Works (14)
Updated: July 5th, 2023 16:02
2003 journal article
Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers
JOURNAL OF CRYSTAL GROWTH, 258(1-2), 75–83.
author keywords: characterization; defects; X-ray diffraction; metalorganic vapor phase epitaxy; nitrides; semiconducting silicon compounds
UN Sustainable Development Goal Categories
14. Life Below Water
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2003 journal article
Electron energy distribution during high-field transport in AlN
JOURNAL OF APPLIED PHYSICS, 93(5), 2765–2771.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
2003 journal article
Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy
JOURNAL OF CRYSTAL GROWTH, 257(3-4), 255–262.
author keywords: crystal morphology; dislocations; stacking faults; x-ray diffraction; organometallic vapor phase deposition; ZnO
UN Sustainable Development Goal Categories
14. Life Below Water
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2003 journal article
Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures
JOURNAL OF CRYSTAL GROWTH, 253(1-4), 16–25.
author keywords: atomic force microscopy; growth models; line defects; surface defects; metalorganic vapor phase epitaxy; gallium nitride
Source: Web Of Science
Added: August 6, 2018
2003 journal article
Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures
THIN SOLID FILMS, 437(1-2), 140–149.
author keywords: surface defects; atomic force microscopy; metalorganic vapor phase epitaxy; indium gallium nitride
UN Sustainable Development Goal Categories
14. Life Below Water
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2002 journal article
Application of Nomarski interference contrast microscopy as a thickness monitor in the preparation of transparent, SiG-based, cross-sectional TEM samples
ULTRAMICROSCOPY, 92(3-4), 265–271.
author keywords: Nomarski; transmission electron microscopy; silicon carbide; transparent samples
TL;DR:
Reflected light optical microscopy using a Nomarski prism and a differential interference contrast filter have been employed in concert to achieve a technique that provides an accurate color reference for thickness during the dimpling and ion milling of transparent transmission electron microscopy samples of 6H-SiC(000 1) wafers.
(via Semantic Scholar)
UN Sustainable Development Goal Categories
3. Good Health and Well-being
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2002 journal article
Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films
JOURNAL OF APPLIED PHYSICS, 91(4), 2133–2137.
Source: Web Of Science
Added: August 6, 2018
2002 journal article
Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio
JOURNAL OF CRYSTAL GROWTH, 236(4), 529–537.
author keywords: decomposition; growth from vapor; single crystal growth; gallium compounds; nitrides semi-conducting III-V materials
Source: Web Of Science
Added: August 6, 2018
2002 journal article
Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence
IEEE JOURNAL OF QUANTUM ELECTRONICS, 38(8), 1006–1016.
author keywords: chemical vapor deposition; semiconductor growth; thin films; topography
Source: Web Of Science
Added: August 6, 2018
2002 journal article
Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy
Opto-Electronics Review, 10(4), 261–270.
Source: NC State University Libraries
Added: August 6, 2018
2002 journal article
Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE
JOURNAL OF CRYSTAL GROWTH, 241(1-2), 141–150.
author keywords: characterization; defects; surface structure; metalorganic vapor phase epitaxy; pendeoepitaxy; semiconducting gallium compounds
UN Sustainable Development Goal Categories
14. Life Below Water
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
2001 journal article
Polarization charges and polarization-induced barriers in AlxGa1-xN/GaN and InyGa1-yN/GaN heterostructures
APPLIED PHYSICS LETTERS, 79(18), 2916–2918.
Source: Web Of Science
Added: August 6, 2018
2001 journal article
Strain and dislocation reduction in maskless pendeo-epitaxy GaN thin films
Physica Status Solidi. A, Applications and Materials Science, 188(2), 729–732.
Source: NC State University Libraries
Added: August 6, 2018
1999 journal article
Characterization of gradients in mechanical properties of SA-533B steel welds using ball indentation
INTERNATIONAL JOURNAL OF PRESSURE VESSELS AND PIPING, 76(6), 361–369.
author keywords: steel welds; automated ball indentation; stress-strain behavior; energy to fracture
Source: Web Of Science
Added: August 6, 2018
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