@article{chen_jha_lazar_biswas_lee_lee_wielunski_garfunkel_misra_2006, title={Influence of oxygen diffusion through capping layers of low work function metal gate electrodes}, volume={27}, ISSN={["1558-0563"]}, DOI={10.1109/LED.2006.871184}, abstractNote={This letter evaluates Ru and W capping layers for MoTa metal gate electrodes in MOS capacitor applications. The authors report that the oxygen diffusion from the capping layer plays an important role in determining the MoTa alloy effective work function value on SiO/sub 2/. A MoTa alloy metal gate with Ru capping exhibits stable effective work function up to 900/spl deg/C annealing but is not stable with W capping. Auger electron spectroscopy and Rutherford backscattering spectroscopy analyses show minimal oxygen diffusion into MoTa gate stacks with Ru capping while severe oxygen diffusion into the gate is observed with W capping metal after 900/spl deg/C annealing. Current-voltage analysis also demonstrates different barrier heights of MoTa on SiO/sub 2/ with Ru or W capping layer after 900/spl deg/C annealing, confirming the effective work function value change.}, number={4}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Chen, B and Jha, R and Lazar, H and Biswas, N and Lee, J and Lee, B and Wielunski, L and Garfunkel, E and Misra, V}, year={2006}, month={Apr}, pages={228–230} }
 @article{suh_lazar_chen_lee_misra_2005, title={Electrical characteristics of HfO2 dielectrics with Ru metal gate electrodes}, volume={152}, ISSN={["1945-7111"]}, DOI={10.1149/1.1992467}, abstractNote={Hafnium dioxide, HfO 2 , thin films were prepared by radio frequency magnetron sputtering of thin hafnium layers, followed by an oxidation process. Ru was deposited on the HfO 2 as the gate electrode. An equivalent oxide thickness of 12.5 A was obtained in Ru/HfO 2 /n-Si metal oxide semiconductor (MOS) capacitor with a low leakage current density of 1.7 × 10 - 2 A/cm 2 at Vg - V F B = 1 V in accumulation. The work function of Ru gate extracted from capacitance-voltage analysis was 5.02 eV, suggesting Ru has the appropriate work function for p-MOSFETs. Using the conductance method, a high interface state density of 1.3 X 10 1 3 eV - 1 cm - 2 from the conduction band edge to the near midgap of Si was obtained in Ru/HfO 2 /n-Si MOS, compared to low interface density level of ∼ 10 1 1 eV - 1 cm - 2 in p + poly Si/SiO 2 /n-Si MOS. To evaluate the thermal stability, the samples were subjected to a rapid thermal anneal in an argon ambient up to 900°C. The electrical characteristics of Ru/HfO 2 /n-Si MOS capacitor are discussed in detail with post-metal annealing temperatures.}, number={9}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Suh, YS and Lazar, H and Chen, B and Lee, JH and Misra, V}, year={2005}, pages={F138–F141} }
 @article{misra_zhong_lazar_2002, title={Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS}, volume={23}, ISSN={["0741-3106"]}, DOI={10.1109/LED.2002.1004233}, abstractNote={In this letter, low resistivity Ru and Ru-Ta alloy films, deposited via reactive sputtering, were evaluated as gate electrodes for p- and n-MOSFET devices, respectively. MOSFETs fabricated via a conventional process flow indicated that the work functions of Ru and Ru-Ta alloys were compatible with p- and n-MOSFET devices, respectively. Both of the metal gated devices eliminated gate depletion effects. Good MOSFET characteristics, such as I/sub DS/-V/sub GS/ and mobility, were obtained for both Ru-gated PMOSFETs and Ru-Ta gated NMOSFETs.}, number={6}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Misra, V and Zhong, HC and Lazar, H}, year={2002}, month={Jun}, pages={354–356} }
 @article{lazar_misra_johnson_lucovsky_2001, title={Characteristics of metalorganic remote plasma chemical vapor deposited Al2O3 gate stacks on SiC metal-oxide-semiconductor devices}, volume={79}, ISSN={["1077-3118"]}, DOI={10.1063/1.1392973}, abstractNote={Metalorganic remote plasma chemical vapor deposited SiO2/Al2O3 stacks were deposited on 6H p-type silicon SiC to fabricate a high-k gate stack SiC metal–oxide–semiconductor capacitors. Capacitance–voltage (C–V) and current–voltage (I–V) measurements were performed. C–V characteristics showed excellent properties at room and higher temperatures. Samples exhibited a slight negative flatband shift from which the net oxide charge (Qox) was calculated. Low leakage currents were observed even at high temperatures. I–V characteristics of Al2O3 were superior to those observed on AlN and SiO2 dielectrics on SiC.}, number={7}, journal={APPLIED PHYSICS LETTERS}, author={Lazar, HR and Misra, V and Johnson, RS and Lucovsky, G}, year={2001}, month={Aug}, pages={973–975} }
 @article{misra_lazar_wang_wu_niimi_lucovsky_wortman_hauser_1999, title={Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition}, volume={17}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Misra, V. and Lazar, H. and Wang, Z. and Wu, Y. and Niimi, H. and Lucovsky, G. and Wortman, J. J. and Hauser, J. R.}, year={1999}, pages={1836–1839} }