Works (11)

Updated: July 5th, 2023 16:02

2007 journal article

Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures

APPLIED PHYSICS LETTERS, 90(15).

By: P. Barletta n, E. Berkman n, B. Moody n, N. El-Masry n, A. Emara n, M. Reed n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2005 journal article

Effect of doping on the magnetic properties of GaMnN: Fermi level engineering

APPLIED PHYSICS LETTERS, 86(10).

By: M. Reed n, F. Arkun n, E. Berkman n, N. Elmasry n, J. Zavada*, M. Luen n, M. Reed n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2004 journal article

Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN : Mg interface

APPLIED PHYSICS LETTERS, 85(17), 3809–3811.

By: F. Arkun n, M. Reed n, E. Berkman n, N. El-Masry n, J. Zavada*, M. Reed n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2004 article

Electrical characterization of B-10 doped diamond irradiated with low thermal neutron fluence

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 1191–1194.

By: M. Reed n, M. Reed n, K. Jagannadham n, K. Verghese n, S. Bedair n, N. El-Masry n, J. Butler*

co-author countries: United States of America 🇺🇸

Contributors: M. Reed n, M. Reed n, K. Jagannadham n, K. Verghese n, S. Bedair n, N. El-Masry n, J. Butler*

Sources: Web Of Science, ORCID
Added: August 6, 2018

2002 personal communication

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13)

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1).

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Room temperature ferromagnetic properties of (Ga, Mn)N

APPLIED PHYSICS LETTERS, 79(21), 3473–3475.

By: M. Reed n, N. El-Masry n, H. Stadelmaier n, M. Ritums n, M. Reed n, C. Parker n, J. Roberts n, S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

MATERIALS LETTERS, 51(6), 500–503.

By: M. Reed n, M. Ritums n, H. Stadelmaier n, M. Reed n, C. Parker n, S. Bedair n, N. El-Masry n

co-author countries: United States of America 🇺🇸
author keywords: magnetic; semiconductors; Ga-Mn-N
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Critical layer thickness determination of GaN/InGaN/GaN double heterostructures

Applied Physics Letters, 77(25), 4121–4123.

By: M. Reed n, N. El-Masry n, C. Parker n, J. Roberts n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation

APPLIED PHYSICS LETTERS, 76(14), 1935–1937.

By: M. Hunter n, M. Reed n, N. El-Masry n, J. Roberts n & S. Bedair n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Determination of the critical layer thickness in the InGaN/GaN heterostructures

APPLIED PHYSICS LETTERS, 75(18), 2776–2778.

By: C. Parker n, J. Roberts n, S. Bedair n, M. Reed n, S. Liu n & N. El-Masry n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN

Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. APPLIED PHYSICS LETTERS, 75(17), 2566–2568.

By: C. Parker n, J. Roberts n, S. Bedair n, M. Reed n, S. Liu n, N. El-Masry n, L. Robins*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

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