@article{lee_mittal_barnette_kafle_park_shin_johnson_park_kim_2013, title={Cellulose polymorphism study with sum-frequency-generation (SFG) vibration spectroscopy: identification of exocyclic CH2OH conformation and chain orientation}, volume={20}, number={3}, journal={Cellulose}, author={Lee, C. M. and Mittal, A. and Barnette, A. L. and Kafle, K. and Park, Y. B. and Shin, H. and Johnson, D. K. and Park, S. and Kim, S. H.}, year={2013}, pages={991–1000} }
 @article{kim_park_shen_lee_kingon_yoon_kim_2008, title={Thickness dependence of submicron thick Pb(Zr0.3Ti0.7)O-3 films on piezoelectric properties}, volume={34}, ISSN={["0272-8842"]}, DOI={10.1016/j.ceramint.2007.07.016}, abstractNote={The effects of thickness on the piezoelectric and electric properties of tetragonal composition, polycrystalline, (1 1 1)-textured Pb(Zr0.3Ti0.7)O3 films are investigated. The effective piezoelectric coefficient d33 is characterized by a double-beam laser interferometer and is measured to increase with film thickness although extrinsic contribution such as 90° domain wall motion is negligible from the nonlinearity of piezoelectric coefficient. Constituent parameters to affect piezoelectric coefficient such as polarization and dielectric properties were analyzed based on the semiempirical phenomenological equation. The effectiveness of poling was also evaluated as a function of film thickness. These results present that the increase of effective d33 in these tetragonal PZT films can be mainly due to enhanced intrinsic contributions.}, number={8}, journal={CERAMICS INTERNATIONAL}, author={Kim, Dong-Joo and Park, Jung-Hyun and Shen, Dongna and Lee, Joo Won and Kingon, Angus I. and Yoon, Young Soo and Kim, Seung-Hyun}, year={2008}, month={Dec}, pages={1909–1915} }
 @article{seo_kim_chung_kim_kim_jeon_2005, title={Characterization of remote inductively coupled CH4-N-2 plasma for carbon nitride thin-film deposition}, volume={98}, number={4}, journal={Journal of Applied Physics}, author={Seo, H. and Kim, J. H. and Chung, K. H. and Kim, J. Y. and Kim, S. H. and Jeon, H.}, year={2005} }
 @article{kim_seo_kremer_kohler_villesuzanne_whangbo_2005, title={Large negative magnetoresistance of the rare-earth transition-metal intermetallic compound PrMnSi2}, volume={17}, ISSN={["0897-4756"]}, DOI={10.1021/cm051669d}, abstractNote={The rare-earth intermetallic compound PrMnSi2 consists of two magnetic sublattices, i.e., layers of Mn atoms and layers of Pr atoms, which repeat in the (−Mn−Pr−Pr−)∞ sequence. Electrical resistivity measurements were carried out for PrMnSi2 between 2 and 350 K under various magnetic fields. PrMnSi2 is a metal with two metal-to-metal transitions at ∼20 and ∼50 K, and its resistivity vs temperature curves show a significant hysteresis in the absence and presence of an external magnetic field. The resistivity is reduced by an external magnetic field, and this negative magnetoresistance reaches up to 47% at 9 T around 17 K where PrMnSi2 is antiferromagnetic at zero field. The magnetoresistance vs temperature curves of PrMnSi2 reveal three peaks at fields up to ∼3 T, which correspond to the three magnetic phase transitions of PrMnSi2 observed from magnetic susceptibility and heat capacity measurements. The negative magnetoresistance and the resistivity hysteresis of PrMnSi2 were accounted for by considering h...}, number={25}, journal={CHEMISTRY OF MATERIALS}, author={Kim, SH and Seo, DK and Kremer, RK and Kohler, M and Villesuzanne, A and Whangbo, MH}, year={2005}, month={Dec}, pages={6338–6341} }
 @article{kim_ha_hwang_kingon_2001, title={Ca- and Sr-doped (Pb1-xLax)(ZryTi1-y)(1-x/4)O-3 thin films for low-voltage operation}, volume={394}, number={1-2}, journal={Thin Solid Films}, author={Kim, S. H. and Ha, J. and Hwang, C. S. and Kingon, A. I.}, year={2001}, pages={131–135} }
