Chia-Wei Teng

Park, M., Sakhrani, V., Maria, J. P., Cuomo, J. J., Teng, C. W., Muth, J. F., … Nemanich, R. J. (2003). Wavelength-dependent Raman scattering of hydrogenated amorphous silicon carbon with red, green, and blue light excitation. JOURNAL OF MATERIALS RESEARCH, 18(4), 768–771. https://doi.org/10.1557/JMR.2003.0106

Park, M., Teng, C. W., Sakhrani, V., McLaurin, M. B., Kolbas, R. M., Sanwald, R. C., … Cuomo, J. J. (2001). Optical characterization of wide band gap amorphous semiconductors (a-Si : C : H): Effect of hydrogen dilution. JOURNAL OF APPLIED PHYSICS, 89(2), 1130–1137. https://doi.org/10.1063/1.1332421

Teng, C. W., Aboelfotoh, M. O., Davis, R. F., Muth, J. F., & Kolbas, R. M. (2001). Photoluminescence and electrical characteristics of the two-dimensional electron gas in Si delta-doped GaN layers. APPLIED PHYSICS LETTERS, 78(12), 1688–1690. https://doi.org/10.1063/1.1353836

Teng, C. W., Muth, J. F., Kolbas, R. M., Hassan, K. M., Sharma, A. K., Kvit, A., & Narayan, J. (2000). Quantum confinement of E-1 and E-2 transitions in Ge quantum dots embedded in an Al2O3 or an AlN matrix. APPLIED PHYSICS LETTERS, 76(1), 43–45. https://doi.org/10.1063/1.125650

Teng, C. W., Muth, J. F., Kolbas, R. M., Hassan, K. M., Sharma, A. K., & Narayan, J. (2000). Quantum confinement of E1 and E2 transitions in Ge quantum dots embedded in Al203 or an AlN matrix. In T. S. J. Piqueras & M. S. Unlu (Eds.), Optical microstructural characterization of semiconductors  (Materials Research Society proceedings, vol. 588). Pittsburgh, Pa.: Materials Research Society.

Teng, C. W., Muth, J. F., Ozgur, U., Bergmann, M. J., Everitt, H. O., Sharma, A. K., … Narayan, J. (2000). Refractive indices and absorption coefficients of MgxZn1-xO alloys. APPLIED PHYSICS LETTERS, 76(8), 979–981. https://doi.org/10.1063/1.125912

Hassan, K. M., Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., & Kolbas, R. M. (2000). Size effect in germanium nanostructures fabricated by pulsed laser deposition. In S. K. H. Hahn & J. C. Parker (Eds.), Nanophase and Nanocomposite Materials III  (Materials Research Society proceedings; vol. 581). Pittsburgh, Pa.: Materials Research Society.

Sharma, A. K., Jin, C., Narayan, J., Teng, C. W., Muth, J. F., Kolbas, R. M., & Holland, O. W. (2000). Structural and optical property investigations on Mg-Alloying in epitaxial zinc oxide films on sapphire. MRS Internet Journal of Nitride Semiconductor Research, (2000).

Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., Jin, C., Kvit, A., … Holland, O. W. (1999). Optical and structural properties of epitaxial MgxZn1-xO alloys. APPLIED PHYSICS LETTERS, 75(21), 3327–3329. https://doi.org/10.1063/1.125340

Hassan, K. M., Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., & Kolbas, R. M. (1999). Optical and structural studies of Ge nanocrystals embedded in AlN matrix fabricated by pulsed laser deposition. APPLIED PHYSICS LETTERS, 75(9), 1222–1224. https://doi.org/10.1063/1.124648

Teng, C. W., Muth, J. F., Kolbas, R. M., Hassan, K. M., Sharma, A. K., Kvit, A., & Narayan, J. (1999). Quantum confinement of above-band-bap transitions in Ge quantum dots embedded in an Al2O3 or AIN matrix. In T. S. J. Piqueras & M. S. Unlu (Eds.), Optical microstructural characterization of semiconductors  (Materials Research Society proceedings, vol. 588). Pittsburgh, Pa.: Materials Research Society.

Hassan, K. M., Sharma, A. K., Narayan, J., Muth, J. F., Teng, C. W., & Kolbas, R. M. (1998). Germanium nanostructures fabricated by pulsed laser deposition. Microcrystalline and nanocrystalline semiconductors--1998: symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.