@article{barletta_berkman_moody_el-masry_emara_reed_bedair_2007, title={Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures}, volume={90}, DOI={10.1063/1.2721133}, number={15}, journal={Applied Physics Letters}, author={Barletta, P. T. and Berkman, E. A. and Moody, B. F. and El-Masry, N. A. and Emara, A. M. and Reed, M. J. and Bedair, S. M.}, year={2007} }
 @article{reed_arkun_berkman_elmasry_zavada_luen_reed_bedair_2005, title={Effect of doping on the magnetic properties of GaMnN: Fermi level engineering}, volume={86}, DOI={10.1063/1.1881786}, number={10}, journal={Applied Physics Letters}, author={Reed, M. J. and Arkun, F. E. and Berkman, E. A. and Elmasry, N. A. and Zavada, J. and Luen, M. O. and Reed, M. L. and Bedair, S. M.}, year={2005} }
 @article{arkun_reed_berkman_el-masry_zavada_reed_bedair_2004, title={Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN: Mg interface}, volume={85}, DOI={10.1063/1.1810216}, number={17}, journal={Applied Physics Letters}, author={Arkun, F. E. and Reed, M. J. and Berkman, E. A. and El-Masry, N. A. and Zavada, J. M. and Reed, M. L. and Bedair, S. M.}, year={2004}, pages={3809–3811} }
 @article{reed_reed_jagannadham_verghese_bedair_el-masry_butler_2004, title={Electrical characterization of B-10 doped diamond irradiated with low thermal neutron fluence}, volume={22}, DOI={10.1116/1.1763910}, number={4}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Reed, M. L. and Reed, M. J. and Jagannadham, K. and Verghese, K. and Bedair, S. M. and El-Masry, N. and Butler, J. E.}, year={2004}, pages={1191–1194} }
 @misc{roberts_parker_muth_leboeuf_aumer_bedair_reed_2002, title={Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13)}, volume={31}, number={1}, journal={Journal of Electronic Materials}, author={Roberts, J. C. and Parker, C. A. and Muth, J. F. and Leboeuf, S. F. and Aumer, M. E. and Bedair, S. M. and Reed, M. J.}, year={2002}, month={Jan}, pages={L1–6} }
 @article{reed_el-masry_stadelmaier_ritums_reed_parker_roberts_bedair_2001, title={Room temperature ferromagnetic properties of (Ga, Mn)N}, volume={79}, DOI={10.1063/1.1419231}, number={21}, journal={Applied Physics Letters}, author={Reed, M. L. and El-Masry, N. A. and Stadelmaier, H. H. and Ritums, M. K. and Reed, M. J. and Parker, C. A. and Roberts, J. C. and Bedair, S. M.}, year={2001}, pages={3473–3475} }
 @article{reed_ritums_stadelmaier_reed_parker_bedair_el-masry_2001, title={Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices}, volume={51}, DOI={10.1016/S0167-577X(01)00342-1}, number={6}, journal={Materials Letters}, author={Reed, M. L. and Ritums, M. K. and Stadelmaier, H. H. and Reed, M. J. and Parker, C. A. and Bedair, S. M. and El-Masry, N. A.}, year={2001}, pages={500–503} }
 @article{reed_el-masry_parker_roberts_bedair_2000, title={Critical layer thickness determination of GaN/InGaN/GaN double heterostructures}, volume={77}, DOI={10.1063/1.1334361}, number={25}, journal={Applied Physics Letters}, author={Reed, M. J. and El-Masry, N. A. and Parker, C. A. and Roberts, J. C. and Bedair, S. M.}, year={2000}, pages={4121–4123} }
 @article{hunter_reed_el-masry_roberts_bedair_2000, title={Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation}, volume={76}, DOI={10.1063/1.126217}, number={14}, journal={Applied Physics Letters}, author={Hunter, M. E. and Reed, M. J. and El-Masry, N. A. and Roberts, J. C. and Bedair, S. M.}, year={2000}, pages={1935–1937} }
 @article{parker_roberts_bedair_reed_liu_el-masry_1999, title={Determination of the critical layer thickness in the InGaN/GaN heterostructures}, volume={75}, DOI={10.1063/1.125146}, number={18}, journal={Applied Physics Letters}, author={Parker, C. A. and Roberts, J. C. and Bedair, S. M. and Reed, M. J. and Liu, S. X. and El-Masry, N. A.}, year={1999}, pages={2776–2778} }
 @article{parker_roberts_bedair_reed_liu_el-masry_robins_1999, title={Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN}, volume={75}, DOI={10.1063/1.125079}, number={17}, journal={Applied Physics Letters}, author={Parker, C. A. and Roberts, J. C. and Bedair, S. M. and Reed, M. J. and Liu, S. X. and El-Masry, N. A. and Robins, L. H.}, year={1999}, pages={2566–2568} }