 @article{yoon_wicaksana_kim_kim_kingon_2001, title={Effect of hydrogen on true leakage current characteristics of (Pb,La)(Zr,Ti)O-3 thin-film capacitors with Pt- or Ir-based top electrodes}, volume={16}, ISSN={["2044-5326"]}, DOI={10.1557/JMR.2001.0163}, abstractNote={The degradation behavior of polarization and leakage current characteristics of sol-gel-derived (Pb,La)(Zr,Ti)O3 (PLZT) thin films, with Pt, Ir, and IrO2 top electrodes, by annealing under a 4% H2/96% N2 atmosphere were investigated. The leakage current behaviors of Pt/PLZT/Pt and IrO2/PLZT/Pt capacitors annealed at 300 °C for 20 min in 4% H2 were well consistent with the space-charge-influenced injection model proposed. However, IrO2/PLZT/Pt capacitors recovered at 700 °C for 10 min in Ar ambient after hydrogen anneal were not consistent with the proposed model because a conducting phase of IrPb was formed between the top electrode and PLZT during the recovery anneal at 700 °C in Ar ambient and modified the Schottky barrier height. The true leakage current behavior of IrO2/PLZT/Pt capacitors recovered after hydrogen forming are similar to those of Ir/PLZT/Pt capacitors without the hydrogen-forming gas anneal. The P–E loops of Pt/PLZT/Pt and Ir/PLZT/Pt capacitors showed good recovery through recovery anneal after H2 treatment. However, IrO2/PLZT/Pt capacitors depended on the recovery anneal atmosphere (Ar or O2).}, number={4}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Yoon, SG and Wicaksana, D and Kim, DJ and Kim, SH and Kingon, AI}, year={2001}, month={Apr}, pages={1185–1189} }
 @article{yoon_kingon_kim_2001, title={Electrical properties of Pb1-xLax(ZryTi1-y)(1-x/4)O-3 thin films with various iridium-based top electrodes}, volume={33}, number={1-4}, journal={Integrated Ferroelectrics}, author={Yoon, S. G. and Kingon, A. I. and Kim, S. H.}, year={2001}, pages={155–164} }
 @article{maria_cheek_streiffer_kim_dunn_kingon_2001, title={Lead zirconate titanate thin films on base-metal foils: an approach for embedded high-permittivity passive components}, volume={84}, DOI={10.1111/j.1151-2916.2001.tb01029.x}, abstractNote={An approach for embedding high‐permittivity dielectric thin films into glass epoxy laminate packages has been developed. Lead lanthanum zirconate titanate (Pb0.85La0.15(Zr0.52Ti0.48)0.96O3, PLZT) thin films were prepared using chemical solution deposition on nickel‐coated copper foils that were 50 μm thick. Sputter‐deposited nickel top electrodes completed the all‐base‐metal capacitor stack. After high‐temperature nitrogen‐gas crystallization anneals, the PLZT composition showed no signs of reduction, whereas the base‐metal foils remained flexible. The capacitance density was 300–400 nF/cm2, and the loss tangent was 0.01–0.02 over a frequency range of 1–1000 kHz. These properties represent a potential improvement of 2–3 orders of magnitude over currently available embedded capacitor technologies for polymeric packages.}, number={10}, journal={Journal of the American Ceramic Society}, author={Maria, J.-P. and Cheek, K. and Streiffer, S. and Kim, S. H. and Dunn, G. and Kingon, A.}, year={2001}, pages={2436–2438} }
 @article{kim_park_woo_lee_ha_hwang_jeong_kingon_2001, title={The low-voltage-switching behavior of sol-gel-derived Pb(Zr,Ti)O-3 thin film capacitors}, volume={39}, number={1-4}, journal={Integrated Ferroelectrics}, author={Kim, S. H. and Park, D. Y. and Woo, H. J. and Lee, D. S. and Ha, J. W. and Hwang, C. S. and Jeong, S. and Kingon, A. I.}, year={2001}, pages={963–972} }
 @article{kim_woo_ha_hwang_kim_kingon_2001, title={Thickness effects on imprint in chemical-solution-derived (Pb, La)(Zr, Ti)O-3 thin films}, volume={78}, ISSN={["1077-3118"]}, DOI={10.1063/1.1370989}, abstractNote={The film thickness-dependent imprinting behavior (voltage shift) of (Pb, La)(Zr, Ti)O3 capacitors was evaluated by a thermal stress process under a remanence bias. The remanent polarization (Pr) was found to be almost independent of the film thickness whereas in the 50–300 nm range the relative dielectric constant (εr) increased linearly with the square root of the film thickness. It was found that the voltage shift, which was attributed to the accumulation of charged defects near the electrode interface, also increased linearly with increasing film thickness. In addition, the charge accumulated thickness varied with the square root of the film thickness. This was established from a simple assumption that the level of charge accumulation is determined by the product of the total amount of charged defects (total film thickness×charged defect density) and the internal field that is generated by the Pr. Therefore, the imprint is much more a bulk-related degradation phenomenon compared to the fatigue.