@article{long_varadaraajan_matthews_schetzina_2002, title={UV detectors and focal plane array imagers based on AlGaN p-i-n photodiodes}, volume={10}, number={4}, journal={Opto-electronics Review}, author={Long, J. P. and Varadaraajan, S. and Matthews, J. and Schetzina, J. F.}, year={2002}, pages={251–260} }
 @article{gremaud_matthews_2001, title={On the computation of steady hopper flows I. Stress determination for Coulomb materials}, volume={166}, ISSN={["1090-2716"]}, DOI={10.1006/jcph.2000.6641}, abstractNote={Abstract The problem of determining the steady state flow of granular materials in silos under the action of gravity is considered. In the case of Mohr–Coulomb materials, the stress equations correspond to a system of hyperbolic conservation laws with source terms and boundary conditions. A higher order discontinuous Galerkin method is proposed and implemented for the numerical resolution of those equations. The efficiency of the approach is illustrated by the computation of the stress fields induced in silos with sharp changes of the wall angle.}, number={1}, journal={JOURNAL OF COMPUTATIONAL PHYSICS}, author={Gremaud, PA and Matthews, JV}, year={2001}, month={Jan}, pages={63–83} }
 @article{brown_li_srinivasan_matthews_schetzina_2000, title={Solar-blind AlGaN heterostructure photodiodes}, volume={5}, DOI={10.1557/s1092578300000090}, abstractNote={A backside-illuminated solar-blind UV detector based on an AlGaN p-i-n heterostructure has been successfully synthesized, fabricated and tested. The p-i-n photodiode structure consists of a 1.0 μm n-type Al0.64Ga0.36N:Si layer grown by MOVPE onto a low temperature AlN buffer layer on a polished sapphire substrate. On top of this base layer is a 0.2 μm undoped Al0.47Ga0.53N active layer and a 0.5 μm p-type Al0.47Ga0.53N:Mg top layer. Square mesas of area A = 4 × 10−4 cm2 were obtained by reactive ion etching using BCl3. The solar-blind photodiode exhibits a very narrow UV spectral responsivity band peaked at 273 nm with a FWHM = 21 nm. Maximum responsivity R = 0.051 A/W at 273 nm, corresponding to an internal quantum efficiency of 27%. R0A values up to 8 × 107Ω-cm2 were obtained, corresponding to D* = 3.5 × 1012 cm Hz1/2W−1 at 273 nm.}, number={9}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Brown, J. D. and Li, J. Z. and Srinivasan, P. and Matthews, J. and Schetzina, J. F.}, year={2000}, pages={1–7} }
 @article{brown_boney_matthews_srinivasan_schetzina_nohava_yang_krishnankutty_2000, title={UV-specific (320-365 nm) digital camera based on a 128x128 focal plane array of GaN/AlGaN p-i-n photodiodes}, volume={5}, DOI={10.1557/s1092578300000065}, abstractNote={An ultraviolet-specific (320-365 nm) digital camera based on a 128×128 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully developed. The diode structure consists of a base n-type layer of AlGaN (~23% Al) followed by undoped and then p-type GaN layers deposited by metal organic vapor phase epitaxy. Double-side polished sapphire wafers serve as transparent substrates. Standard photolithographic, etching, and metallization procedures were employed to fabricate the devices. The fully-processed photodiode array was hybridized to a silicon readout integrated circuit (ROIC) using In bump bonds for electrical contact. The UV camera was operated at room temperature at frame rates ranging from 15 to 240 Hz. A variety of UV scenes were successfully recorded with this configuration.}, number={6}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Brown, J. D. and Boney, J. and Matthews, J. and Srinivasan, P. and Schetzina, J. F. and Nohava, T. and Yang, W. and Krishnankutty, S.}, year={2000}, pages={1–12} }
 @article{brown_yu_matthews_harney_boney_schetzina_benson_dang_terrill_nohava_et al._1999, title={Visible-blind UV digital camera based on a 32 x 32 array of GaN/AlGaN p-i-n photodiodes}, volume={4}, DOI={10.1557/s109257830000065x}, abstractNote={A visible-blind UV camera based on a 32 × 32 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully demonstrated. Each of the 1024 photodiodes in the array consists of a base n-type layer of AlGaN (~20%) onto which an undoped GaN layer followed by a p-type GaN layer is deposited by metallorganic vapor phase epitaxy. Double-side polished sapphire wafers are used as transparent substrates. Standard photolithographic, etching, and metallization procedures were employed to obtain fully-processed devices. The photodiode array was hybridized to a silicon readout integrated circuit using In bump bonds. Output from the UV camera was recorded at room temperature at a frame rate of 30 Hz. This new type of visible-blind digital camera is sensitive to radiation from 320 nm to 365 nm in the UV spectral region.}, number={9}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Brown, J. D. and Yu, Z. H. and Matthews, J. and Harney, S. and Boney, J. and Schetzina, J. F. and Benson, J. D. and Dang, K. W. and Terrill, C. and Nohava, T. and et al.}, year={1999}, pages={1–10} }