Works (5)

Updated: July 5th, 2023 16:00

2006 journal article

Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

IEEE ELECTRON DEVICE LETTERS, 27(4), 228–230.

By: B. Chen n, R. Jha n, H. Lazar n, N. Biswas n, J. Lee n, B. Lee n, L. Wielunski*, E. Garfunkel*, V. Misra n

co-author countries: United States of America 🇺🇸
author keywords: alloy; capping; effective work function; metal gate; MoTa; oxygen diffusion
Sources: Web Of Science, ORCID
Added: August 6, 2018

2005 journal article

Electrical characteristics of HfO2 dielectrics with Ru metal gate electrodes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 152(9), F138–F141.

By: Y. Suh n, H. Lazar n, B. Chen n, J. Lee n & V. Misra n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2002 journal article

Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS

IEEE ELECTRON DEVICE LETTERS, 23(6), 354–356.

By: V. Misra n, H. Zhong n & H. Lazar n

co-author countries: United States of America 🇺🇸
author keywords: advanced gatestacks; CMOS; gate electrodes; metal alloy; metal gates; MOS transistors; Ru, Ru-Ta, Ta
Sources: Web Of Science, ORCID
Added: August 6, 2018

2001 journal article

Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices

APPLIED PHYSICS LETTERS, 79(7), 973–975.

By: H. Lazar n, V. Misra n, R. Johnson n & G. Lucovsky n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

1999 journal article

Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836–1839.

By: V. Misra, H. Lazar, Z. Wang, Y. Wu, H. Niimi, G. Lucovsky, J. Wortman, J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

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