Yi Mu Lee

Lee, Y. M., Wu, Y. D., & Lucovsky, G. (2004). Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress. MICROELECTRONICS RELIABILITY, 44(2), 207–212. https://doi.org/10.1016/j.microrel.2003.07.002

Lee, Y. M., Wu, Y. D., Bae, C., Hong, J. G., & Lucovsky, G. (2003). Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress. SOLID-STATE ELECTRONICS, 47(1), 71–76. https://doi.org/10.1016/S0038-1101(02)00257-5

Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Massengill, L. W., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2002, December). Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 49, pp. 3045–3050. https://doi.org/10.1109/TNS.2002.805389

Choi, B. K., Fleetwood, D. M., Massengill, L. W., Schrimpf, R. D., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2002). Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation. Electronics Letters, 38(4), 157–158. https://doi.org/10.1049/el:20020119

Massengill, L. W., Choi, B. K., Fleetwood, D. M., Schrimpf, R. D., Galloway, K. F., Shaneyfelt, M. R., … Lucovsky, G. (2001, December). Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 48, pp. 1904–1912. https://doi.org/10.1109/23.983149

Wu, Y. D., Lee, Y. M., & Lucovsky, G. (2000). 1.6 nm oxide equivalent gate dielectrics using nitride/oxide (N/O) composites prepared by RPECVD/oxidation process. IEEE ELECTRON DEVICE LETTERS, 21(3), 116–118. https://doi.org/10.1109/55.823574

Brillson, L. J., Young, A. P., White, B. D., Schafer, J., Niimi, H., Lee, Y. M., & Lucovsky, G. (2000). Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(3), 1737–1741.

White, B. D., Brillson, L. J., Lee, S. C., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T., … Lucovsky, G. (2000, December). Low energy electron-excited nanoscale luminescence: A tool to detect trap activation by ionizing radiation. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 47, pp. 2276–2280. https://doi.org/10.1109/23.903765

Wu, Y., Lucovsky, G., & Lee, Y. M. (2000). The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing. IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1361–1369. https://doi.org/10.1109/16.848278