John M. Glasko

Kvit, A., Yankov, R. A., Duscher, G., Rozgonyi, G., & Glasko, J. M. (2003). Formation of nanoscale voids and related metallic impurity gettering in high-energy ion-implanted and annealed epitaxial silicon. APPLIED PHYSICS LETTERS, 83(7), 1367–1369. https://doi.org/10.1063/1.1601678

Rozgonyi, G. A., Glasko, J. M., Beaman, K. L., & Koveshnikov, S. V. (2000, March 15). Gettering issues using MeV ion implantation. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 72, pp. 87–92. https://doi.org/10.1016/s0921-5107(99)00506-1