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 @article{lee_wu_bae_hong_lucovsky_2003, title={Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress}, volume={47}, DOI={10.1016/S0038-1101(02)00257-5}, number={1}, journal={Solid-state Electronics}, author={Lee, Y. M. and Wu, Y. D. and Bae, C. and Hong, J. G. and Lucovsky, G.}, year={2003}, pages={71–76} }
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 @article{choi_fleetwood_massengill_schrimpf_galloway_shaneyfelt_meisenheimer_dodd_schwank_lee_et al._2002, title={Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation}, volume={38}, DOI={10.1049/el:20020119}, number={4}, journal={Electronics Letters}, author={Choi, B. K. and Fleetwood, D. M. and Massengill, L. W. and Schrimpf, R. D. and Galloway, K. F. and Shaneyfelt, M. R. and Meisenheimer, T. L. and Dodd, P. E. and Schwank, J. R. and Lee, Y. M. and et al.}, year={2002}, pages={157–158} }
 @article{massengill_choi_fleetwood_schrimpf_galloway_shaneyfelt_meisenheimer_dodd_schwank_lee_et al._2001, title={Heavy-ion-induced breakdown in ultra-thin gate oxides and high- k dielectrics}, volume={48}, DOI={10.1109/23.983149}, number={6}, journal={IEEE Transactions on Nuclear Science}, author={Massengill, L. W. and Choi, B. K. and Fleetwood, D. M. and Schrimpf, R. D. and Galloway, K. F. and Shaneyfelt, M. R. and Meisenheimer, T. L. and Dodd, P. E. and Schwank, J. R. and Lee, Y. M. and et al.}, year={2001}, pages={1904–1912} }
 @article{wu_lee_lucovsky_2000, title={1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process}, volume={21}, DOI={10.1109/55.823574}, number={3}, journal={IEEE Electron Device Letters}, author={Wu, Y. D. and Lee, Y. M. and Lucovsky, G.}, year={2000}, pages={116–118} }
 @article{brillson_young_white_schafer_niimi_lee_lucovsky_2000, title={Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces}, volume={18}, number={3}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Brillson, L. J. and Young, A. P. and White, B. D. and Schafer, J. and Niimi, H. and Lee, Y. M. and Lucovsky, G.}, year={2000}, pages={1737–1741} }
 @article{white_brillson_lee_fleetwood_schrimpf_pantelides_lee_lucovsky_2000, title={Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation}, volume={47}, DOI={10.1109/23.903765}, number={6}, journal={IEEE Transactions on Nuclear Science}, author={White, B. D. and Brillson, L. J. and Lee, S. C. and Fleetwood, D. M. and Schrimpf, R. D. and Pantelides, S. T. and Lee, Y. M. and Lucovsky, G.}, year={2000}, pages={2276–2280} }
 @article{wu_lucovsky_lee_2000, title={The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing}, volume={47}, DOI={10.1109/16.848278}, number={7}, journal={IEEE Transactions on Electron Devices}, author={Wu, Y. and Lucovsky, G. and Lee, Y. M.}, year={2000}, pages={1361–1369} }