2004 article

Effect of N-2 plasma on yttrium oxide and yttrium-oxynitride dielectrics

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 22, pp. 445–451.

Source: Web Of Science
Added: August 6, 2018

2003 article

Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 21, pp. 1792–1797.

By: M. Ulrich, J. Rowe, D. Niu & G. Parsons

Source: Web Of Science
Added: August 6, 2018

2003 journal article

Carbonate formation during post-deposition ambient exposure of high-k dielectrics

APPLIED PHYSICS LETTERS, 83(17), 3543–3545.

Source: Web Of Science
Added: August 6, 2018

2003 journal article

Chemical, physical, and electrical characterizations of oxygen plasma assisted chemical vapor deposited yttrium oxide on silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 150(5), F102–F109.

By: D. Niu, R. Ashcraft, Z. Chen*, S. Stemmer* & G. Parsons

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon

APPLIED PHYSICS LETTERS, 81(4), 676–678.

By: D. Niu, R. Ashcraft, Z. Chen, S. Stemmer & G. Parsons

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Elementary reaction schemes for physical and chemical vapor deposition of transition metal oxides on silicon for high-k gate dielectric applications

JOURNAL OF APPLIED PHYSICS, 91(9), 6173–6180.

By: D. Niu, R. Ashcraft, M. Kelly, J. Chambers, T. Klein & G. Parsons

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Reactions of Y2O3 films with (001) Si substrates and with polycrystalline Si capping layers

APPLIED PHYSICS LETTERS, 81(4), 712–714.

By: S. Stemmer, D. Klenov, Z. Chen, D. Niu, R. Ashcraft & G. Parsons

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Water absorption and interface reactivity of yttrium oxide gate dielectrics on silicon

APPLIED PHYSICS LETTERS, 80(19), 3575–3577.

By: D. Niu, R. Ashcraft & G. Parsons

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)

APPLIED PHYSICS LETTERS, 75(25), 4001–4003.

By: T. Klein, D. Niu, W. Epling, W. Li, D. Maher, C. Hobbs, R. Hegde, I. Baumvol, G. Parsons

Source: Web Of Science
Added: August 6, 2018