Works (9)

Updated: July 5th, 2023 16:02

2004 article

Effect of N-2 plasma on yttrium oxide and yttrium-oxynitride dielectrics

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 445–451.

By: D. Niu n, R. Ashcraft n, C. Hinkle n & G. Parsons n

co-author countries: United States of America 🇺🇸

Contributors: D. Niu n, R. Ashcraft n, C. Hinkle n & G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 article

Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 21, pp. 1792–1797.

By: M. Ulrich n, J. Rowe n, D. Niu n & G. Parsons n

co-author countries: United States of America 🇺🇸

Contributors: M. Ulrich n, J. Rowe n, D. Niu n & G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Carbonate formation during post-deposition ambient exposure of high-k dielectrics

APPLIED PHYSICS LETTERS, 83(17), 3543–3545.

By: T. Gougousi n, D. Niu n, R. Ashcraft n & G. Parsons n

co-author countries: United States of America 🇺🇸

Contributors: T. Gougousi n, D. Niu n, R. Ashcraft n & G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Chemical, physical, and electrical characterizations of oxygen plasma assisted chemical vapor deposited yttrium oxide on silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(5), F102–F109.

co-author countries: United States of America 🇺🇸

Contributors: D. Niu n, R. Ashcraft n, Z. Chen*, S. Stemmer* & G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2002 journal article

Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon

APPLIED PHYSICS LETTERS, 81(4), 676–678.

By: D. Niu n, R. Ashcraft n, Z. Chen*, S. Stemmer* & G. Parsons n

co-author countries: United States of America 🇺🇸

Contributors: D. Niu n, R. Ashcraft n, Z. Chen*, S. Stemmer* & G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2002 journal article

Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications

JOURNAL OF APPLIED PHYSICS, 91(9), 6173–6180.

By: D. Niu n, R. Ashcraft n, M. Kelly n, J. Chambers*, T. Klein* & G. Parsons n

co-author countries: United States of America 🇺🇸

Contributors: D. Niu n, R. Ashcraft n, M. Kelly n, J. Chambers*, T. Klein* & G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2002 journal article

Reactions of Y2O3 films with (001) Si substrates and with polycrystalline Si capping layers

APPLIED PHYSICS LETTERS, 81(4), 712–714.

By: S. Stemmer*, D. Klenov*, Z. Chen*, D. Niu n, R. Ashcraft n & G. Parsons n

co-author countries: United States of America 🇺🇸

Contributors: S. Stemmer*, D. Klenov*, Z. Chen*, D. Niu n, R. Ashcraft n & G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

2002 journal article

Water absorption and interface reactivity of yttrium oxide gate dielectrics on silicon

APPLIED PHYSICS LETTERS, 80(19), 3575–3577.

By: D. Niu n, R. Ashcraft n & G. Parsons n

co-author countries: United States of America 🇺🇸

Contributors: D. Niu n, R. Ashcraft n & G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

1999 journal article

Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)

APPLIED PHYSICS LETTERS, 75(25), 4001–4003.

By: T. Klein n, D. Niu n, W. Epling n, W. Li n, D. Maher n, C. Hobbs*, R. Hegde*, I. Baumvol*, G. Parsons n

co-author countries: Brazil 🇧🇷 United States of America 🇺🇸

Contributors: T. Klein n, D. Niu n, W. Epling n, W. Li n, D. Maher n, C. Hobbs*, R. Hegde*, I. Baumvol*, G. Parsons n

Sources: Web Of Science, ORCID
Added: August 6, 2018

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