@article{guha_bojarczuk_johnson_schetzina_1999, title={Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on Si/SiO2}, volume={75}, ISSN={["0003-6951"]}, DOI={10.1063/1.124409}, abstractNote={We demonstrate the selective area growth of gallium nitride on patterned Si(111)/GaN/SiO2 wafers by metalorganic molecular beam epitaxy using triethyl gallium as a Ga source. We show that such selective area deposition may be used to grow isolated microcolumns of GaN with lateral dimensions of tens of nanometers on Si/SiO2 wafers. Via high resolution cathodoluminescence imaging we show that such microcolumn structures are highly luminescent inspite of a large surface to volume ratio, indicating that nonradiative recombination at free surfaces is not a significant issue in this system.}, number={4}, journal={APPLIED PHYSICS LETTERS}, author={Guha, S and Bojarczuk, NA and Johnson, MAL and Schetzina, JF}, year={1999}, month={Jul}, pages={463–465} }