1999 article

Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2

Guha, S., Bojarczuk, N. A., Johnson, M. A. L., & Schetzina, J. F. (1999, July 26). Applied Physics Letters.

By: S. Guha*, N. Bojarczuk*, M. Johnson n & J. Schetzina n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Metal and Thin Film Mechanics
Source: Web Of Science
Added: August 6, 2018

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