@article{akouala_kumar_punugupati_reynolds_reynolds_mily_maria_narayan_hunte_2019, title={Planar Hall effect and anisotropic magnetoresistance in semiconducting and conducting oxide thin films}, volume={125}, ISSN={0947-8396 1432-0630}, url={http://dx.doi.org/10.1007/S00339-019-2592-Y}, DOI={10.1007/s00339-019-2592-y}, number={5}, journal={Applied Physics A}, publisher={Springer Science and Business Media LLC}, author={Akouala, Christer R. and Kumar, Raj and Punugupati, Sandhyarani and Reynolds, C. Lewis and Reynolds, Judith G. and Mily, Edward J. and Maria, Jon-Paul and Narayan, Jagdish and Hunte, Frank}, year={2019}, month={Apr} }
 @article{singamaneni_punugupati_prater_narayan_2016, title={Diamagnetism to ferromagnetism in Sr-substituted epitaxial BaTiO3 thin films}, volume={108}, number={14}, journal={Applied Physics Letters}, author={Singamaneni, S. R. and Punugupati, S. and Prater, J. T. and Narayan, J.}, year={2016} }
 @article{punugupati_kumar_nori_hunte_narayan_2016, title={Structural, magnetic and magnetotransport properties of bi-epitaxial La0.7Sr0.3MnO3 (110) thin films integrated on Si (001)}, volume={106}, ISSN={["1873-2453"]}, DOI={10.1016/j.actamat.2015.12.054}, abstractNote={We report the growth of bi-epitaxial La0.7Sr0.3MnO3 (110) thin films on Si (001) substrate with cubic yttria stabilized zirconia (c-YSZ)/SrTiO3 (STO) buffer layers by pulsed laser deposition. The La0.7Sr0.3MnO3 and STO thin films were grown with a single [110] out-of-plane orientation and with two in-plane domain variants, which is confirmed by XRD and detailed TEM studies. The growth of STO on c-YSZ can be explained by the paradigm of domain matching epitaxy. The epitaxial relationship between STO and c-YSZ can be written as [110] (001) c-YSZ ‖ [1¯11¯] (110) STO (or) [110] (001) c-YSZ ‖ [1¯12¯] (110) STO. The La0.7Sr0.3MnO3 thin films are ferromagnetic with Curie temperature 324 K and showed metal to insulator transition at 285 K. The La0.7Sr0.3MnO3 thin films showed hysteresis loops in magnetoresistance when magnetic field is applied along both in-plane (110) and out-of-plane [110] directions. The highest magnetoresistance obtained in this study is −32% at 50 K and 50 kOe for in-plane configuration, whereas the room-temperature magnetoresistance is −4% at 10 kOe and −17% at 50 kOe. The hysteresis in the magnetoresistance and the controlled domain boundaries in bi-epitaxial La0.7Sr0.3MnO3 films integrated on Si can offer significant advantages over the polycrystalline counterparts.}, journal={ACTA MATERIALIA}, author={Punugupati, Sandhyarani and Kumar, Raj and Nori, Sudhakar and Hunte, Frank and Narayan, Jagdish}, year={2016}, month={Mar}, pages={40–47} }
 @article{punugupati_narayan_hunte_2015, title={Room temperature ferromagnetism in epitaxial Cr2O3 thin films grown on r-sapphire}, volume={117}, number={19}, journal={Journal of Applied Physics}, author={Punugupati, S. and Narayan, J. and Hunte, F.}, year={2015} }
 @misc{lee_punugupati_wu_jin_narayan_schwartz_2014, title={Evidence for topological surface states in epitaxial Bi2Se3 thin film grown by pulsed laser deposition through magneto-transport measurements}, volume={18}, ISSN={["1879-0348"]}, DOI={10.1016/j.cossms.2014.07.001}, abstractNote={We report epitaxial growth via domain matching epitaxy of Bi2Se3 thin films on Al2O3 (0 0 0 1) substrates with over 13% lattice misfit and critical thickness less than one monolayer. X-ray and electron diffraction patterns confirm that the layers are epitaxial with (0 0 0 1) Bi2Se3 || (0 0 0 1) Al2O3 and [21¯1¯0] Bi2Se3 || [21¯1¯0] Al2O3 (or) [21¯1¯0] Bi2Se3 || [112¯0] Al2O3 without the presence of an interfacial pseudomorphic layer. X-ray photoemission spectroscopy reveals that the films are Se-deficient, in agreement with electrical transport data showing n-type carriers and metallic behavior. Magneto-resistance (MR) measurements show a cusp feature corresponding to weak antilocalization and linear-MR shows a non-saturating trend up to 9 T. These results suggest topological surface states in PLD-grown Bi2Se3 films.}, number={5}, journal={CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE}, author={Lee, Y. F. and Punugupati, S. and Wu, F. and Jin, Z. and Narayan, J. and Schwartz, J.}, year={2014}, month={Oct}, pages={279–285} }
 @article{punugupati_narayan_hunte_2014, title={Strain induced ferromagnetism in epitaxial Cr2O3 thin films integrated on Si(001)}, volume={105}, ISSN={0003-6951 1077-3118}, url={http://dx.doi.org/10.1063/1.4896975}, DOI={10.1063/1.4896975}, abstractNote={We report on the epitaxial growth and magnetic properties of antiferromagnetic and magnetoelectric (ME) Cr2O3 thin films deposited on cubic yttria stabilized zirconia (c-YSZ)/Si(001) using pulsed laser deposition. The X-ray diffraction (2ϴ and Φ) and TEM characterizations confirm that the films were grown epitaxially. The Cr2O3(0001) growth on YSZ(001) occurs with twin domains. There are four domains of Cr2O3 with in-plane rotation of 30° or 150° from each other about the [0001] growth direction. The epitaxial relation between the layers is given as [001]Si ‖ [001]YSZ ‖ [0001]Cr2O3 and [100]Si ǁ [100]YSZ ǁ [101¯0] Cr2O3 or [112¯0] Cr2O3. Though the bulk Cr2O3 is an antiferromagnetic with TN = 307 K, we found that the films exhibit ferromagnetic like hysteresis loops with high saturation and finite coercive field up to 400 K. The thickness dependent magnetizations together with oxygen annealing results suggest that the ferromagnetism (FM) is due to oxygen related defects whose concentration is controlled by strain present in the films. This FM, in addition to the intrinsic magneto-electric properties of Cr2O3, opens the door to relevant spintronics applications.}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Punugupati, Sandhyarani and Narayan, Jagdish and Hunte, Frank}, year={2014}, month={Sep}, pages={132401} }
 @article{punugupati_temizer_narayan_hunte_2014, title={Structural and resistance switching properties of epitaxial Pt/ZnO/TiN/Si(001) heterostructures}, volume={115}, number={23}, journal={Journal of Applied Physics}, author={Punugupati, S. and Temizer, N. K. and Narayan, J. and Hunte, F.}, year={2014} }