2006 journal article

High speed metal-oxide-semiconductor capacitor-based silicon optical modulators

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 45(8B), 6603–6608.

By: L. Liao, D. Samara-Rubio, A. Liu, D. Rubin, U. Keil, T. Franck, D. Hodge, M. Paniccia

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks

IEEE ELECTRON DEVICE LETTERS, 21(4), 170–172.

By: Z. Wang n, C. Parker*, D. Hodge*, R. Croswell*, N. Yang*, V. Misra, . Hauser

author keywords: Fermi level; flatband voltage; interface; ON
Source: Web Of Science
Added: August 6, 2018

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