2006 journal article
Influence of oxygen diffusion through capping layers of low work function metal gate electrodes
IEEE ELECTRON DEVICE LETTERS, 27(4), 228–230.
2005 journal article
Electrical characteristics of HfO2 dielectrics with Ru metal gate electrodes
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 152(9), F138–F141.
2002 journal article
Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS
IEEE ELECTRON DEVICE LETTERS, 23(6), 354–356.
2001 journal article
Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices
APPLIED PHYSICS LETTERS, 79(7), 973–975.
1999 journal article
Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836–1839.
Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.
Certain data included herein are derived from the Web of Science© and InCites© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.