Indranil De

Osburn, C. M., De, I., Yee, K. F., & Srivastava, A. (2000). Design and integration considerations for end-of-the roadmap ultrashallow junctions. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 338–345. https://doi.org/10.1116/1.591195

De, I., Johri, D., Srivastava, A., & Osburn, C. M. (2000). Impact of gate workfunction on device performance at the 50 nm technology node. SOLID-STATE ELECTRONICS, 44(6), 1077–1080. https://doi.org/10.1016/S0038-1101(99)00323-8

Ahmed, K., De, I., Osburn, C., Wortman, J., & Hauser, J. (2000). Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of L-eff and R-sd of LDD MOSFET's. IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(4), 891–895. https://doi.org/10.1109/16.831010

De, I., & Osburn, C. M. (1999). Impact of super-steep-retrograde channel doping profiles on the performance of scaled devices. IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(8), 1711–1717. https://doi.org/10.1109/16.777161