Peter Q. Miraglia

Preble, E. A., Miraglia, P. Q., Roskowski, A. M., Vetter, W. M., Dudley, M., & Davis, R. F. (2003). Domain structures in 6H-SiC wafers and their effect on the microstructures of GaN films grown on AlN and Al0.2Ga0.8N buffer layers. JOURNAL OF CRYSTAL GROWTH, 258(1-2), 75–83. https://doi.org/10.1016/S0022-0248(03)01515-X

Collazo, R., Schlesser, R., Roskowski, A., Miraglia, P., Davis, R. F., & Sitar, Z. (2003). Electron energy distribution during high-field transport in AlN. JOURNAL OF APPLIED PHYSICS, 93(5), 2765–2771. https://doi.org/10.1063/1.1543633

Smith, T. P., Mecouch, W. J., Miraglia, P. Q., Roskowski, A. M., Hartlieb, P. J., & Davis, R. F. (2003). Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy. JOURNAL OF CRYSTAL GROWTH, 257(3-4), 255–262. https://doi.org/10.1016/S0022-0248(03)01469-6

Miraglia, P. Q., Preble, E. A., Roskowski, A. M., Einfeldt, S., & Davis, R. F. (2003). Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures. JOURNAL OF CRYSTAL GROWTH, 253(1-4), 16–25. https://doi.org/10.1016/S0022-0248(03)00970-9

Miraglia, P. Q., Preble, E. A., Roskowski, A. M., Einfeldt, S., Lim, S. H., Liliental-Weber, Z., & Davis, R. F. (2003). Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures. THIN SOLID FILMS, 437(1-2), 140–149. https://doi.org/10.1016/S0040-6090(03)00611-4

Preble, E. A., McLean, H. A., Kiesel, S. M., Miraglia, P., Albrecht, M., & Davis, R. F. (2002). Application of Nomarski interference contrast microscopy as a thickness monitor in the preparation of transparent, SiG-based, cross-sectional TEM samples. ULTRAMICROSCOPY, 92(3-4), 265–271. https://doi.org/10.1016/S0304-3991(02)00142-0

Preble, E. A., Tracy, K. M., Kiesel, S., McLean, H., Miraglia, P. Q., Nemanich, R. J., … Smith, D. J. (2002). Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films. JOURNAL OF APPLIED PHYSICS, 91(4), 2133–2137. https://doi.org/10.1063/1.1432127

Shin, H., Arkun, E., Thomson, D. B., Miraglia, P., Preble, E., Schlesser, R., … Davis, R. F. (2002). Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio. JOURNAL OF CRYSTAL GROWTH, 236(4), 529–537. https://doi.org/10.1016/S0022-0248(02)00825-4

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., & Davis, R. F. (2002). Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence. IEEE JOURNAL OF QUANTUM ELECTRONICS, 38(8), 1006–1016. https://doi.org/10.1109/JQE.2002.801005

Roskowski, A. M., Preble, E. A., Einfeldt, S., Miraglia, P. M., Schuck, J., Grober, R., & Davis, R. F. (2002). Reduction in dislocation density and strain in GaN thin films grown via maskless pendeo-epitaxy. Opto-Electronics Review, 10(4), 261–270.

Roskowski, A. M., Miraglia, P. Q., Preble, E. A., Einfeldt, S., & Davis, R. F. (2002). Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE. JOURNAL OF CRYSTAL GROWTH, 241(1-2), 141–150. https://doi.org/10.1016/S0022-0248(02)00943-0

Jia, L., Yu, E. T., Keogh, D., Asbeck, P. M., Miraglia, P., Roskowski, A., & Davis, R. F. (2001). Polarization charges and polarization-induced barriers in AlxGa1-xN/GaN and InyGa1-yN/GaN heterostructures. APPLIED PHYSICS LETTERS, 79(18), 2916–2918. https://doi.org/10.1063/1.1412594

Roskowski, A. M., Miraglia, P. Q., Preble, E. A., Einfeldt, S., Stiles, T., Davis, R. F., … Schwarz, U. (2001). Strain and dislocation reduction in maskless pendeo-epitaxy GaN thin films. Physica Status Solidi. A, Applications and Materials Science, 188(2), 729–732. https://doi.org/10.1002/1521-396x(200112)188:2<729::aid-pssa729>3.0.co;2-w

Murty, K. L., Miraglia, P. Q., Mathew, M. D., Shah, V. N., & Haggag, F. M. (1999). Characterization of gradients in mechanical properties of SA-533B steel welds using ball indentation. INTERNATIONAL JOURNAL OF PRESSURE VESSELS AND PIPING, 76(6), 361–369. https://doi.org/10.1016/S0308-0161(99)00006-X