Mason J. Reed

Barletta, P. T., Berkman, E. A., Moody, B. F., El-Masry, N. A., Emara, A. M., Reed, M. J., & Bedair, S. M. (2007). Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures. APPLIED PHYSICS LETTERS, 90(15). https://doi.org/10.1063/1.2721133

Reed, M. J., Arkun, F. E., Berkman, E. A., Elmasry, N. A., Zavada, J., Luen, M. O., … Bedair, S. M. (2005). Effect of doping on the magnetic properties of GaMnN: Fermi level engineering. APPLIED PHYSICS LETTERS, 86(10). https://doi.org/10.1063/1.1881786

Arkun, F. E., Reed, M. J., Berkman, E. A., El-Masry, N. A., Zavada, J. M., Reed, M. L., & Bedair, S. M. (2004). Dependence of ferromagnetic properties on carrier transfer at GaMnN/GaN : Mg interface. APPLIED PHYSICS LETTERS, 85(17), 3809–3811. https://doi.org/10.1063/1.1810216

Reed, M. L., Reed, M. J., Jagannadham, K., Verghese, K., Bedair, S. M., El-Masry, N., & Butler, J. E. (2004). Electrical characterization of B-10 doped diamond irradiated with low thermal neutron fluence. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 1191–1194. https://doi.org/10.1116/1.1763910

Roberts, J. C., Parker, C. A., Muth, J. F., Leboeuf, S. F., Aumer, M. E., Bedair, S. M., & Reed, M. J. (2002, January 1). Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1-xN (0 <= x <= 0.13).

Reed, M. L., El-Masry, N. A., Stadelmaier, H. H., Ritums, M. K., Reed, M. J., Parker, C. A., … Bedair, S. M. (2001). Room temperature ferromagnetic properties of (Ga, Mn)N. APPLIED PHYSICS LETTERS, 79(21), 3473–3475. https://doi.org/10.1063/1.1419231

Reed, M. L., Ritums, M. K., Stadelmaier, H. H., Reed, M. J., Parker, C. A., Bedair, S. M., & El-Masry, N. A. (2001). Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices. MATERIALS LETTERS, 51(6), 500–503. https://doi.org/10.1016/S0167-577X(01)00342-1

Reed, M. J., El-Masry, N. A., Parker, C. A., Roberts, J. C., & Bedair, S. M. (2000). Critical layer thickness determination of GaN/InGaN/GaN double heterostructures. Applied Physics Letters, 77(25), 4121–4123. https://doi.org/10.1063/1.1334361

Hunter, M. E., Reed, M. J., El-Masry, N. A., Roberts, J. C., & Bedair, S. M. (2000). Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation. APPLIED PHYSICS LETTERS, 76(14), 1935–1937. https://doi.org/10.1063/1.126217

Parker, C. A., Roberts, J. C., Bedair, S. M., Reed, M. J., Liu, S. X., & El-Masry, N. A. (1999). Determination of the critical layer thickness in the InGaN/GaN heterostructures. APPLIED PHYSICS LETTERS, 75(18), 2776–2778. https://doi.org/10.1063/1.125146

Parker, C. A., Roberts, J. C., Bedair, S. M., Reed, M. J., Liu, S. X., El-Masry, N. A., & Robins, L. H. (1999). Optical band gap dependence on composition and thickness of InxGa1-xN (0 < x < 0.25) grown on GaN. APPLIED PHYSICS LETTERS, 75(17), 2566–2568. https://doi.org/10.1063/1.125079