Dong Niu

Effect of N-2 plasma on yttrium oxide and yttrium-oxynitride dielectrics

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 445–451.

Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 21, pp. 1792–1797.

Carbonate formation during post-deposition ambient exposure of high-k dielectrics

APPLIED PHYSICS LETTERS, 83(17), 3543–3545.

Chemical, physical, and electrical characterizations of oxygen plasma assisted chemical vapor deposited yttrium oxide on silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(5), F102–F109.

Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon

APPLIED PHYSICS LETTERS, 81(4), 676–678.

Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications

JOURNAL OF APPLIED PHYSICS, 91(9), 6173–6180.

Reactions of Y2O3 films with (001) Si substrates and with polycrystalline Si capping layers

APPLIED PHYSICS LETTERS, 81(4), 712–714.

Water absorption and interface reactivity of yttrium oxide gate dielectrics on silicon

APPLIED PHYSICS LETTERS, 80(19), 3575–3577.

Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)

APPLIED PHYSICS LETTERS, 75(25), 4001–4003.