}, number={19}, journal={APPLIED PHYSICS LETTERS}, author={Kim, SH and Woo, HJ and Ha, J and Hwang, CS and Kim, HR and Kingon, AI}, year={2001}, month={May}, pages={2885–2887} }
 @article{kim_kim_maria_kingon_streiffer_im_auciello_krauss_2000, title={Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9 thin film properties}, volume={76}, ISSN={["1077-3118"]}, DOI={10.1063/1.125799}, abstractNote={The properties of SrBi2Ta2O9 (SBT) films, such as remanent polarization and leakage current density, are closely related to the film/electrode interface and surface roughness of the underlying electrode. SBT films grown on stable Pt/TiO2/SiO2/Si and Pt/ZrO2/SiO2/Si substrates exhibit high remanent polarization, low leakage current density, and low voltage saturation as compared to SBT films synthesized on Pt/Ti/SiO2/Si. It is shown that severe diffusion of Ti from the Ti interlayer onto the surface of the Pt bottom electrode and the increased surface roughness of this electrode stack play key roles in degradation of SBT properties.}, number={4}, journal={APPLIED PHYSICS LETTERS}, author={Kim, SH and Kim, DJ and Maria, JP and Kingon, AI and Streiffer, SK and Im, J and Auciello, O and Krauss, AR}, year={2000}, month={Jan}, pages={496–498} }
 @article{choi_kim_yoo_aspnes_woo_kim_2000, title={Optical properties of AlxGa1-xP (0 <= x <= 0.52) alloys}, volume={87}, ISSN={["0021-8979"]}, DOI={10.1063/1.372011}, abstractNote={We report optical properties of AlxGa1−xP (0⩽x⩽0.52) alloys grown by gas source molecular-beam epitaxy on S-doped GaP(001) substrates. Room-temperature pseudodielectric function spectra from 1.5 to 6.0 eV were obtained by spectroscopic ellipsometry. By applying the parabolic-band critical point model to numerically calculated second energy derivatives of these spectra, we obtained accurate room-temperature values of the E1, E0′, E2, and E2′ critical point energies and their dependence on composition x.}, number={3}, journal={JOURNAL OF APPLIED PHYSICS}, author={Choi, SG and Kim, YD and Yoo, SD and Aspnes, DE and Woo, DH and Kim, SH}, year={2000}, month={Feb}, pages={1287–1290} }
 @article{yoon_kingon_kim_2000, title={Relaxation and leakage current characteristics of Pb1-xLax(ZryTi1-y)(1-x/4)O3 thin films with various Ir-based top electrodes}, volume={88}, ISSN={["1089-7550"]}, DOI={10.1063/1.1325382}, abstractNote={The dielectric relaxation and leakage current characteristics were studied for Pb1−xLax(ZryTi1−y)1−x/4O3 (PLZT) capacitors with various iridium-based top electrodes. The dielectric relaxation current behavior of PLZT capacitors obeys the well-known Curie–von Schweidler law independent of various Ir-based top electrodes including Pt and shows surprisingly little impact of various atmospheres such as Ar, O2, and H2. Electrical charge hopping, bulk effect, is the dominant mechanism of ac electric conduction which exhibits a linear relationship with frequency at room temperature. The true leakage current was separated definitively from the dielectric relaxation contributions. The PLZT capacitors with Pt or IrO2 top electrodes contacted with PLZT films show strong time dependence of true leakage current, resulting in consistence with space-charge influenced injection model. On the other hand, true leakage current of capacitors with Ir or IrO2/Ir top electrodes is independent of time, resulting in contradiction to the space-charge injection model. The IrPb, conducting phase, at interface between Ir top electrode and PLZT induces a steady state current behavior without the contribution of relaxation current. The second phase formed at interface modified the Schottky barrier height and increases the leakage current density.}, number={11}, journal={JOURNAL OF APPLIED PHYSICS}, author={Yoon, SG and Kingon, AI and Kim, SH}, year={2000}, month={Dec}, pages={6690–6695} }
