Rainer Loesing

Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using Cs+, O-2(+), and CsC6- primary ion beams

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 20(2), 507–511.

Optimization of SIMS analysis conditions for ultra-shallow phosphorus and arsenic implants

In D. B. Williams & R. Shimizu (Eds.), Microbeam Analysis 2000: proceedings of the Second Conference of the International Union of Microbeam Analysis Societies held in Kailua-Kona, Hawaii, 9-14 July 2000 (Vol. 165, pp. 327–328). Bristol: Institute of Physics Publishing.

Secondary ion mass spectrometry depth profiling of ultrashallow phosphorous in silicon

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(1), 509–513.