Dexter W. Hodge

Works (2)

Updated: July 5th, 2023 16:02

2006 journal article

High speed metal-oxide-semiconductor capacitor-based silicon optical modulators

Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes & Review Papers, 45(8B), 6603–6608.

By: L. Liao, D. Samara-Rubio, A. Liu, D. Rubin, U. Keil, T. Franck, D. Hodge, M. Paniccia

Source: NC State University Libraries
Added: August 6, 2018

2000 article

Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks

Wang, N. Z., Parker, C. G., Hodge, D. W., Croswell, R. T., Yang, N. N., Misra, V., & Hauser, J. R. (2000, April 1). IEEE Electron Device Letters.

By: N. Wang n, C. Parker n, D. Hodge n, R. Croswell n, N. Yang n, V. Misra  n, J. Hauser n

author keywords: Fermi level; flatband voltage; interface; ON
topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Integrated Circuits and Semiconductor Failure Analysis
Source: Web Of Science
Added: August 6, 2018

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