 @article{christman_kim_maiwa_maria_rodriguez_kingon_nemanich_2000, title={Spatial variation of ferroelectric properties in Pb(Zr-0.3, Ti-0.7)O-3 thin films studied by atomic force microscopy}, volume={87}, ISSN={["0021-8979"]}, DOI={10.1063/1.373492}, abstractNote={Imaging of the phase and magnitude of the piezoelectric strain in Pb(Zr0.3, Ti0.7)O3 (PZT) capacitors is performed with an atomic force microscope. The imaging reveals a significant spatial dependence of the ferroelectric properties of both fatigued and unfatigued PZT films. We propose that the variation is related to the domain structure of the PZT. Through the measurement of local piezoelectric hysteresis loops and imaging of the piezoelectric strain, areas are observed in fatigued PZT that exhibit hysteresis loops shifted along the polarization axis. In some regions of fatigued samples, the hysteresis loops are shifted such that both remanent points of the hysteresis curve have the same polarization direction. These results have important implications for the scalability of nonvolatile ferroelectric random access memory to higher device densities.}, number={11}, journal={JOURNAL OF APPLIED PHYSICS}, author={Christman, JA and Kim, SH and Maiwa, H and Maria, JP and Rodriguez, BJ and Kingon, AI and Nemanich, RJ}, year={2000}, month={Jun}, pages={8031–8034} }
 @article{kim_lee_hwang_kim_kingon_2000, title={Thermally induced voltage offsets in Pb(Zr,Ti)O-3 thin films}, volume={77}, ISSN={["1077-3118"]}, DOI={10.1063/1.1324001}, abstractNote={Voltage offset in the polarization-voltage characteristics of Pb(Zr,Ti)O3 (PZT) capacitors was evaluated by a thermal stress process. A thermally induced voltage shift occurs when heating the sample under either remanence or a saturating bias. It was found that the voltage shifts can, to a large extent, be attributed to the role of charged defects and the defect-dipole alignment throughout the films. PZT film with a high Zr/Ti ratio, i.e., rhombohedral compositions exhibited the best imprint resistance. When these films were doped wit up to 6% La, the imprint resistance was further improved. It was also found that B-site donors were more effective in minimizing the voltage shift than A-site donors. However, dopants with the same charge value as Pb, for example, Ca and Sr, did not affect the thermally induced voltage shifts of the films since they could not reduce the charged defects in the films.}, number={19}, journal={APPLIED PHYSICS LETTERS}, author={Kim, SH and Lee, DS and Hwang, CS and Kim, DJ and Kingon, AI}, year={2000}, month={Nov}, pages={3036–3038} }
 @article{kim_kim_lee_park_kingon_nemanich_im_streiffer_1999, title={An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique}, volume={14}, ISSN={["0884-2914"]}, DOI={10.1557/JMR.1999.0594}, abstractNote={Ferroelectric SrBi2Ta2O9 (SBT) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 1010 switching cycles, indicating favorable behavior for memory applications.}, number={11}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Kim, SH and Kim, DJ and Lee, KM and Park, M and Kingon, AI and Nemanich, RJ and Im, J and Streiffer, SK}, year={1999}, month={Nov}, pages={4395–4401} }
 @article{kim_kim_im_kim_kingon_1999, title={Ferroelectric properties of new chemical solution derived SBT thin films for non-volatile memory devices}, volume={16}, ISSN={["1573-4846"]}, DOI={10.1023/A:1008748718231}, number={1-2}, journal={JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY}, author={Kim, SH and Kim, DJ and Im, J and Kim, CE and Kingon, AI}, year={1999}, month={Oct}, pages={57–63} }
