Works (9)
Updated: July 5th, 2023 16:02
2004 article
Effect of N-2 plasma on yttrium oxide and yttrium-oxynitride dielectrics
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 445–451.
Contributors: n, R. Ashcraft n, C. Hinkle n & G. Parsons n
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2003 article
Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 21, pp. 1792–1797.
Contributors: M. Ulrich n, J. Rowe n, n & G. Parsons n
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2003 journal article
Carbonate formation during post-deposition ambient exposure of high-k dielectrics
APPLIED PHYSICS LETTERS, 83(17), 3543–3545.
Contributors: T. Gougousi n, n, R. Ashcraft n & G. Parsons n
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2003 journal article
Chemical, physical, and electrical characterizations of oxygen plasma assisted chemical vapor deposited yttrium oxide on silicon
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(5), F102–F109.
Contributors: n, R. Ashcraft n, Z. Chen *, S. Stemmer * & G. Parsons n
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2002 journal article
Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon
APPLIED PHYSICS LETTERS, 81(4), 676–678.
Contributors: n, R. Ashcraft n, Z. Chen*, S. Stemmer * & G. Parsons n
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2002 journal article
Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications
JOURNAL OF APPLIED PHYSICS, 91(9), 6173–6180.
Contributors: n, R. Ashcraft n, M. Kelly n, J. Chambers *, T. Klein * & G. Parsons n
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2002 journal article
Reactions of Y2O3 films with (001) Si substrates and with polycrystalline Si capping layers
APPLIED PHYSICS LETTERS, 81(4), 712–714.
Contributors: S. Stemmer *, D. Klenov*, Z. Chen *, n, R. Ashcraft n & G. Parsons n
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
2002 journal article
Water absorption and interface reactivity of yttrium oxide gate dielectrics on silicon
APPLIED PHYSICS LETTERS, 80(19), 3575–3577.
Contributors: n, R. Ashcraft n & G. Parsons n
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation
(OpenAlex)
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
1999 journal article
Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)
APPLIED PHYSICS LETTERS, 75(25), 4001–4003.
Contributors: T. Klein n, n, W. Epling n, W. Li n, D. Maher n, C. Hobbs*, R. Hegde*, I. Baumvol*, G. Parsons n
Sources: Web Of Science, ORCID, NC State University Libraries
Added: August 6, 2018
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