n, A. Roskowski n, P. Miraglia n, R. Davis n & Z. Sitar n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Silicon Carbide Semiconductor Technologies
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2003 article

Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy

Smith, T. P., Mecouch, W. J., Miraglia, P. Q., Roskowski, A. M., Hartlieb, P. J., & Davis, R. F. (2003, September 3). Journal of Crystal Growth.

By: T. Smith n, W. Mecouch n, P. Miraglia n, A. Roskowski n, P. Hartlieb n & R. Davis n

author keywords: crystal morphology; dislocations; stacking faults; x-ray diffraction; organometallic vapor phase deposition; ZnO
topics (OpenAlex): ZnO doping and properties; Ga2O3 and related materials; GaN-based semiconductor devices and materials
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2003 article

Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures

Miraglia, P. Q., Preble, E. A., Roskowski, A. M., Einfeldt, S., & Davis, R. F. (2003, May 13). Journal of Crystal Growth.

By: P. Miraglia*, E. Preble n, A. Roskowski n, S. Einfeldt n & R. Davis n

author keywords: atomic force microscopy; growth models; line defects; surface defects; metalorganic vapor phase epitaxy; gallium nitride
topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

2003 article

Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures

Miraglia, P. Q., Preble, E. A., Roskowski, A. M., Einfeldt, S., Lim, S. H., Liliental-Weber, Z., & Davis, R. F. (2003, June 21). Thin Solid Films.

By: P. Miraglia*, E. Preble n, A. Roskowski n, S. Einfeldt*, S. Lim*, Z. Liliental-Weber *, R. Davis n

author keywords: surface defects; atomic force microscopy; metalorganic vapor phase epitaxy; indium gallium nitride
topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Semiconductor materials and devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2002 article

Application of Nomarski interference contrast microscopy as a thickness monitor in the preparation of transparent, SiC-based, cross-sectional TEM samples

Preble, E. A., McLean, H. A., Kiesel, S. M., Miraglia, P., Albrecht, M., & Davis, R. F. (2002, August 1). Ultramicroscopy.

By: E. Preble n, H. McLean n, S. Kiesel n, P. Miraglia n, M. Albrecht * & R. Davis n

author keywords: Nomarski; transmission electron microscopy; silicon carbide; transparent samples
topics (OpenAlex): Integrated Circuits and Semiconductor Failure Analysis; Advanced Electron Microscopy Techniques and Applications; Electron and X-Ray Spectroscopy Techniques
TL;DR: Reflected light optical microscopy using a Nomarski prism and a differential interference contrast filter have been employed in concert to achieve a technique that provides an accurate color reference for thickness during the dimpling and ion milling of transparent transmission electron microscopy samples of 6H-SiC(000 1) wafers. (via Semantic Scholar)
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UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

2002 article

Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films

Preble, E. A., Tracy, K. M., Kiesel, S., McLean, H., Miraglia, P. Q., Nemanich, R. J., … Smith, D. J. (2002, February 15). Journal of Applied Physics.

By: E. Preble n, K. Tracy n, S. Kiesel n, H. McLean n, P. Miraglia n, R. Nemanich n, R. Davis n, M. Albrecht *, D. Smith *

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Source: Web Of Science
Added: August 6, 2018

2002 article

Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio

Shin, H., Arkun, E., Thomson, D. B., Miraglia, P., Preble, E., Schlesser, R., … Davis, R. F. (2002, March 1). Journal of Crystal Growth.

By: H. Shin n, E. Arkun n, D. Thomson n, P. Miraglia n, E. Preble n, R. Schlesser n, S. Wolter n, Z. Sitar n, R. Davis n

author keywords: decomposition; growth from vapor; single crystal growth; gallium compounds; nitrides semi-conducting III-V materials
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

2002 article

Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002, August 1). IEEE Journal of Quantum Electronics.

By: A. Roskowski n, E. Preble n, S. Einfeldt n, P. Miraglia n & R. Davis n

author keywords: chemical vapor deposition; semiconductor growth; thin films; topography
topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

2002 journal article

Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy

Opto-Electronics Review, 10(4), 261–270.

By: A. Roskowski, E. Preble, S. Einfeldt, P. Miraglia, J. Schuck, R. Grober, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2002 article

Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE

Roskowski, A. M., Miraglia, P. Q., Preble, E. A., Einfeldt, S., & Davis, R. F. (2002, May 1). Journal of Crystal Growth.

By: A. Roskowski n, P. Miraglia n, E. Preble n, S. Einfeldt n & R. Davis n

author keywords: characterization; defects; surface structure; metalorganic vapor phase epitaxy; pendeoepitaxy; semiconducting gallium compounds
topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Metal and Thin Film Mechanics
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2001 article

Polarization charges and polarization-induced barriers in AlxGa1−xN/GaN and InyGa1−yN/GaN heterostructures

Jia, L., Yu, E. T., Keogh, D., Asbeck, P. M., Miraglia, P., Roskowski, A., & Davis, R. F. (2001, October 29). Applied Physics Letters.

By: L. Jia *, E. Yu *, D. Keogh*, P. Asbeck *, P. Miraglia n, A. Roskowski n, R. Davis n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Source: Web Of Science
Added: August 6, 2018

2001 article

Strain and Dislocation Reduction in Maskless Pendeo-Epitaxy GaN Thin Films

Roskowski, A. M., Miraglia, P. Q., Preble, E. A., Einfeldt, S., Stiles, T., Davis, R. F., … Schwarz, U. (2001, December 1). Physica Status Solidi (a), Vol. 188, pp. 729–732.

By: A. Roskowski n, P. Miraglia n, E. Preble n, S. Einfeldt  n, T. Stiles  n, R. Davis n, J. Schuck*, R. Grober*, U. Schwarz *

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; ZnO doping and properties
Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

1999 article

Characterization of gradients in mechanical properties of SA-533B steel welds using ball indentation

Murty, K. L., Miraglia, P. Q., Mathew, M. D., Shah, V. N., & Haggag, F. M. (1999, May 1). International Journal of Pressure Vessels and Piping.

By: K. Murty n, P. Miraglia n, M. Mathew n, V. Shah* & F. Haggag*

author keywords: steel welds; automated ball indentation; stress-strain behavior; energy to fracture
topics (OpenAlex): Metal and Thin Film Mechanics; Advanced machining processes and optimization; Metal Alloys Wear and Properties
Source: Web Of Science
Added: August 6, 2018

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