 @article{kim_kim_im_streiffer_auciello_maria_kingon_1999, title={Impact of changes in the Pt heterostructure bottom electrodes on the ferroelectric properties of SBT thin films}, volume={26}, DOI={10.1080/10584589908215626}, abstractNote={Abstract The crystallinity and the microstructure of Sr0.8Bi2.3Ta2O9 (SBT) thin films improved with increasing annealing temperature, and strongly influenced the ferroelectric properties. In addition, the properties of SBT films, such as remanent polarization and leakage current density, are closely related to the film/electrode interface and surface roughness of the underlying electrode. SBT films on Pt/TiO2/SiO2/Si and Pt/ZrO2/SiO2/Si substrates exhibited high remanent polarization, low leakage current density, and low voltage saturation as compared to SBT films on Pt/Ti/SiO2/Si substrates. This is deduced to be related to differences in film orientation, electrode roughness, and out-diffusion of Ti onto the surface of the bottom electrode.}, number={1-4}, journal={Integrated Ferroelectrics}, author={Kim, S. H. and Kim, D. J. and Im, J. and Streiffer, S. K. and Auciello, O. and Maria, J. P. and Kingon, A. I.}, year={1999}, pages={955–970} }
 @article{kim_kim_maria_kingon_1999, title={Influences on imprint failure of SrBi2Ta2O9 thin film capacitors}, volume={25}, number={1-4}, journal={Integrated Ferroelectrics}, author={Kim, D. J. and Kim, S. H. and Maria, J. P. and Kingon, A. I.}, year={1999}, pages={691–701} }
 @article{maiwa_maria_christman_kim_streiffer_kingon_1999, title={Measurement and calculation of PZT thin film longitudinal piezoelectric coefficients}, volume={24}, ISSN={["1058-4587"]}, DOI={10.1080/10584589908215586}, abstractNote={The ferroelectric and piezoelectric properties of 2000 {angstrom} thick chemical solution deposited Pb(Zr{sub x}Ti{sub 1{minus}x})O{sub 3} (PZT) thin films were investigated. Several Zr/Ti ratios were studied: 30/70, 50/50 and 65/35, which correspond to tetragonal, near-morphotropic, and rhombohedral symmetries. In all samples, a {l_brace}111{r_brace}-texture is predominant. Longitudinal piezoelectric coefficients and their dc field dependence were measured using the contact AFM method. The expected trend of a maximum piezoelectric coefficient at or near to the MPB was not observed. The composition dependence was small, with the maximum d{sub 33} occurring in the tetragonal material. To explain the results, crystallographic texture and film thickness effects are suggested. Using a modified phenomenological approach, derived electrostrictive coefficients, and experimental data, d{sub 33} values were calculated. Qualitative agreement was observed between the measured and calculated coefficients. Justifications of modifications to the calculations are discussed.}, number={1-4}, journal={INTEGRATED FERROELECTRICS}, author={Maiwa, H and Maria, JP and Christman, JA and Kim, SH and Streiffer, K and Kingon, AI}, year={1999}, pages={139–146} }
 @article{maiwa_christman_kim_kim_maria_chen_streiffer_kingon_1999, title={Measurement of piezoelectric displacements of Pb(Zr, Ti)O-3 thin films using a double-beam interferometer}, volume={38}, ISSN={["0021-4922"]}, DOI={10.1143/jjap.38.5402}, abstractNote={ 
  The double-beam interferometric method is applied to measure the field-induced  
  displacement of Pb(Zr, Ti)O3 thin films. The dc electric field dependence of the  
  longitudinal piezoelectric coefficient (d
                  33) response of Pb(Zr, Ti)O3 thin films deposited  
  by metal organic chemical vapor deposition (MOCVD) was measured. Experimental d
                  33  
  values were compared with coefficients calculated using a phenomenological approach  
  and bulk parameters. Qualitative agreement was obtained between measured and  
  calculated coefficients. 
  }, number={9B}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS}, author={Maiwa, H and Christman, JA and Kim, SH and Kim, DJ and Maria, JP and Chen, B and Streiffer, SK and Kingon, AI}, year={1999}, month={Sep}, pages={5402–5405} }